CSI: New Evidence - A Progress Report

Julian Nagele,Bertram Felgenhauer,A. Middeldorp

DOI: https://doi.org/10.1007/978-3-319-63046-5_24

2017-08-06

Abstract:

What problem does this paper attempt to address?

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Xiangyu Zeng,Ge Ye,Fazhi Yang,Qikai Ye,Liang Zhang,Boyang Ma,Yulu Liu,Mengwei Xie,Yan Liu,Xiaozhi Wang,Yue Hao,Genquan Han

DOI: https://doi.org/10.1039/d3nr04069k

IF: 6.7

2023-01-01

Nanoscale

Abstract:van der Waals (vdW) ferromagnetic heterojunctions, characterized by an ultraclean device interface and the absence of lattice matching, have emerged as indispensable and efficient building blocks for future spintronic devices. In this study, we present a seldom observed antisymmetric magnetoresistance (MR) behavior with three distinctive resistance states in a lateral van der Waals (vdW) structure comprising Fe3GeTe2 (FGT)/graphite/FGT. In contrast to traditional spin valves governed by the magnetization configurations of ferromagnetic electrodes (FEs), this distinct feature can be attributed to the interaction between FGT and the FGT/graphite interface, which is primarily influenced by the internal spin-momentum locking effect. Furthermore, modulation of the MR behavior is accomplished by employing the coupling between antiferromagnetic and ferromagnetic materials to adjust the coercive fields of two FEs subsequent to the in situ growth of an FGT oxide layer on FGT. This study elucidates the device physics and mechanism of property modulation in lateral spin valves and holds the potential for advancing the development of gate-tunable spintronic devices and next-generation integrated circuits.
Magnetic Anisotropy Control with Curie Temperature above 400 K in a van der Waals Ferromagnet for Spintronic Device

Zeya Li,Ming Tang,Junwei Huang,Feng Qin,Lingyi Ao,Zhiwei Shen,Caorong Zhang,Peng Chen,Xiangyu Bi,Caiyu Qiu,Zhipeng Yu,Kun Zhai,Toshiya Ideue,Lin Wang,Zhongyuan Liu,Yongjun Tian,Yoshihiro Iwasa,Hongtao Yuan

DOI: https://doi.org/10.1002/adma.202201209

IF: 29.4

2022-04-21

Advanced Materials

Abstract:The technological appeal of van der Waals ferromagnetic materials is the ability to control magnetism under external fields with desired thickness towards novel spintronic applications. For practically useful devices, ferromagnetism above room temperature or tunable magnetic anisotropy is highly demanded but remains challenging. To date, only a few layered materials exhibit unambiguous ferromagnetic ordering at room temperature via gating techniques or interface engineering. Here, it is demonstrated that the magnetic anisotropy control and dramatic modulation of Curie temperature (Tc) up to 400 K are realized in layered Fe5GeTe2 via the high‐pressure diamond‐anvil‐cell technique. Magnetic phases manifesting with in‐plane anisotropic, out‐of‐plane anisotropic and nearly‐isotropic magnetic states can be tuned in a controllable way, depicted by the phase diagram with a maximum Tc up to 360 K. Remarkably, the Tc can be gradually enhanced to above 400 K owing to the Fermi surface evolution during a pressure loading‐deloading process. Such an observation sheds light on the understanding and control of emergent magnetic states in practical spintronic applications.This article is protected by copyright. All rights reserved

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Tunable high-temperature itinerant antiferromagnetism in a van der Waals magnet

Junho Seo,Eun Su An,Taesu Park,Soo-Yoon Hwang,Gi-Yeop Kim,Kyung Song,Woo-suk Noh,J. Y. Kim,Gyu Seung Choi,Minhyuk Choi,Eunseok Oh,Kenji Watanabe,Takashi Taniguchi,J. -H. Park,Youn Jung Jo,Han Woong Yeom,Si-Young Choi,Ji Hoon Shim,Jun Sung Kim

DOI: https://doi.org/10.1038/s41467-021-23122-y

IF: 16.6

2021-05-14

Nature Communications

Abstract:Abstract Discovery of two dimensional (2D) magnets, showing intrinsic ferromagnetic (FM) or antiferromagnetic (AFM) orders, has accelerated development of novel 2D spintronics, in which all the key components are made of van der Waals (vdW) materials and their heterostructures. High-performing and energy-efficient spin functionalities have been proposed, often relying on current-driven manipulation and detection of the spin states. In this regard, metallic vdW magnets are expected to have several advantages over the widely-studied insulating counterparts, but have not been much explored due to the lack of suitable materials. Here, we report tunable itinerant ferro- and antiferromagnetism in Co-doped Fe 4 GeTe 2 utilizing the vdW interlayer coupling, extremely sensitive to the material composition. This leads to high T N antiferromagnetism of T N ~ 226 K in a bulk and ~210 K in 8 nm-thick nanoflakes, together with tunable magnetic anisotropy. The resulting spin configurations and orientations are sensitively controlled by doping, magnetic field, and thickness, which are effectively read out by electrical conduction. These findings manifest strong merits of metallic vdW magnets as an active component of vdW spintronic applications.

multidisciplinary sciences
Magnetism Control with Enhanced Hard Magnetic Temperature in Heterostructures Based on the Van Der Waals Magnet Fe5GeTe2

Chunsheng Wang,Kejia Zhu,Yupeng Ma,Longyu Lu,Tao Hu,Liang Li,Xucai Kan,Yimin Xiong,Yingying Zhang,Guopeng Wang,Zhengcao Li,Mingliang Tian

DOI: https://doi.org/10.1103/physrevb.108.094408

IF: 3.7

2023-01-01

Physical Review B

Abstract:The discovery of two-dimensional magnets with intrinsic ferromagnetic or antiferromagnetic orders has opened up promising prospects for exploring magnetism at the desired thickness, paving the way for novel spintronic applications. In practice, the manipulation of the magnetic state in van der Waals ferromagnets is highly demanding but remains a significant challenge. In this work, we demonstrate that the magnetic states of the Fe5GeTe2 (FGT)-based heterostructures can be substantially tuned through a natural oxidation process. During this process, the exchange bias effect is observed in the naturally oxidized FGT flakes, confirming the existence of exchange coupling between the ferromagnetic FGT layer and antiferromagnetic oxide layer. Through the exchange coupling, the formed oxide layer affects the magnetic ordering of the Fe1 sites and magnetic anisotropy, which is evidenced by the increment of hard magnetic temperature. Theoretical calculations shed light on the crucial role of the oxide layer in the magnetic state transitions. These results provide valuable insights into the understanding and manipulation of the emergent magnetic states, leading to significant advances in the realization of practical two-dimensional spintronics.
Modulating Above-Room-temperature Magnetism in Ga-implanted Fe5GeTe2 Van Der Waals Magnets

Yanan Yuan,Daxiang Liu,Jingjing Yu,Guanhua Zhang,Xiang Chen,Ruiqi Liu,Siyu Wang,Fangfang Pei,Long Wei,Zhi Li,Junming Guo,Shouguo Wang,Zhaoliang Liao,Wensheng Yan,Ziqiang Qiu,Mengmeng Yang,Qian Li

DOI: https://doi.org/10.1063/5.0168468

IF: 6.6351

2023-01-01

APL Materials

Abstract:The creation of van der Waals (vdW) ferromagnets with tunable Curie temperature (TC) and magnetic anisotropy is essential in developing vdW magnet-based devices. Here, we report an effective and reliable method for modulating the magnetic properties of vdW Fe5GeTe2 by site-specific Ga+ implantation. In this study, we report an easy axis in the ab-plane for bulk Fe5GeTe2 (TC = 310 K) and an axis out of the plane for thin Fe5GeTe2 flakes (TC = 290 K). Combining element-resolved photoemission electron microscopy and spatially resolved magneto-optic Kerr microscopy, we find that the implantation of a tiny amount of 10−3 Ga+·Å−3 in Fe5GeTe2 greatly enhances the TC from 290 to 360 K and switches the magnetic easy axis from the out-of-plane c axis to the ab-plane. The room-temperature x-ray magnetic circular dichroism signal is enhanced from 0% to 9% at an implantation level of 10−2 Ga+·Å−3. These results provide new opportunities for tailoring the magnetic properties of vdW materials beyond room temperature.
Layer-Number-Dependent Magnetism and Anomalous Hall Effect in Van Der Waals Ferromagnet Fe5GeTe2

Yazhou Deng,Ziji Xiang,Bin Lei,Kejia Zhu,Haimen Mu,Weizhuang Zhuo,Xiangyu Hua,Mingjie Wang,Zhengfei Wang,Guopeng Wang,Mingliang Tian,Xianhui Chen

DOI: https://doi.org/10.1021/acs.nanolett.2c02696

IF: 10.8

2022-01-01

Nano Letters

Abstract:Realization of ferromagnetism in the two-dimensional (2D) van der Waals (vdW) crystals opens up a vital route to understand the magnetic ordering in the 2D limit and to design novel spintronics. Here, we report enriched layer-number-dependent magnetotransport properties in the vdW ferromagnet Fe5GeTe2. By studying the magnetoresistance and anomalous Hall effect (AHE) in nanoflakes with thicknesses down to monolayer, we demonstrate that while the bulk crystals exhibit soft ferromagnetism with an in-plane magnetic anisotropy, hard ferromagnetism develops upon thinning, and a perpendicular easy-axis anisotropy is realized in bilayer flakes, which is accompanied by a pronounced enhancement of AHE because of extrinsic mechanisms. For the monolayer flakes, the hard ferromagnetism is replaced by spin-glass-like behavior, in accordance with the localization effect in the 2D limit. Our results highlight the thickness-based tunability of the magnetotransport properties in the atomically thin vdW magnets that promises engineering of high-performance spintronic devices.
Iron-based ferromagnetic van der Waals materials

Minwoong Joe,Pawan Kumar Srivastava,Budhi Singh,Hyobin Ahn,Changgu Lee

DOI: https://doi.org/10.1088/1361-6463/ac18eb

2021-09-10

Abstract:Two-dimensional magnets with high Curie temperatures have recently been produced by incorporating the prototypical ferromagnetic element, iron, into 2D van der Waals layers using the iron-based layered compounds known as FexGeTe2 (x = 3, 4, 5). In these materials, each layer consists of an FexGe slab sandwiched by chalcogen tellurium (Te) atoms and the layers are stacked by van der Waals interactions. Their intrinsically high Curie temperatures, as high as room temperature, and large magnetization have drawn significant attention. Moreover, their ability to be tuned using their extrinsic parameters, such as gating and doping, makes their application in spintronics promising. Since they are primarily metallic materials with high electrical conductivity, it is easy to characterize their transport properties and thus directly use them for spintronic devices. In this review, we summarize the magnetic properties of layered iron-based magnetic materials and the spin transport phenomena in devices made of these materials, and provide perspective and insight into the characteristics of these unique materials.

physics, applied
Proximity‐Coupling‐Induced Significant Enhancement of Coercive Field and Curie Temperature in 2D van der Waals Heterostructures

Luman Zhang,Xinyu Huang,Hongwei Dai,Mingshan Wang,Hui Cheng,Lei Tong,Zheng Li,Xiaotao Han,Xia Wang,Lei Ye,Junbo Han

DOI: https://doi.org/10.1002/adma.202002032

IF: 29.4

2020-08-16

Advanced Materials

Abstract:Magnetism in 2D has long been the focus of condensed matter physics due to its important applications in spintronic devices. A particularly promising aspect of 2D magnetism is the ability to fabricate 2D heterostructures with engineered optical, electrical, and quantum properties. Recently, the discovery of intrinsic ferromagnetisms in atomic thick materials has provided a new platform for investigations of fundamental magnetic physics. In contrast to 2D CrI3 and Cr2Ge2Te6 insulators, itinerant ferromagnetic Fe3GeTe2 (FGT), which has a larger intrinsic perpendicular anisotropy, higher Curie temperature (TC), and relatively better stability, is a promising candidate for achieving permanent room‐temperature ferromagnetism through interface or component engineering. Here, it is shown that the ferromagnetic properties of FGT thin flakes can be modulated through coupling with a FePS3. The magneto‐optical Kerr effect results show that the TC of FGT is improved by more than 30 K and that the coercive field is increased by ≈100% due to the proximity coupling effect, which changes the spin textures of FGT at the interface. This work reveals that antiferromagnet/ferromagnet coupling is a promising way to engineer the magnetic properties of itinerant 2D ferromagnets, which paves the way for applications in advanced magnetic spintronic and memory devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Hard Ferromagnetism in Van Der Waals Fe3GaTe2 Nanoflake Down to Monolayer

Mingjie Wang,Bin Lei,Kejia Zhu,Yazhou Deng,Mingliang Tian,Ziji Xiang,Tao Wu,Xianhui Chen

DOI: https://doi.org/10.1038/s41699-024-00460-1

IF: 10.516

2024-01-01

npj 2D Materials and Applications

Abstract:Two-dimensional (2D) magnetic materials are of not only fundamental scientific interest but also promising candidates for numerous applications. However, so far only a few intrinsic magnets with long-ranged order down to the 2D limit have been experimentally established. Here, we report that the intrinsic 2D ferromagnetism can be realized in van der Waals (vdW) Fe3GaTe2 nanoflake down to monolayer. By measuring the Hall resistance and magnetoresistance, we demonstrate that the Fe3GaTe2 monolayer exhibits 2D hard ferromagnetism with record-high Cure temperature (Tc) of 240 K for the monolayer of known intrinsic ferromagnets. Both of square-shaped hysteresis loops with near-vertical jump in anomalous Hall effect (AHE) and the negative magnetoresistance (NMR) behavior with an applied out-of-plane magnetic field reveal robust perpendicular magnetic anisotropy (PMA) in Fe3GaTe2 nanoflakes down to the monolayer limit. Furthermore, we find the intrinsic mechanism that stems from the Berry curvature of electronic bands dominates AHE of nanoflakes in the low temperature range. Our results not only provide an excellent candidate material for next-generation spintronic applications, but also open up a platform for exploring physical mechanisms in 2D ferromagnetism.
Interface‐Enhanced Ferromagnetism with Long‐Distance Effect in van der Waals Semiconductor

Wenxuan Zhu,Cheng Song,Lei Han,Hua Bai,Qian Wang,Siqi Yin,Lin Huang,Tongjin Chen,Feng Pan

DOI: https://doi.org/10.1002/adfm.202108953

IF: 19

2021-11-12

Advanced Functional Materials

Abstract:Abstract Ferromagnetic semiconductors discovered in 2D materials open an avenue for highly integrated and multifunctional spintronics. The Curie temperature ( T C ) of existing 2D ferromagnetic semiconductors is extremely low and the modulation effect of their magnetism is limited compared with their 2D metallic counterparts. The interfacial effect is found to effectively manipulate the 3D magnetism, providing a unique opportunity for tailoring the 2D magnetism. Here, it is demonstrated that the T C of a 2D ferromagnetic semiconductor Cr 2 Ge 2 Te 6 (CGT) can be enhanced by 130% (from ≈65 K to above 150 K) when adjacent to a tungsten layer. The interfacial W–Te bonding contributes to the T C enhancement with a strong perpendicular magnetic anisotropy, guaranteeing efficient magnetization switching by the spin‐orbit torque with a low current density at 150 K. Distinct from the rapid attenuation in conventional magnets, the interfacial effect exhibits a weak dependence on CGT thickness and a long‐distance effect (more than 10 nm) due to the weak interlayer coupling inherent to 2D magnets. This work not only reveals a unique interfacial behavior in 2D materials, but also advances the process toward practical 2D spintronics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Continuous Manipulation of Magnetic Anisotropy in a Van Der Waals Ferromagnet Via Electrical Gating

Ming Tang,Junwei Huang,Feng Qin,Kun Zhai,Toshiya Ideue,Zeya Li,Fanhao Meng,Anmin Nie,Linglu Wu,Xiangyu Bi,Caorong Zhang,Ling Zhou,Peng Chen,Caiyu Qiu,Peizhe Tang,Haijun Zhang,Xiangang Wan,Lin Wang,Zhongyuan Liu,Yongjun Tian,Yoshihiro Iwasa,Hongtao Yuan

DOI: https://doi.org/10.1038/s41928-022-00882-z

IF: 33.255

2022-01-01

Nature Electronics

Abstract:Controlling the magnetic anisotropy of ferromagnetic materials plays a key role in magnetic switching devices and spintronic applications. Examples of spin-orbit torque devices with different magnetic anisotropy geometries (in-plane or out-of-plane directions) have been demonstrated with novel magnetization switching mechanisms for extended device functionalities. Normally, the intrinsic magnetic anisotropy in ferromagnetic materials is unchanged within a fixed direction, and thus, it is difficult to realize multifunctionality devices. Therefore, continuous modulation of magnetic anisotropy in ferromagnetic materials is highly desired but remains challenging. Here, we demonstrate a gate-tunable magnetic anisotropy transition from out-of-plane to canted and finally to in-plane in layered Fe_5GeTe_2 by combining the measurements of the angle-dependent anomalous Hall effect and magneto-optical Kerr effect with quantitative Stoner-Wohlfarth analysis. The magnetic easy axis continuously rotates in a spin-flop pathway by gating or temperature modulation. Such observations offer a new avenue for exploring magnetization switching mechanisms and realizing new spintronic functionalities.
Layer-Number-Dependent Magnetism in the Co-Doped van der Waals Ferromagnet Fe3GaTe2

Mingjie Wang,Kejia Zhu,Bin Lei,Yazhou Deng,Tao Hu,Dongsheng Song,Haifeng Du,Mingliang Tian,Ziji Xiang,Tao Wu,Xianhui Chen

DOI: https://doi.org/10.1021/acs.nanolett.3c05148

2024-04-10

Abstract:Recently, van der Waals (vdW) antiferromagnets have been proposed to be crucial for spintronics due to their favorable properties compared to ferromagnets, including robustness against magnetic perturbation and high frequencies of spin dynamics. High-performance and energy-efficient spin functionalities often depend on the current-driven manipulation and detection of spin states, highlighting the significance of two-dimensional metallic antiferromagnets, which have not been much explored due to the lack of suitable materials. Here, we report a new metallic vdW antiferromagnet obtained from the ferromagnet Fe3GaTe2 by cobalt (Co) doping. Through the layer-number-dependent Hall resistance and magnetoresistance measurements, an evident odd-even layer-number effect has been observed in its few-layered flakes, suggesting that it could host an A-type antiferromagnetic structure. This peculiar layer-number-dependent magnetism in Co-doped Fe3GaTe2 helps unravel the complex magnetic structures in such doped vdW magnets, and our finding will enrich material candidates and spin functionalities for spintronic applications.
Large Magnetic Anisotropy in van der Waals Ferromagnet Fe 3 GaTe 2 above Room Temperature

Yilian Xi,Hanqing Shi,Jingwei Zhang,Heping Li,Ningyan Cheng,Hang Xu,Jiaqi Liu,Keren Li,Huaiming Guo,Haifeng Feng,Jianfeng Wang,Weichang Hao,Yi Du

DOI: https://doi.org/10.1021/acs.jpclett.4c02426

IF: 6.888

2024-10-22

The Journal of Physical Chemistry Letters

Abstract:Discoveries of above-room-temperature intrinsic ferromagnetism in two-dimensional (2D) van der Waals (vdW) materials offer a platform for studying fundamental 2D magnetism and spintronic devices, especially the recently discovered above-room-temperature 2D vdW Fe(3)GaTe(2) (FGaT). However, the magnetic mechanism in FGaT remains elusive. Here, a detailed investigation using magnetic force microscopy on the thickness-dependent magnetic behavior of FGaT single crystals is reported. The Heisenberg...

chemistry, physical,physics, atomic, molecular & chemical,nanoscience & nanotechnology,materials science, multidisciplinary
Above-room-temperature strong intrinsic ferromagnetism in 2D van der Waals Fe3GaTe2 with large perpendicular magnetic anisotropy

Gaojie Zhang,Fei Guo,Hao Wu,Xiaokun Wen,Li Yang,Wen Jin,Wenfeng Zhang,Haixin Chang

DOI: https://doi.org/10.1038/s41467-022-32605-5

2022-08-29

Abstract:The absence of two-dimensional (2D) van der Waals (vdW) ferromagnetic crystals with both above-room-temperature strong intrinsic ferromagnetism and large perpendicular magnetic anisotropy (PMA) severely hinders practical applications of 2D vdW crystals in next-generation low-power magnetoelectronic and spintronic devices. Here, we report a vdW intrinsic ferromagnetic crystal Fe3GaTe2 that exhibits record-high above-room-temperature Curie temperature (Tc, ~350-380 K) for known 2D vdW intrinsic ferromagnets, high saturation magnetic moment (40.11 emu/g), large PMA energy density (~4.79 × 105 J/m3), and large anomalous Hall angle (3%) at room temperature. Such large room-temperature PMA is better than conventional widely-used ferromagnetic films like CoFeB, and one order of magnitude larger than known 2D vdW intrinsic ferromagnets. Room-temperature thickness and angle-dependent anomalous Hall devices and direct magnetic domains imaging based on Fe3GaTe2 nanosheet have been realized. This work provides an avenue for room-temperature 2D ferromagnetism, electrical control of 2D ferromagnetism and promote the practical applications of 2D-vdW-integrated spintronic devices.
Room-temperature van der Waals 2D ferromagnet switching by spin-orbit torques

Weihao Li,Wenkai Zhu,Gaojie Zhang,Hao Wu,Shouguo Zhu,Runze Li,Enze Zhang,Xiaomin Zhang,Yongcheng Deng,Jing Zhang,Lixia Zhao,Haixin Chang,Kaiyou Wang

2023-04-21

Abstract:Emerging wide varieties of the two-dimensional (2D) van der Waals (vdW) magnets with atomically thin and smooth interfaces holds great promise for next-generation spintronic devices. However, due to the lower Curie temperature of the vdW 2D ferromagnets than room temperature, electrically manipulating its magnetization at room temperature has not been realized. In this work, we demonstrate the perpendicular magnetization of 2D vdW ferromagnet Fe3GaTe2 can be effectively switched at room temperature in Fe3GaTe2/Pt bilayer by spin-orbit torques (SOTs) with a relatively low current density of 1.3 10^7A/cm2. Moreover, the high SOT efficiency of \xi_{DL}~0.22 is quantitatively determined by harmonic measurements, which is higher than those in Pt-based heavy metal/conventional ferromagnet devices. Our findings of room-temperature vdW 2D ferromagnet switching by SOTs provide a significant basis for the development of vdW-ferromagnet-based spintronic applications.

Applied Physics,Materials Science
Atomically Thin 2D van der Waals Magnetic Materials: Fabrications, Structure, Magnetic Properties and Applications

Wei He,Lingling Kong,Weina Zhao,Peng Yu

DOI: https://doi.org/10.3390/coatings12020122

IF: 3.236

2022-01-21

Coatings

Abstract:Two-dimensional (2D) van der Waals (vdW) magnetic materials are considered to be ideal candidates for the fabrication of spintronic devices because of their low dimensionality, allowing the quantization of electronic states and more degrees of freedom for device modulation. With the discovery of few-layer Cr2Ge2Te6 and monolayer CrI3 ferromagnets, the magnetism of 2D vdW materials is becoming a research focus in the fields of material science and physics. In theory, taking the Heisenberg model with finite-range exchange interactions as an example, low dimensionality and ferromagnetism are in competition. In other words, it is difficult for 2D materials to maintain their magnetism. However, the introduction of anisotropy in 2D magnetic materials enables the realization of long-range ferromagnetic order in atomically layered materials, which may offer new effective means for the design of 2D ferromagnets with high Curie temperature. Herein, current advances in the field of 2D vdW magnetic crystals, as well as intrinsic and induced ferromagnetism or antiferromagnetism, physical properties, device fabrication, and potential applications, are briefly summarized and discussed.

materials science, multidisciplinary,physics, applied, coatings & films
Efficient current-induced spin torques and field-free magnetization switching in a room-temperature van der Waals magnet

Chao Yun,Haoran Guo,Zhongchong Lin,Licong Peng,Zhongyu Liang,Miao Meng,Biao Zhang,Zijing Zhao,Leran Wang,Yifei Ma,Yajing Liu,Weiwei Li,Shuai Ning,Yanglong Hou,Jinbo Yang,Zhaochu Luo

DOI: https://doi.org/10.1126/sciadv.adj3955

IF: 13.6

2023-12-09

Science Advances

Abstract:The discovery of magnetism in van der Waals (vdW) materials has established unique building blocks for the research of emergent spintronic phenomena. In particular, owing to their intrinsically clean surface without dangling bonds, the vdW magnets hold the potential to construct a superior interface that allows for efficient electrical manipulation of magnetism. Despite several attempts in this direction, it usually requires a cryogenic condition and the assistance of external magnetic fields, which is detrimental to the real application. Here, we fabricate heterostructures based on Fe 3 GaTe 2 flakes that have room-temperature ferromagnetism with excellent perpendicular magnetic anisotropy. The current-driven nonreciprocal modulation of coercive fields reveals a high spin-torque efficiency in the Fe 3 GaTe 2 /Pt heterostructures, which further leads to a full magnetization switching by current. Moreover, we demonstrate the field-free magnetization switching resulting from out-of-plane polarized spin currents by asymmetric geometry design. Our work could expedite the development of efficient vdW spintronic logic, memory, and neuromorphic computing devices.

multidisciplinary sciences
Above-Room-Temperature Ferromagnetism Regulation in Two-Dimensional Heterostructures by van der Waals Interfacial Magnetochemistry

Gaojie Zhang,Hao Wu,Li Yang,Zheng Chen,Wen Jin,Bichen Xiao,Wenfeng Zhang,Changsheng Song,Haixin Chang

DOI: https://doi.org/10.1021/jacs.4c13391

IF: 15

2024-12-02

Journal of the American Chemical Society

Abstract:Most methods for regulating physical and chemical properties of materials involve the breaking and formation of chemical bonds, which inevitably change local structures. Two-dimensional (2D) ferromagnets are critical for spintronic memory and quantum devices, but most of them maintain ferromagnetism at low temperature, and multiaspect control of 2D ferromagnetism at room temperature or above is still missing. Here, we report a nondestructive, van der Waals (vdW) interfacial magnetochemistry...

chemistry, multidisciplinary
Tunable magnetic anisotropy, Curie temperature and band alignment of two-dimensional ferromagnet VSiSnN4 via non-volatile ferroelectrical control

Kang-Jie Li,Ze-Quan Wang,Zu-Xin Chen,Yusheng Hou

2024-05-15

Abstract:The emergence of multiferroic materials, which possess both ferromagnetic (FM) and ferroelectric (FE) properties, drive advancements in magnetoelectric applications and the next generation of spintronics. Based on first-principles calculations, we investigate an engineered two-dimensional multiferroic van der Waals heterostructures consisting of FM VSiSnN4 monolayer (ML) and fully hydrogenated FE AlN bilayer. We find that the magnetic anisotropy of VSiSnN4 ML is tunable between out-of-plane and in-plane and a phase transition between semiconductor and metal is induced in VSiSnN4/AlN bilayer when the FE polarization direction of AlN bilayer is reversed. Surprisingly, when the FE polarization of AlN bilayer is upward, the Curie temperature of VSiSnN4/AlN bilayer can be significantly increased from 204K to 284K. Such non-volatile and tunable magnetic anisotropy, Curie temperature and band alignment in VSiSnN4/AlN multiferroic heterostructure are highly promising for future low-current operation of data storage and logic devices.

Materials Science

CSI: New Evidence - A Progress Report

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Magnetic Anisotropy Control with Curie Temperature above 400 K in a van der Waals Ferromagnet for Spintronic Device

Tunable high-temperature itinerant antiferromagnetism in a van der Waals magnet

Magnetism Control with Enhanced Hard Magnetic Temperature in Heterostructures Based on the Van Der Waals Magnet Fe5GeTe2

Modulating Above-Room-temperature Magnetism in Ga-implanted Fe5GeTe2 Van Der Waals Magnets

Layer-Number-Dependent Magnetism and Anomalous Hall Effect in Van Der Waals Ferromagnet Fe5GeTe2

Iron-based ferromagnetic van der Waals materials

Proximity‐Coupling‐Induced Significant Enhancement of Coercive Field and Curie Temperature in 2D van der Waals Heterostructures

Hard Ferromagnetism in Van Der Waals Fe3GaTe2 Nanoflake Down to Monolayer

Interface‐Enhanced Ferromagnetism with Long‐Distance Effect in van der Waals Semiconductor

Continuous Manipulation of Magnetic Anisotropy in a Van Der Waals Ferromagnet Via Electrical Gating

Layer-Number-Dependent Magnetism in the Co-Doped van der Waals Ferromagnet Fe3GaTe2

Large Magnetic Anisotropy in van der Waals Ferromagnet Fe 3 GaTe 2 above Room Temperature

Above-room-temperature strong intrinsic ferromagnetism in 2D van der Waals Fe3GaTe2 with large perpendicular magnetic anisotropy

Room-temperature van der Waals 2D ferromagnet switching by spin-orbit torques

Atomically Thin 2D van der Waals Magnetic Materials: Fabrications, Structure, Magnetic Properties and Applications

Efficient current-induced spin torques and field-free magnetization switching in a room-temperature van der Waals magnet

Above-Room-Temperature Ferromagnetism Regulation in Two-Dimensional Heterostructures by van der Waals Interfacial Magnetochemistry

Tunable magnetic anisotropy, Curie temperature and band alignment of two-dimensional ferromagnet VSiSnN4 via non-volatile ferroelectrical control