Abstract:Transition metal dichalcogenides (TMDs) have attracted a great deal of attention for potential applications in a variety of areas including integrated optoelectronic devices. Most of TMDs transform from indirect to direct band-gap semiconductors when their thickness is reduced to a monolayer. Therefore, monolayer TMDs could serve as efficient optical gain materials, especially for making nanolasers with the smallest possible volume of active medium. Such lasers with small gain media could be important as light sources for integrated photonics for future on-chip interconnects, where extreme low energy consumption is required. Furthermore, the large exciton binding energy in monolayer TMDs exceeding 0.5 eV makes them important as potential candidate for exciton lasers at room temperature. So far, lasers based on monolayer TMDs have been reported at cryogenic temperatures, employing a monolayer WSe2 coupled onto a GaP photonic-crystal cavity, or a monolayer WS2 with a Si3N4 micro-disk. One of the possible reasons for the low temperature operation is the low Q-cavity as a result of the choices of cavity materials and structures and the associated fabrication precision. Here, we demonstrate the first room-temperature operation of a nanolaser using a monolayer molybdenum ditelluride nanolaser combined with a silicon nanobeam cavity. Lasing operation at 1132 nm is supported by the exciton emission with a linewidth of 0.202 nm and a Q factor of 5605. The room temperature operation shows the feasibility of TMDs nanolaser towards practical application. In addition, the silicon nanobeam cavity would make such 2D-based lasers more attractive for silicon photonics integration.

Room temperature operation of silicon nanobeam laser based on exciton emission of 2D monolayer MoTe2 (Conference Presentation)

Room-temperature Continuous-wave Lasing from Monolayer Molybdenum Ditelluride with a Silicon Nanobeam Cavity

Room-temperature Continuous-Wave Lasing from Monolayer Molybdenum Ditelluride Integrated with a Silicon Nanobeam Cavity.

Room Temperature Nanocavity Laser with Interlayer Excitons in 2D Heterostructures.

Optically Pumped Monolayer MoSe2 Excitonic Lasers from Whispering Gallery Mode Microcavities.

1305 nm MoTe2-on-silicon Laser

1305 Nm Few‐Layer MoTe2‐on‐Silicon Laser‐Like Emission

A room-temperature moir\'e interlayer exciton laser

1305 Nm Few‐Layer MoTe2‐on‐Silicon Laser‐Like Emission (laser Photonics Rev. 12(6)/2018)

Laser‐Like Emission from a Sandwiched MoTe2 Heterostructure on a Silicon Single‐Mode Resonator

Robust Light‐Emitting Devices: Laser‐Like Emission from a Sandwiched MoTe2 Heterostructure on a Silicon Single‐Mode Resonator (advanced Optical Materials 20/2019)

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Tutorial on Semiconductor Nanolasers: from Metallic Cavities to 2D Transition Metal Dichalcogenide Gain Materials (conference Presentation)

Monolayer Tungsten Disulfide Laser

Material-realistic modelling of quantum many-body effects in a monolayer TMDC nanolaser device

High-Temperature Continuous-Wave Pumped Lasing from Large-Area Monolayer Semiconductors Grown by Chemical Vapor Deposition.

Room Temperature Terahertz Electroabsorption Modulation by Excitons in Monolayer Transition Metal Dichalcogenides

Room Temperature Operation of 2-Μm Microchip Tm,Ho:Lu2SiO5 Laser

Laterally confined photonic crystal surface emitting laser based on monolayer tungsten disulfide operating at room temperature

An silicon nanocrystal laser

Laterally confined photonic crystal surface emitting laser incorporating monolayer tungsten disulfide