Abstract:Transition metal dichalcogenides (TMDs) have attracted a great deal of attention for potential applications in a variety of areas including integrated optoelectronic devices. Most of TMDs transform from indirect to direct band-gap semiconductors when their thickness is reduced to a monolayer. Therefore, monolayer TMDs could serve as efficient optical gain materials, especially for making nanolasers with the smallest possible volume of active medium. Such lasers with small gain media could be important as light sources for integrated photonics for future on-chip interconnects, where extreme low energy consumption is required. Furthermore, the large exciton binding energy in monolayer TMDs exceeding 0.5 eV makes them important as potential candidate for exciton lasers at room temperature. So far, lasers based on monolayer TMDs have been reported at cryogenic temperatures, employing a monolayer WSe2 coupled onto a GaP photonic-crystal cavity, or a monolayer WS2 with a Si3N4 micro-disk. One of the possible reasons for the low temperature operation is the low Q-cavity as a result of the choices of cavity materials and structures and the associated fabrication precision. Here, we demonstrate the first room-temperature operation of a nanolaser using a monolayer molybdenum ditelluride nanolaser combined with a silicon nanobeam cavity. Lasing operation at 1132 nm is supported by the exciton emission with a linewidth of 0.202 nm and a Q factor of 5605. The room temperature operation shows the feasibility of TMDs nanolaser towards practical application. In addition, the silicon nanobeam cavity would make such 2D-based lasers more attractive for silicon photonics integration.

Optically Pumped Monolayer MoSe2 Excitonic Lasers from Whispering Gallery Mode Microcavities.

Room Temperature Nanocavity Laser with Interlayer Excitons in 2D Heterostructures.

Whispering-gallery Mode Hexagonal Micro-/Nanocavity Lasers [Invited]

Lasing of moiré trapped MoSe 2 /WSe 2 interlayer excitons coupled to a nanocavity

Direct‐Bandgap Bilayer WSe 2 /Microsphere Monolithic Cavity for Low‐Threshold Lasing

Lasing of Moiré Trapped MoSe$_2$/WSe$_2$ Interlayer Excitons Coupled to a Nanocavity

Monolayer Tungsten Disulfide Laser

Room-temperature Continuous-Wave Lasing from Monolayer Molybdenum Ditelluride Integrated with a Silicon Nanobeam Cavity.

In-situ spontaneous emission control of MoSe$_2$-WSe$_2$ interlayer excitons with near-unity quantum yield

Pressure-Dependent Light Emission of Charged and Neutral Excitons in Monolayer MoSe2

Room temperature operation of silicon nanobeam laser based on exciton emission of 2D monolayer MoTe2 (Conference Presentation)

Tuning Excitonic Properties of Monolayer MoS2 with Microsphere Cavity by High-Throughput Chemical Vapor Deposition Method.

2D layered MSe 2 (M = Hf, Ti and Zr) for compact lasers: nonlinear optical properties and GHz lasing

Enhanced Photoluminescence of Monolayer MoSe2 in a Double Resonant Plasmonic Nanocavity with Fano Resonance and Mode Matching

Ultra-Low Threshold Monolayer Semiconductor Nanocavity Lasers

Broadband saturable absorption responses of few-layered MoSe 2 nanosheets for all-solid-state Q-switched lasers

Wideband saturable absorption in few-layer molybdenum diselenide (MoSe2) for Q-switching Yb-, Er- and Tm-doped fiber lasers

Light-emitting devices based on atomically thin MoSe 2

Phonon-assisted Upconversion Photoluminescence in Monolayer MoSe2 and WSe2

Strong photoluminescence enhancement in indirect bandgap MoSe$_2$ nanophotonic resonator

High Temperature Continuous-Wave Pumped Lasing from Large-Area Monolayer Semiconductors Grown by Chemical Vapor Phase Deposition.