Abstract:This study investigates the pressure‐tuned evolution of interlayer exciton dynamics in WS2/MoSe2 heterostructure. It finds that interlayer exciton recombination is faster under pressure due to enhanced interlayer coupling. Pressure strategy is a powerful tuning knob for interlayer exciton relaxation of TMDs heterostructures and provides insights for the design and optimization of related electronic and optoelectronic devices based on such heterostructures. Atomically thin transition metal dichalcogenides (TMDs) heterostructures provide a rich platform for exploring fascinating physics and engineering strategies. A pressure strategy is developed to effectively manipulate the physical properties in such heterostructures. However, there is still a lack of studies on the corresponding pressure‐modulated evolution of carrier dynamics, which is crucial to the performance of electronic and optoelectronic devices. Here, utilizing the diamond anvil cell, the interlayer exciton dynamics of WS2/MoSe2 heterostructure are subtly manipulated by pressure. Intriguingly, with pressure modulation, the enhanced interlayer coupling accelerates the recombination of spatially separated electron and hole, which significantly shortens the interlayer exciton lifetime from 37.10 ps at 0.0 Gpa to 3.03 ps at 2.2 Gpa. For comparison, the intralayer exciton lifetime of monolayer MoSe2 is increased due to the transition of direct to indirect bandgap under pressure. Furthermore, the pressure‐regulated band structure and interlayer coupling are confirmed by photoluminescence and Raman spectroscopy. The results demonstrate that pressure provides a powerful tuning knob for interlayer exciton relaxation of TMDs heterostructure, which is attractive to various electronic and optoelectronic applications based on such heterostructure.

Pressure-Dependent Light Emission of Charged and Neutral Excitons in Monolayer MoSe2

Wrinkle and Near-Resonance Effects on the Vibrational and Electronic Properties in Compressed Monolayer MoSe2

Pressure confinement effect in MoS2 monolayers.

Gas pressure-sensitive regulation of exciton state of monolayer tungsten disulfide

Coupling-Assisted Renormalization of Excitons and Vibrations in Compressed MoSe2–WSe2 Heterostructure

Ultrafast Decay of Interlayer Exciton in WS2/MoSe2 Heterostructure Under Pressure

Gas pressure manipulation of exciton states in monolayer WS2

Tunable exciton-optomechanical coupling in suspended monolayer MoSe2

Excitonic Evolution in WS2/MoS2 Van Der Waals Heterostructures Turned by Out-of-Plane Localized Pressure

Discrete quantum dot like emitters in monolayer MoSe2: Spatial mapping, Magneto-optics and Charge tuning

Strain-modulated optical response in 2D MoSe2 made by Na-assisted CVD on glass

Steady-state nonlinear optical response of excitons in monolayer MoSe$_2$

Robustness of Trion State in Gated Monolayer MoSe2 under Pressure.

Light-emitting devices based on atomically thin MoSe 2

Strain control of exciton and trion spin-valley dynamics in monolayer transition metal dichalcogenides

Efficient Optical Modulation of Exciton State Population in Monolayer MoS2 at Room Temperature

Robustness of momentum-indirect interlayer excitons in MoS2/WSe2 heterostructure against charge carrier doping

Pressure induced metallization with absence of structural transition in layered MoSe2

Using strain to alter the energy bands of the monolayer MoSe2: A systematic study covering both tensile and compressive states

Tailoring Exciton Dynamics of Monolayer Transition Metal Dichalcogenides by Interfacial Electron-Phonon Coupling

Electrically Controlled Interfacial Charge Transfer Induced Excitons in MoSe2-WSe2 Lateral Heterostructure