Abstract:This study focuses on the captivating interplay between the ferromagnetic Fe3GeTe2 and the piezoelectric α‐In2Se3, both 2D van der Waals (vdW) materials. Strained heterojunctions exhibit several compelling transformations: increased domain density, reduced Curie temperature, and emergent magnetostrictive ferromagnetic domains. Using α‐In2Se3 is a versatile approach to strain‐tune vdW materials, including graphite and Te based vdW chalcogenides. The van der Waals interaction enables atomically thin layers of exfoliated 2D materials to be interfaced in heterostructures with relaxed epitaxy conditions, however, the ability to exfoliate and freely stack layers without any strain or structural modification is by no means ubiquitous. In this work, the piezoelectricity of the exfoliated van der Waals piezoelectric α‐In2Se3 is utilized to modify the magnetic properties of exfoliated Fe3GeTe2, a van der Waals ferromagnet, resulting in increased domain wall density, reductions in the transition temperature ranging from 5 to 20 K, and an increase in the magnetic coercivity. Structural modifications at the atomic level are corroborated by a comparison to a graphite/α‐In2Se3 heterostructure, for which a decrease in the Tuinstra‐Koenig ratio is found. Magnetostrictive ferromagnetic domains are also observed, which may contribute to the enhanced magnetic coercivity. Density functional theory calculations and atomistic spin dynamic simulations show that the Fe3GeTe2 layer is compressively strained by 0.4%, reducing the exchange stiffness and magnetic anisotropy. The incorporation of α‐In2Se3 may be a general strategy to electrostatically strain interfaces within the paradigm of hexagonal boron nitride‐encapsulated heterostructures, for which the atomic flatness is both an intrinsic property and paramount requirement for 2D van der Waals heterojunctions.

Nanomechanical probing and strain tuning of the Curie temperature in suspended Cr2Ge2Te6-based heterostructures

Nanomechanical probing and strain tuning of the Curie temperature in suspended Cr 2 Ge 2 Te 6 -based heterostructures

Nanomechanical probing and strain tuning of the Curie temperature in suspended Cr$_2$Ge$_2$Te$_6$ heterostructures

Strain-sensitive ferromagnetic two-dimensional Cr2Te3

Strain tuning of the Curie temperature and valley polarization in two dimensional ferromagnetic WSe2/CrSnSe3 heterostructure

Tunable Electronic Properties and Enhanced Ferromagnetism in Cr2Ge2Te6 Monolayer by Strain Engineering

Enhanced Room Temperature Ferromagnetism in Highly Strained 2D Semiconductor Cr 2 Ge 2 Te 6

Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr 2 Ge 2 Te 6

Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6

Magnetoelectric Tuning of 2D Ferromagnetism in 1T-CrTe2 through In2Se3 Substrate

Strain‐Modulated Ferromagnetism at an Intrinsic van der Waals Heterojunction

Tuning the Curie temperature of a 2D magnet/topological insulator heterostructure to above room temperature by epitaxial growth

Tailoring coercive fields and the Curie temperature via proximity coupling in WSe$_2$/Fe$_3$GeTe$_2$ van der Waals heterostructures

Modulating intrinsic anomalous Hall effect in Fe3GeTe2 monolayer via strain engineering

Robust Two-Dimensional Ferromagnetism in Cr5Te8/CrTe2 Heterostructure with Curie Temperature above 400 K

Reversible strain-induced magnetic phase transition in a van der Waals magnet

Temperature-dependent anisotropy variation in quasi-two-dimensional ferromagnetic Cr5Te8

Magnetic properties manipulation of CrTe 2 bilayer through strain and self-intercalation

Epitaxial van der Waals heterostructures of Cr2Te3 on 2D materials

Transition from Ferromagnetic Semiconductor to Ferromagnetic Metal with Enhanced Curie Temperature in Cr2Ge2Te6 Via Organic Ion Intercalation.

Enhanced ferromagnetism in artificially stretched lattice in quasi two-dimensional Cr2Ge2Te6