Abstract:The formation of moiré patterns in crystalline solids can be used to manipulate their electronic properties, which are fundamentally influenced by periodic potential landscapes. In two-dimensional materials, a moiré pattern with a superlattice potential can be formed by vertically stacking two layered materials with a twist and/or a difference in lattice constant. This approach has led to electronic phenomena including the fractal quantum Hall effect1–3, tunable Mott insulators4,5 and unconventional superconductivity6. In addition, theory predicts that notable effects on optical excitations could result from a moiré potential in two-dimensional valley semiconductors7–9, but these signatures have not been detected experimentally. Here we report experimental evidence of interlayer valley excitons trapped in a moiré potential in molybdenum diselenide (MoSe2)/tungsten diselenide (WSe2) heterobilayers. At low temperatures, we observe photoluminescence close to the free interlayer exciton energy but with linewidths over one hundred times narrower (around 100 microelectronvolts). The emitter g-factors are homogeneous across the same sample and take only two values, −15.9 and 6.7, in samples with approximate twist angles of 60 degrees and 0 degrees, respectively. The g-factors match those of the free interlayer exciton, which is determined by one of two possible valley-pairing configurations. At twist angles of approximately 20 degrees the emitters become two orders of magnitude dimmer; however, they possess the same g-factor as the heterobilayer at a twist angle of approximately 60 degrees. This is consistent with the umklapp recombination of interlayer excitons near the commensurate 21.8-degree twist angle7. The emitters exhibit strong circular polarization of the same helicity for a given twist angle, which suggests that the trapping potential retains three-fold rotational symmetry. Together with a characteristic dependence on power and excitation energy, these results suggest that the origin of the observed effects is interlayer excitons trapped in a smooth moiré potential with inherited valley-contrasting physics. This work presents opportunities to control two-dimensional moiré optics through variation of the twist angle.

Lasing of Moiré Trapped MoSe$_2$/WSe$_2$ Interlayer Excitons Coupled to a Nanocavity

Lasing of moiré trapped MoSe 2 /WSe 2 interlayer excitons coupled to a nanocavity

Optically Pumped Monolayer MoSe2 Excitonic Lasers from Whispering Gallery Mode Microcavities.

In-situ spontaneous emission control of MoSe$_2$-WSe$_2$ interlayer excitons with near-unity quantum yield

A room-temperature moir\'e interlayer exciton laser

Manipulating Moiré Excitons in Two-Dimensional Quantum Systems via Optical Microcavities

Moiré-engineered light-matter interactions in MoS 2 /WSe 2 heterobilayers at room temperature

Field-Induced Hybridization of Moiré Excitons in MoSe2/WS2 Heterobilayers

Field-Induced Hybridization of Moiré Excitons in MoSe_{2}/WS_{2} Heterobilayers.

Moiré-engineered light-matter interactions in MoS2/WSe2 heterobilayers at room temperature

Room Temperature Nanocavity Laser with Interlayer Excitons in 2D Heterostructures.

Field-Induced Hybridization of Moiré Excitons in Heterobilayers

Field-induced hybridization of moiré excitons in MoSe$_2$/WS$_2$ heterobilayers

Van der Waals heterostructure polaritons with moiré-induced nonlinearity

In-situ Spontaneous Emission Control of MoSe₂-WSe₂ Interlayer Excitons with High Quantum Yield

Exciton Superposition across Moiré States in a Semiconducting Moiré Superlattice

Moiré trions in MoSe2/WSe2 heterobilayers

Interlayer donor-acceptor pair excitons in MoSe 2 /WSe 2 moiré heterobilayer

Interlayer Donor-Acceptor Pair Excitons in MoSe2/WSe2 Moiré Heterobilayer

Optical Microcavity‐Induced Moiré Exciton Localization in Twisted WSe2 Homobilayer

Signatures of moiré-trapped valley excitons in MoSe2/WSe2 heterobilayers