Hybrid Structure Microlaser Based on a Nanowire and a Silica Microdisk Cavity

Guanzhong Wang,Xiaoshun Jiang,Mingxiao Zhao,Ma, Yaoguang

DOI: https://doi.org/10.1109/oecc.2012.6276454

2012-01-01

Abstract:We demonstrate a hybrid structure microlaser consisting of a single CdSe nanowire attached to a silica microdisk cavity. Lasing threshold of the hybrid structure lower than 12 nJ/pulse is observed.

What problem does this paper attempt to address?

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Guanzhong Wang,Xiaoshun Jiang,Mingxiao Zhao,Yaoguang Ma,Huibo Fan,Qing Yang,Limin Tong,Min Xiao

DOI: https://doi.org/10.1364/OE.20.029472

IF: 3.8

2012-01-01

Optics Express

Abstract:We experimentally demonstrate a hybrid structure microlaser on chip with a single CdSe nanowire attached to a high-Q silica microdisk cavity at room temperature. When pumped by a 532 nm pulse laser, both single-longitudinal mode and multi-longitudinal mode lasers with linewidth of 0.18 nm are obtained from the hybrid structure with a 58-mu m-diameter microdisk and a 250-nm diameter nanowire. The measured lasing threshold of the microlaser is as low as 100 mu J/cm(2). (C) 2012 Optical Society of America
Hybrid Structure Laser Based on Semiconductor Nanowires and a Silica Microfiber Knot Cavity

Qing Yang,Xiaoshun Jiang,Xin Guo,Yuan Chen,Limin Tong

DOI: https://doi.org/10.1063/1.3093821

IF: 4

2009-01-01

Applied Physics Letters

Abstract:We demonstrate a hybrid structure laser consisting of a single or multiple zinc oxide (ZnO)nanowires attached to a silica microfiber knot cavity, which is pumped by 355 nm wavelength laser pulses. The laser threshold is lower than 0.2 μ J / pulse . The measured linewidth of the lasing mode is about 0.04 nm. The hybrid structure combines advantages of high gain of semiconductornanowires and high quality factor of microfiber knot cavities. Additionally, the design offers convenient and efficient approach to both pumping and collection of the semiconductornanowire lasers.
Single Mode Lasing in Coupled Nanowires

Yao Xiao,Chao Meng,Xiaoqin Wu,Limin Tong

DOI: https://doi.org/10.1063/1.3610965

IF: 4

2011-01-01

Applied Physics Letters

Abstract:We demonstrate single mode lasing in coupled CdSe nanowires. By coupling two 420 nm diameter CdSe nanowires to form an X-structure cavity, single-mode lasing emission around 734.3 nm is obtained with line width of 0.11 nm and lasing threshold of about 120 μJ/cm2. Mode selection in the lasing nanowire is realized via Vernier effect in the coupled cavities. Our results suggest a simple approach to single-mode nanowire lasers.
Hybrid Photon-Plasmon Nanowire Lasers

Xiaoqin Wu,Yao Xiao,C. Z. Ning,Limin Tong

DOI: https://doi.org/10.1021/nl403325j

IF: 10.8

2013-01-01

Nano Letters

Abstract:Metallic and plasmonic nanolasers have attracted growing interest recently. Plasmonic lasers demonstrated so far operate in hybrid photon-plasmon modes in transverse dimensions, rendering it impossible to separate photonic from plasmonic components. Thus only the far-field photonic component can be measured and utilized directly. But spatially separated plasmon modes are highly desired for applications including high-efficiency coupling of single-photon emitters and ultrasensitivity optical sensing. Here, we report a nanowire (NW) laser that offers subdiffraction-limited beam size and spatially separated plasmon cavity modes. By near-field coupling a high-gain CdSe NW and a 100 nm diameter Ag NW, we demonstrate a hybrid photon-plasmon laser operating at 723 nm wavelength at room temperature, with a plasmon mode area of 0.008λ(2). This device simultaneously provides spatially separated photonic far-field output and highly localized coherent plasmon modes, which may open up new avenues in the fields of integrated nanophotonic circuits, biosensing, and quantum information processing.
Compact hybrid laser based on semiconductor nanowires and a silica biconical fiber

Ding, Ye,Guo, Xin,Guanzhong Wang,Tong, Limin,Qing Yang

DOI: https://doi.org/10.1364/acp.2009.tud4

2009-01-01

Abstract:We demonstrate a hybrid laser consisting of zinc oxide (ZnO) nanowires attached to the waist of a silica biconical fiber, which is pumped by 355 nm wavelength laser pulses. The laser threshold is lower than 0.1 µJ/pulse. The full-width at half-maximum (FWHM) of the cavity mode is about 0.7 nm, indicating a quality factor of about 560. The design offers convenient, efficient and compact approach to both pumping and collection of the semiconductor nanowire lasers, which represents a significant step toward high-density integration of functional building blocks for an ultracompact nanophotonic circuit.
Single-mode Nanolasers Based on FP-WGM Hybrid Cavity Coupling.

Salman Ullah,Minghua Zhuge,Liang Zhang,Xiang Fu,Yaoguang Ma,Qing Yang

DOI: https://doi.org/10.1088/1361-6528/ad28d4

IF: 3.5

2024-01-01

Nanotechnology

Abstract:As an idealized light source, semiconductor nanowire (NW) lasers have been extensively studied due to its potential applications in many fields such as optoelectronics, nanophononics, optical communication, signal processing, and displays. In this letter, we proposed a novel approach to realize a single-mode nanolaser by forming an Fabry-Perot whispering gallery mode (FP-WGM) hybrid nanocavity between two cross-contact CdS NWs, i.e. x and y-NW. In our method, x-NW supports the regular FP oscillation in the axis direction while the cross section of y-NW provides a ultrasmall WGM nanocavity with a higher Q-factor and mode election which confirms the specific single mode can be excited. Experimentally, single-mode lasing emission centered at 517 nm was obtained with full width at half maximum of 0.08 nm and lasing threshold of similar to 50 kW cm-2. The suggested designing skills projected a general strategy for lasing mode regulation and single-mode realization. The single-mode low-threshold lasing strategy in coupled NWs may open a new avenue for practical applications of NW lasers and further trigger other photonic devices at a visible range.
Low-threshold Whispering-Gallery-mode Microlasers Fabricated in a Nd:glass Substrate by Three-Dimensional Femtosecond Laser Micromachining.

Jintian Lin,Yingxin Xu,Jiangxin Song,Bin Zeng,Fei He,Huailiang Xu,Koji Sugioka,Wei Fang,Ya Cheng

DOI: https://doi.org/10.1364/ol.38.001458

IF: 3.6

2013-01-01

Optics Letters

Abstract:We report on fabrication of whispering-gallery-mode microlasers in a Nd:glass chip by femtosecond laser three-dimensional micromachining. The main fabrication procedures include the fabrication of freestanding microdisks supported by thin pillars by femtosecond laser ablation of the glass substrate immersed in water, followed by CO2 laser annealing for surface smoothing. The quality (Q) factor of the fabricated microcavity is measured to be 1.065×10(6). Lasing is observed at a pump threshold as low as ~69 μW at room temperature with a continuous-wave laser diode operating at 780 nm. This technique allows for fabrication of microcavities of high Q factors in various dielectric materials, such as glasses and crystals.
1.9 μm hybrid silicon/iii-v semiconductor laser

po dong,t c hu,leiqi zhang,m dinu,r f kopf,atsushi tate,l l buhl,d t neilson,xiaohua luo,tsungyang liow,guoqiang lo,yenkuang chen

DOI: https://doi.org/10.1049/el.2013.0674

2013-01-01

Electronics Letters

Abstract:A 1.9 μm hybrid silicon/III-V laser based on a wafer bonding technique is reported. The gain materials are InGaAs multiple quantum wells grown on InP substrate, with strain compensation between barriers and wells. The III-V wafer is bonded to a silicon-on-insulator wafer with processed silicon waveguides and transition tapers. Laser emission with a threshold current of 95 mA at room temperature and 45 mA at 5 °C is demonstrated.
Low-threshold miniaturized core-shell GaAs/InGaAs nanowire/quantum-dot hybrid structure nanolasers

Yi Li,Xin Yan,Xia Zhang,Chao Wu,Jiahui Zheng,Chaofei Zha,Tianyang Fu,Li Gong,Xiaomin Ren

DOI: https://doi.org/10.1016/j.optlastec.2022.108150

2022-08-01

Abstract:A core-shell GaAs/InGaAs nanowire/quantum dot hybrid structure nanolaser is proposed and studied by the finite-difference time-domain method. The results show that the coupled nanowire cavity-emitter system enables enhancement of the spontaneous radiation rate of quantum dots, resulting in a high Purcell factor of 15.5 at a diameter of 330 nm. Due to the quantum confinement and reduced propagation loss, the hybrid structure laser exhibits a threshold lower by 1–2 magnitudes than that of the pure nanowire laser. In addition, by incorporating multiple quantum dots, the lasing intensity is significantly enhanced at the expense of threshold. This work may pave the way for the development of ultra-small low-consumption near infrared lasers and related microsystems.

optics,physics, applied
Single-nanowire single-mode laser.

Yao Xiao,Chao Meng,Pan Wang,Yu Ye,Huakang Yu,Shanshan Wang,Fuxing Gu,Lun Dai,Limin Tong

DOI: https://doi.org/10.1021/nl1040308

IF: 10.8

2011-01-01

Nano Letters

Abstract:We demonstrate single-mode laser emission in single nanowires. By folding a 200 nm diameter CdSe nanowire to form loop mirrors, single-mode laser emission around 738 nm wavelength is obtained with line width of 0.12 nm and low threshold. The mode selection is realized by the vernier effect of coupled cavities in the folded nanowire. In addition, the loop structure makes it possible to tune the nanowire cavity, opening an opportunity to realize a tunable single-mode nanowire laser.
Nanowires/Microfiber Hybrid Structure Multicolor Laser

Ye Ding,Qing Yang,Xin Guo,Shanshan Wang,Fuxing Gu,Jian Fu,Qing Wan,Jipeng Cheng,Limin Tong

DOI: https://doi.org/10.1364/oe.17.021813

IF: 3.8

2009-01-01

Optics Express

Abstract:We demonstrate a compact hybrid structure red-green-ultraviolet three-color laser consisting of three distinct semiconductor nanowires (CdSe, CdS and ZnO) attached to a silica microfiber, which is pumped by 355 nm wavelength laser pulses. The exciting of the nanowires and the collection of the photoluminescence (PL) are implemented by means of evanescent coupling through the same silica microfiber. When pump energy higher than 1.3 microJ, three spatially and spectrally distinct lasing groups can be measured at the same output port simultaneously. The approach can be extended to other materials to produce hybrid lasers that cover ultraviolet to near infrared spectral regions.
On-chip single-mode CdS nanowire laser

Qingyang Bao,Weijia Li,Peizhen Xu,Ming Zhang,Daoxin Dai,Pan Wang,Xin Guo,Limin Tong

DOI: https://doi.org/10.1038/s41377-020-0277-0

2020-03-16

Light: Science and Applications

Abstract:Abstract By integrating a free-standing cadmium sulfide (CdS) nanowire onto a silicon nitride (SiN) photonic chip, we demonstrate a highly compact on-chip single-mode CdS nanowire laser. The mode selection is realized using a Mach-Zehnder interferometer (MZI) structure. When the pumping intensity exceeds the lasing threshold of 4.9 kW/cm 2 , on-chip single-mode lasing at ~518.9 nm is achieved with a linewidth of 0.1 nm and a side-mode suppression ratio of up to a factor of 20 (13 dB). The output of the nanowire laser is channelled into an on-chip SiN waveguide with high efficiency (up to 58%) by evanescent coupling, and the directional coupling ratio between the two output ports can be varied from 90 to 10% by predesigning the coupling length of the SiN waveguide. Our results open new opportunities for both nanowire photonic devices and on-chip light sources and may pave the way towards a new category of hybrid nanolasers for chip-integrated applications.
Ultralow‐Threshold and High‐Quality Whispering‐Gallery‐Mode Lasing from Colloidal Core/Hybrid‐Shell Quantum Wells

Rui Duan,Zitong Zhang,Lian Xiao,Xiaoxu Zhao,Yi Tian Thung,Lu Ding,Zheng Liu,Jun Yang,Van Duong Ta,Handong Sun

DOI: https://doi.org/10.1002/adma.202108884

IF: 29.4

2022-01-28

Advanced Materials

Abstract:The realization of efficient on-chip microlasers with scalable fabrication, ultralow threshold, and stable single-frequency operation is always desired for a wide range of miniaturized photonic systems. Herein, an effective way to fabricate nanostructures- whispering-gallery-mode (WGM) lasers by drop-casting CdSe/CdS@Cd1- x Znx S core/buffer-shell@graded-shell nanoplatelets (NPLs) dispersion onto silica microspheres is presented. Benefiting from the excellent gain properties from the interface engineered core/hybrid shell NPLs and high-quality factor WGM resonator from excellent optical field confinement, the proposed room-temperature NPLs-WGM microlasers show a record-low lasing threshold of 3.26 µJ cm-2 under nanosecond laser pumping among all colloidal NPLs-based lasing demonstrations. The presence of sharp discrete transverse electric- and magnetic-mode spikes, the inversely proportional dependence of the free spectra range on microsphere sizes and the polarization anisotropy of laser output represent the first direct experimental evidence for NPLs-WGM lasing nature, which is verified theoretically by the computed electric-field distribution inside the microcavity. Remarkably, a stable single-mode lasing output with an ultralow lasing threshold of 3.84 µJ cm-2 is achieved by the Vernier effect through evanescent field coupling. The results highlight the significance of interface engineering on the optimization of gain properties of heterostructured nanomaterials and shed light on developing future miniaturized tunable coherent light sources.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Freestanding Nanowire Ring Laser

Zhifang Hu,Xin Guo,Limin Tong

DOI: https://doi.org/10.1063/1.4827251

IF: 4

2013-01-01

Applied Physics Letters

Abstract:We demonstrate a freestanding nanowire ring laser, assembled by splicing the two ends of a CdS nanowire via a dissolved polymer nanowire. With ring diameter of less than 50 μm, the free-standing nanowire ring laser shows low lasing threshold, high robustness, and excellent mechanical flexibility. Also, the nanowire ring laser works well in liquid environment, showing the possibility of integrating the nano-ring laser into an optofluidic system.
An electrically-pumped WGM microlaser realized in an n-AlGaN/n-ZnO:Ga microwire/Pt/MgO/p-GaN double-heterojunction device

Kai Xu,Peng Wan,Maosheng Liu,Daning Shi,Caixia Kan,Mingming Jiang

DOI: https://doi.org/10.1039/d4tc03377a/v1/review2

IF: 6.4

2024-10-07

Journal of Materials Chemistry C

Abstract:The achievement of electrically-pumped laser diodes at the micro/nanoscale levels is anticipated to feature an indispensable role in future photonic integrated circuits. However, the conventional p–n junction device architectures are inefficient due to serious optical and electrical losses. Herein, an electrically-injected whispering-gallery-mode (WGM) microlaser diode, which contained an n-AlGaN electron-injection layer, a ZnO microwire doped with a Ga impurity (ZnO:Ga MW), a Pt nanolayer, a MgO nanolayer and a p-GaN substrate as a hole supplier, was fabricated and systematically investigated. In practice, upon continuous-wave operation of electrical pumping at ambient temperature, the well-designed n-AlGaN/n-ZnO:Ga MW/Pt/MgO/p-GaN device exhibits remarkable double-heterojunction (n–n–p) characteristics, enabling lasing in the ultraviolet spectral region, accompanied by efficient suppression of spontaneous radiation. Furthermore, the device exhibits fascinating properties, with a threshold as low as 12.5 mA and a high quality ( Q )-factor of approximately 1943. The carefully-designed double heterostructure enables superinjection of current, as well as efficient confinement of injected carriers and photons. In this case, the electron–hole recombination, light-emission/lasing region, and population-inversion zones coincide, and are mainly concentrated in the ZnO:Ga MW active region, thereby achieving the required population inversion at relatively low current-injection levels. Such a methodical design and construction of a double-heterojunction microlaser device could bring new technological opportunities to realize high-performance lasers with a low threshold, high Q -factor, distinct multiple modes, and efficient suppression of spontaneous radiation driven by electrical current.

materials science, multidisciplinary,physics, applied
Electrically driven compact hybrid lithium niobate microring laser

Junxia Zhou,Ting Huang,Zhiwei Fang,Rongbo Wu,Yuan Zhou,Jian Liu,Haisu Zhang,Zhenhua Wang,Min Wang,Ya Cheng

DOI: https://doi.org/10.1364/OL.474906

2022-09-04

Abstract:We demonstrate an electrically driven compact hybrid lithium niobate microring laser by butt coupling a commercial 980-nm pump laser diode chip with a high quality Er3+-doped lithium niobate microring chip. Single mode lasing emission at 1531 nm wavelength from the Er3+-doped lithium niobate microring can be observed with the integrated 980-nm laser pumping. The compact hybrid lithium niobate microring laser occupies the chip size of 3 mmx4mmx0.5 mm. The threshold pumping laser power is 6 mW and the threshold current is 0.5 A (operating voltage 1.64 V) in the atmospheric temperature. The spectrum featuring single mode lasing with small linewidth of 0.05 nm is observed. This work explores a robust hybrid lithium niobate microring laser source which has potential applications in coherent optical communication and precision metrology.

Optics
Monolayer semiconductor nanocavity lasers with ultralow thresholds

Sanfeng Wu,Sonia Buckley,John R Schaibley,Liefeng Feng,Jiaqiang Yan,David G Mandrus,Fariba Hatami,Wang Yao,Jelena Vučković,Arka Majumdar,Xiaodong Xu

DOI: https://doi.org/10.1038/nature14290

IF: 64.8

2015-04-02

Nature

Abstract:Engineering the electromagnetic environment of a nanometre-scale light emitter by use of a photonic cavity can significantly enhance its spontaneous emission rate, through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter, providing a low-threshold laser system with small footprint, low power consumption and ultrafast modulation. An ultralow-threshold nanoscale laser has been successfully developed by embedding quantum dots into a photonic crystal cavity (PCC). However, several challenges impede the practical application of this architecture, including the random positions and compositional fluctuations of the dots, extreme difficulty in current injection, and lack of compatibility with electronic circuits. Here we report a new lasing strategy: an atomically thin crystalline semiconductor--that is, a tungsten diselenide monolayer--is non-destructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PCC. A continuous-wave nanolaser operating in the visible regime is thereby achieved with an optical pumping threshold as low as 27 nanowatts at 130 kelvin, similar to the value achieved in quantum-dot PCC lasers. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within one nanometre of the PCC surface. The surface-gain geometry gives unprecedented accessibility and hence the ability to tailor gain properties via external controls such as electrostatic gating and current injection, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.
Ultra-Low Threshold Monolayer Semiconductor Nanocavity Lasers

Sanfeng Wu,Sonia Buckley,John R. Schaibley,Liefeng Feng,Jiaqiang Yan,David G. Mandrus,Fariba Hatami,Wang Yao,Jelena Vuckovic,Arka Majumdar,Xiaodong Xu

DOI: https://doi.org/10.48550/arXiv.1502.01973

2015-02-07

Abstract:Engineering the electromagnetic environment of a nanoscale light emitter by a photonic cavity can significantly enhance its spontaneous emission rate through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter, providing the ultimate low-threshold laser system with small footprint, low power consumption and ultrafast modulation. A state-of-the-art ultra-low threshold nanolaser has been successfully developed though embedding quantum dots into photonic crystal cavity (PhCC). However, several core challenges impede the practical applications of this architecture, including the random positions and compositional fluctuations of the dots, extreme difficulty in current injection, and lack of compatibility with electronic circuits. Here, we report a new strategy to lase, where atomically thin crystalline semiconductor, i.e., a tungsten-diselenide (WSe2) monolayer, is nondestructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PhCC. A new type of continuous-wave nanolaser operating in the visible regime is achieved with an optical pumping threshold as low as 27 nW at 130 K, similar to the value achieved in quantum dot PhCC lasers. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within 1 nm of the PhCC surface. The surface-gain geometry allows unprecedented accessibilities to multi-functionalize the gain, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.

Mesoscale and Nanoscale Physics,Materials Science
Electrically-pumped WGM microlaser realized in n-AlGaN/n-ZnO:Ga microwire/Pt/MgO/p-GaN double heterojunction device

Mingming Jiang,Kai Xu,Peng Wan,Maosheng Liu,Daning Shi,Caixia Kan

DOI: https://doi.org/10.1039/d4tc03377a

IF: 6.4

2024-09-19

Journal of Materials Chemistry C

Abstract:The achievement of electrically-pumped laser diodes at the micro/nanoscale levels is anticipated to feature an indispensable role in future photonic integrated circuits. However, the conventional p-n junction device architectures are not efficient due to serious optical and electrical losses. Herein, an electrically-injected whispering-gallery mode (WGM) microlaser diode based on n-AlGaN/n-ZnO:Ga microwire/Pt/MgO/p-GaN double heterostructure was fabricated and systematically investigated. In practice, upon continuous-wave operation of electrical pumping at ambient temperature, the proposed device exhibits remarkable double heterojunction (n-n-p) characteristics, enabling it to lasing in the ultraviolet spectral region, accompanied by an efficient suppression of spontaneous radiation. Furthermore, the device exhibits fascinating properties with a threshold as low as 12.5 mA, and a high quality ( )-factor of approximately 1943. The carefully-designed double heterojunction enables superinjection of current, companied with efficient confinement of injected carriers and photons. In this case, the electron-hole recombination, lasing region, and population inversion zones coincide, which are mainly concentrated in the ZnO:Ga MW active region, thereby achieving the required population inversion at relatively low current-injection levels. Such a methodical design and construction of a double heterojunction microlaser device could bring new technological opportunities to realize a high-performance lasers with low-threshold current, high -factor, distinct multiple-mode, and efficient suppression of spontaneous radiation driven by electrical excitation.

materials science, multidisciplinary,physics, applied
Direct‐Bandgap Bilayer WSe 2 /Microsphere Monolithic Cavity for Low‐Threshold Lasing

Jia‐Xin Yu,Shuai Xing,Guang‐Yu Dai,Shuang‐Yi Ling‐Hu,Fu‐Xing Gu

DOI: https://doi.org/10.1002/adma.202106502

IF: 29.4

2021-11-17

Advanced Materials

Abstract:Monolayer transition metal dichalcogenides (TMDs) have emerged as widely accepted 2D gain materials in the field of light sources owing to their direct bandgap and high photoluminescence quantum yield. However, the monolayer medium suffers from weak emission because only a single layer of molecules can absorb the pump energy. Moreover, the material degradation when transferring these fragile materials hinders their cooperation with the optical cavity further. In this study, for the first time, a high-quality monolithic structure is developed by directly growing single-domain tungsten diselenide (WSe2 ) bilayers on single silica microsphere (MS) cavities. Such a completely wrapped structure guides the indirect-to-direct bandgap transition of WSe2 bilayers, leading to a significantly improved photoluminescence intensity by about 60-fold. Moreover, the high-quality monolithic structure enhances the confinement factor of the cavity by more than 20-fold. Based on the above advantages, a bilayer WSe2 /MS microlaser is realized with an ultralow threshold of 0.72 W cm-2 , nearly an order of magnitude lower than the existing records. The results demonstrate the possibility of using multilayer TMD materials as 2D gain media and provide insights into a new ultracompact monolithic platform of TMD material/cavity for lasing devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

Hybrid Structure Microlaser Based on a Nanowire and a Silica Microdisk Cavity

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Hybrid Structure Laser Based on Semiconductor Nanowires and a Silica Microfiber Knot Cavity

Single Mode Lasing in Coupled Nanowires

Hybrid Photon-Plasmon Nanowire Lasers

Compact hybrid laser based on semiconductor nanowires and a silica biconical fiber

Single-mode Nanolasers Based on FP-WGM Hybrid Cavity Coupling.

Low-threshold Whispering-Gallery-mode Microlasers Fabricated in a Nd:glass Substrate by Three-Dimensional Femtosecond Laser Micromachining.

1.9 μm hybrid silicon/iii-v semiconductor laser

Low-threshold miniaturized core-shell GaAs/InGaAs nanowire/quantum-dot hybrid structure nanolasers

Single-nanowire single-mode laser.

Nanowires/Microfiber Hybrid Structure Multicolor Laser

On-chip single-mode CdS nanowire laser

Ultralow‐Threshold and High‐Quality Whispering‐Gallery‐Mode Lasing from Colloidal Core/Hybrid‐Shell Quantum Wells

Freestanding Nanowire Ring Laser

An electrically-pumped WGM microlaser realized in an n-AlGaN/n-ZnO:Ga microwire/Pt/MgO/p-GaN double-heterojunction device

Electrically driven compact hybrid lithium niobate microring laser

Monolayer semiconductor nanocavity lasers with ultralow thresholds

Ultra-Low Threshold Monolayer Semiconductor Nanocavity Lasers

Electrically-pumped WGM microlaser realized in n-AlGaN/n-ZnO:Ga microwire/Pt/MgO/p-GaN double heterojunction device

Direct‐Bandgap Bilayer WSe 2 /Microsphere Monolithic Cavity for Low‐Threshold Lasing