Abstract:Monolayers (MLs) of transition metal dichalcogenides (TMDs) such as WSe2 and MoSe2 can be placed by dry stamping directly on broadband dielectric resonators, which have the ability to enhance the spontaneous emission rate and brightness of solid-state emitters at room temperature. We show strongly enhanced emission and directivity modifications in room-temperature photoluminescence mapping experiments. By varying TMD material (WSe2 vs MoSe2) transferred on silicon nanoresonators with various designs (planarized vs nonplanarized), we experimentally separate the different physical mechanisms that govern the global light emission enhancement. For WSe2 and MoSe2, we address the effects of Mie resonances and strain in the monolayer. For WSe2, an important additional contribution comes from out-of-plane exciton dipoles. This paves the way for more targeted designs of TMD-Si nanoresonator structures for room-temperature applications.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsphotonics.0c01175?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsphotonics.0c01175</a>.Raman mappings of WSe2 monolayers transferred on nonplanarized (under strain) and planarized (strain-free) nanoantennas are shown in Figures S1 and S3, respectively. Figure S2 presents the photoluminescence mapping of a MoSe2 monolayer on nonplanarizd nanoantenna as a function of the excitation laser polarization (<a class="ext-link" href="/doi/suppl/10.1021/acsphotonics.0c01175/suppl_file/ph0c01175_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

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