Abstract:The emergence of magnetic transition metal dichalcogenides has significantly advanced the development of valleytronics due to the spontaneous breaking of time-reversal symmetry and space-inversion symmetry. However, the lack of regulation methods has prevented researchers from exploring their potential applications. Herein, we propose to use strain engineering to control the spin-valley coupling in the sliding ferroelectric bilayer 2H-VX2 (X = S, Se, Te). Four multiferroic states are constructed by combining the sliding ferroelectricity and antiferromagnetism in the R-stacking bilayer VX2, where the spin and valley polarizations are coupled together from the layer-dependent spin-polarized band structures. By applying a small external strain or pressure on the out-of-plane van der Waals direction, we predicted that there is an antiferromagnetic to magnetic transition in the bilayer VX2, leading to the interesting spin-polarized and chiral circularly polarized radiation at K+ and K- valleys, similar to those found in the magnetic monolayer. To comprehend the coupling between various degrees of freedom in these multiferroic systems, we have developed an effective k·p model. This model unveils a linear relationship between the electric polarization generated by interlayer sliding and the energy difference of the valence band maximum at K+ and K- valleys. Thus, providing an alternate method to measure the electric polarization in the sliding ferroelectrics. Based on the strong coupling between the strain, spin-valley, and electric polarization, it is likely to use the strain to control the interesting emerging properties of 2H-VX2 such as the anomalous valley Hall effect.

Strain tuning of the Curie temperature and valley polarization in two dimensional ferromagnetic WSe2/CrSnSe3 heterostructure

Effect of strain engineering on magnetism-induced valley splitting in WSe 2 based on the WSe 2 /CrSe 2 heterojunction

Effect of Strain Engineering on Magnetism-Induced Valley Splitting in WSe2 Based on the WSe2/CrSe2 Heterojunction

Strain-induced valley transport in CrBr$_3$/WSe$_2$/CrBr$_3$ van der Waals heterostructure

Modulation of Spin–valley Splitting in a Two-Dimensional MnPSe3/CrBr3 Van Der Waals Heterostructure

Strain-tunable Valley Polarization and Localized Excitons in Monolayer WSe2.

Nanomechanical probing and strain tuning of the Curie temperature in suspended Cr2Ge2Te6-based heterostructures

Strain Engineering the Spin-Valley Coupling of the R-stacking Sliding Ferroelectric Bilayer 2H-VX2 (X = S, Se, Te)

Tunable valley characteristics of WSe2 and WSe2/VSe2 heterostructure

Modulating intrinsic anomalous Hall effect in Fe3GeTe2 monolayer via strain engineering

Strain Modulation of the Spin-Valley Polarization in Monolayer Manganese Chalcogenophosphates Alloys

Manipulation of Valley Pseudospin in WSe2/CrI3 Heterostructures by the Magnetic Proximity Effect

Modulating the Electronic Structure and Interface Contact of WSe2/CrSe2 Van Der Waals Heterostructures by Strain Engineering: Insights from First-Principles Calculations

Nanomechanical probing and strain tuning of the Curie temperature in suspended Cr 2 Ge 2 Te 6 -based heterostructures

Quantum computational analysis of strain induced electronic and thermoelectric properties of H phase and T phase coupled TMDs van der Waal heterostructures

Strain-Induced Electronic Structure Changes in Stacked van der Waals Heterostructures

Manipulation of Valley-Pseudospin in 2D WTe2/CrI3 Van Der Waals Heterostructure by Magnetic Proximity Effect

Tailoring coercive fields and the Curie temperature via proximity coupling in WSe$_2$/Fe$_3$GeTe$_2$ van der Waals heterostructures

Magnetic Proximity Effect and Tunable Valley Splitting in 2D CrGeTe3/MTe2 (M = Mo, W) Van Der Waals Heterostructures

Strain control of exciton and trion spin-valley dynamics in monolayer transition metal dichalcogenides

Strain-tunable Ferromagnetism and Chiral Spin Textures in Two-Dimensional Janus Chromium Dichalcogenides