Abstract:This study investigates the pressure‐tuned evolution of interlayer exciton dynamics in WS2/MoSe2 heterostructure. It finds that interlayer exciton recombination is faster under pressure due to enhanced interlayer coupling. Pressure strategy is a powerful tuning knob for interlayer exciton relaxation of TMDs heterostructures and provides insights for the design and optimization of related electronic and optoelectronic devices based on such heterostructures. Atomically thin transition metal dichalcogenides (TMDs) heterostructures provide a rich platform for exploring fascinating physics and engineering strategies. A pressure strategy is developed to effectively manipulate the physical properties in such heterostructures. However, there is still a lack of studies on the corresponding pressure‐modulated evolution of carrier dynamics, which is crucial to the performance of electronic and optoelectronic devices. Here, utilizing the diamond anvil cell, the interlayer exciton dynamics of WS2/MoSe2 heterostructure are subtly manipulated by pressure. Intriguingly, with pressure modulation, the enhanced interlayer coupling accelerates the recombination of spatially separated electron and hole, which significantly shortens the interlayer exciton lifetime from 37.10 ps at 0.0 Gpa to 3.03 ps at 2.2 Gpa. For comparison, the intralayer exciton lifetime of monolayer MoSe2 is increased due to the transition of direct to indirect bandgap under pressure. Furthermore, the pressure‐regulated band structure and interlayer coupling are confirmed by photoluminescence and Raman spectroscopy. The results demonstrate that pressure provides a powerful tuning knob for interlayer exciton relaxation of TMDs heterostructure, which is attractive to various electronic and optoelectronic applications based on such heterostructure.

Wrinkle and Near-Resonance Effects on the Vibrational and Electronic Properties in Compressed Monolayer MoSe2

Wrinkle and near-resonance effects on the vibrational and electronic properties in compressed monolayer MoSe 2

Pressure confinement effect in MoS2 monolayers.

First-Principles Study of Electronic and Elastic Properties of Hexagonal Layered Crystal MoS2 Under Pressure

Interlayer Coupling Affected Structural Stability in Ultrathin MoS2: an Investigation by High Pressure Raman Spectroscopy

Associated Lattice and Electronic Structural Evolutions in Compressed Multilayer ReS2

Increasing Interlayer Coupling Prevented the Deformation in Compressed Multilayer WSe2

Pressure-Induced Photoluminescence Adjustment and Lattice Disorder in Monolayer Wse2

Lattice and Electronic Structural Evolutions in Compressed Multilayer MnPS3

Pressure-Dependent Light Emission of Charged and Neutral Excitons in Monolayer MoSe2

Substrate-affected Lattice Structural Evolution in Compressed Monolayer ReS2

Thickness-dependent Phase Transition and Optical Behavior of MoS2 Films under High Pressure

Structural evolution and phase transition mechanism of $$\hbox {MoSe}_2$$ under high pressure

Pressure induced metallization with absence of structural transition in layered MoSe2

Pressure induced metallization with absence of structural transition in layered molybdenum diselenide

Correlatively Dependent Lattice and Electronic Structural Evolutions in Compressed Monolayer Tungsten Disulfide

Pressure Effect on the Electronic, Structural, and Vibrational Properties of Layered 2H−mote2

Unveiling Layer-Dependent Interlayer Coupling and Vibrational Properties in MoTe2 under High Pressure

Ultrafast Decay of Interlayer Exciton in WS2/MoSe2 Heterostructure Under Pressure

Pressure-modulated lattice structural evolution in multilayer ZrS3

Anomalous Behavior of 2D Janus Excitonic Layers under Extreme Pressures