Abstract:This study investigates the pressure‐tuned evolution of interlayer exciton dynamics in WS2/MoSe2 heterostructure. It finds that interlayer exciton recombination is faster under pressure due to enhanced interlayer coupling. Pressure strategy is a powerful tuning knob for interlayer exciton relaxation of TMDs heterostructures and provides insights for the design and optimization of related electronic and optoelectronic devices based on such heterostructures. Atomically thin transition metal dichalcogenides (TMDs) heterostructures provide a rich platform for exploring fascinating physics and engineering strategies. A pressure strategy is developed to effectively manipulate the physical properties in such heterostructures. However, there is still a lack of studies on the corresponding pressure‐modulated evolution of carrier dynamics, which is crucial to the performance of electronic and optoelectronic devices. Here, utilizing the diamond anvil cell, the interlayer exciton dynamics of WS2/MoSe2 heterostructure are subtly manipulated by pressure. Intriguingly, with pressure modulation, the enhanced interlayer coupling accelerates the recombination of spatially separated electron and hole, which significantly shortens the interlayer exciton lifetime from 37.10 ps at 0.0 Gpa to 3.03 ps at 2.2 Gpa. For comparison, the intralayer exciton lifetime of monolayer MoSe2 is increased due to the transition of direct to indirect bandgap under pressure. Furthermore, the pressure‐regulated band structure and interlayer coupling are confirmed by photoluminescence and Raman spectroscopy. The results demonstrate that pressure provides a powerful tuning knob for interlayer exciton relaxation of TMDs heterostructure, which is attractive to various electronic and optoelectronic applications based on such heterostructure.

Pressure induced metallization with absence of structural transition in layered MoSe2

Pressure induced metallization with absence of structural transition in layered molybdenum diselenide

First-Principles Study of Electronic and Elastic Properties of Hexagonal Layered Crystal MoS2 Under Pressure

Pressure confinement effect in MoS2 monolayers.

Structural evolution and phase transition mechanism of $$\hbox {MoSe}_2$$ under high pressure

Pressure Effect on the Electronic, Structural, and Vibrational Properties of Layered 2H−mote2

Wrinkle and Near-Resonance Effects on the Vibrational and Electronic Properties in Compressed Monolayer MoSe2

Pressure-induced gap closing and metallization of MoSe$_{2}$ and MoTe$_{2}$

Associated Lattice and Electronic Structural Evolutions in Compressed Multilayer ReS2

Pressure-Induced Photoluminescence Adjustment and Lattice Disorder in Monolayer Wse2

Pressure-induced Semiconducting to Metallic Transition in Multilayered Molybdenum Disulphide.

Interlayer Coupling Affected Structural Stability in Ultrathin MoS2: an Investigation by High Pressure Raman Spectroscopy

Pressure-Dependent Light Emission of Charged and Neutral Excitons in Monolayer MoSe2

Pressure-induced structural transition, metallization, and topological superconductivity in PdSSe

Phase transition and metallization of semiconductor GeSe at high pressure

Ultrafast Decay of Interlayer Exciton in WS2/MoSe2 Heterostructure Under Pressure

High Pressure Structure and Decomposition of MoS$_{2}$

Lattice and Electronic Structural Evolutions in Compressed Multilayer MnPS3

Anomalous Behavior of 2D Janus Excitonic Layers under Extreme Pressures

New High-Pressure Phases of MoSe$_2$ and MoTe$_2$

Regulation of electronic structure of monolayer MoS2 by pressure