Abstract:Monolayers of transition metal dichalcogenides (TMDs) have recently emerged as a promising optoelectronic platform. To leverage their full potential, however, it is important to understand and engineer the properties of the different exciton species that exist in these monolayers, as well as to control their transport through the material. A promising approach relies on engineering strain landscapes in atomically thin semiconductors that excitons navigate. In WSe$_2$ monolayers, for example, localized strain has been used to control the emission wavelength of excitons, induce exciton funneling and conversion, and even realize single-photon sources and quantum dots. Before these phenomena can be fully leveraged for applications, including quantum information processing, the details of excitons' interaction with the strain landscape must be well understood. To address this, we have developed a cryogenic technique capable of probing the dynamics of both bright and dark excitons in nanoscale strain landscapes in TMDs. In our approach, a nanosculpted tapered optical fiber is used to simultaneously generate strain and probe the near-field optical response of WSe$_2$ monolayers at 5 K. When the monolayer is pushed by the fiber, its lowest energy photoluminescence (PL) peaks red shift by as much as 390 meV, (corresponding to 20% of the bandgap of an unstrained WSe$_2$ monolayer). The red-shifting peaks are polarized perpendicularly to the WSe$_2$ plane and have long rising times (10 ps) and lifetimes (52 ps), indicating that they originate from nominally spin-forbidden dark excitons. Taken together, these observations indicate that dark excitons are funneled to the high-strain regions during their long lifetime and are the principal participants in drift and diffusion at cryogenic temperatures. Our work elucidates the important role that dark excitons play in locally strained WSe$_2$.

Strain control of exciton and trion spin-valley dynamics in monolayer transition metal dichalcogenides

Emergence of non-uniform strain induced exciton species in homo- and heterobilayer transition metal dichalcogenides

Simultaneously Enhanced Emission and Valley Polarization of Dark Excitons of Monolayer WSe 2 Using the Dual Effect of Strain and Magnetic Proximity

Signatures of valley drift in the diversified band dispersions of bright, gray, and dark excitons in MoS2 monolayers under uni-axial strains

Strain fingerprinting of exciton valley character in 2D semiconductors

Monitoring Local Strain Vector in Atomic-Layered MoSe2 by Second-Harmonic Generation

Strain-tunable valley polarization and localized excitons in monolayer WSe_2

Pressure-Dependent Light Emission of Charged and Neutral Excitons in Monolayer MoSe2

Strain-dependent exciton diffusion in transition metal dichalcogenides

Strain-Dependent Band Splitting and Spin-Flip Dynamics in Monolayer WS 2

Unraveling the strain tuning mechanism of interlayer excitons in WSe2/MoSe2heterostructure

Control of the valley polarization of monolayer WSe 2 by dexter-like coupling

Valley-hybridized gate-tunable 1D exciton confinement in MoSe2

Shear-strain-mediated photoluminescence manipulation in two-dimensional transition metal dichalcogenides

Anomalous valley polarization in monolayer MoSe2

Strain Controls Charge Carrier Lifetimes in Monolayer WSe2: Ab Initio Time Domain Analysis

Visualization of Dark Excitons in Semiconductor Monolayers for High-Sensitivity Strain Sensing

Strain-tuned spin polarization and optical conductivity in MoS2/EuS heterostructures

Probing dark exciton navigation through a local strain landscape in a WSe$_2$ monolayer

Monitoring Strain-Controlled Exciton-Phonon Coupling in Layered MoS2 by Circularly Polarized Light

Room temperature interlayer exciton valley polarization and valley Hall effect