Light-emitting Devices Based on Atomically Thin MoSe2
Xinyu Zhang,Xuewen Zhang,Hanwei Hu,Vanessa Li Zhang,Weidong Xiao,Guangchao Shi,Jingyuan Qiao,Nan Huang,Ting Yu,Jingzhi Shang
DOI: https://doi.org/10.1088/1674-4926/45/4/041701
2024-01-01
Journal of Semiconductors
Abstract:Atomically thin MoSe2 layers,as a core member of the transition metal dichalcogenides(TMDs)family,benefit from their appealing properties,including tunable band gaps,high exciton binding energies,and giant oscillator strengths,thus pro-viding an intriguing platform for optoelectronic applications of light-emitting diodes(LEDs),field-effect transistors(FETs),sin-gle-photon emitters(SPEs),and coherent light sources(CLSs).Moreover,these MoSe2 layers can realize strong excitonic emis-sion in the near-infrared wavelengths,which can be combined with the silicon-based integration technologies and further encourage the development of the new generation technologies of on-chip optical interconnection,quantum computing,and quantum information processing.Herein,we overview the state-of-the-art applications of light-emitting devices based on two-dimensional MoSe2 layers.Firstly,we introduce recent developments in excitonic emission features from atomically thin MoSe2 and their dependences on typical physical fields.Next,we focus on the exciton-polaritons and plasmon-exciton polaritons in MoSe2 coupled to the diverse forms of optical microcavities.Then,we highlight the promising applications of LEDs,SPEs,and CLSs based on MoSe2 and their heterostructures.Finally,we summarize the challenges and opportunities for high-quality emis-sion of MoSe2 and high-performance light-emitting devices.