Abstract:The achievement of electrically-pumped laser diodes at the micro/nanoscale levels is anticipated to feature an indispensable role in future photonic integrated circuits. However, the conventional p–n junction device architectures are inefficient due to serious optical and electrical losses. Herein, an electrically-injected whispering-gallery-mode (WGM) microlaser diode, which contained an n-AlGaN electron-injection layer, a ZnO microwire doped with a Ga impurity (ZnO:Ga MW), a Pt nanolayer, a MgO nanolayer and a p-GaN substrate as a hole supplier, was fabricated and systematically investigated. In practice, upon continuous-wave operation of electrical pumping at ambient temperature, the well-designed n-AlGaN/n-ZnO:Ga MW/Pt/MgO/p-GaN device exhibits remarkable double-heterojunction (n–n–p) characteristics, enabling lasing in the ultraviolet spectral region, accompanied by efficient suppression of spontaneous radiation. Furthermore, the device exhibits fascinating properties, with a threshold as low as 12.5 mA and a high quality ( Q )-factor of approximately 1943. The carefully-designed double heterostructure enables superinjection of current, as well as efficient confinement of injected carriers and photons. In this case, the electron–hole recombination, light-emission/lasing region, and population-inversion zones coincide, and are mainly concentrated in the ZnO:Ga MW active region, thereby achieving the required population inversion at relatively low current-injection levels. Such a methodical design and construction of a double-heterojunction microlaser device could bring new technological opportunities to realize high-performance lasers with a low threshold, high Q -factor, distinct multiple modes, and efficient suppression of spontaneous radiation driven by electrical current.

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Hybrid Structure Microlaser Based on a Nanowire and a Silica Microdisk Cavity

Single Mode Lasing in Coupled Nanowires

Hybrid Photon-Plasmon Nanowire Lasers

Low-Threshold Microlaser in Er : Yb Phosphate Glass Coated Microsphere

Hybrid Structure Laser Based on Semiconductor Nanowires and a Silica Microfiber Knot Cavity

Single-mode Nanolasers Based on FP-WGM Hybrid Cavity Coupling.

Coherent mode-combined ultra-narrow-linewidth single-mode micro-disk laser

Low-threshold Whispering-Gallery-mode Microlasers Fabricated in a Nd:glass Substrate by Three-Dimensional Femtosecond Laser Micromachining.

Compact hybrid laser based on semiconductor nanowires and a silica biconical fiber

Toward On-Chip Unidirectional and Single-Mode Polymer Microlaser

Single-nanowire single-mode laser.

On-chip single-mode CdS nanowire laser

Ultralow‐Threshold and High‐Quality Whispering‐Gallery‐Mode Lasing from Colloidal Core/Hybrid‐Shell Quantum Wells

Low-threshold miniaturized core-shell GaAs/InGaAs nanowire/quantum-dot hybrid structure nanolasers

Electrically driven compact hybrid lithium niobate microring laser

Nanowires/Microfiber Hybrid Structure Multicolor Laser

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Ultralow-threshold Neodymium-Doped Microsphere Lasers on a Silicon Chip

An electrically-pumped WGM microlaser realized in an n-AlGaN/n-ZnO:Ga microwire/Pt/MgO/p-GaN double-heterojunction device

A whispering-gallery-mode microlaser based on dual erbium-doped microspheres