Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

1.9 μm hybrid silicon/iii-v semiconductor laser

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Hybrid integrated InGaAsP-Si laser using selective area metal bonding method for optical interconnection

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

A Hybrid Single-Mode Laser Based on Slotted Silicon Waveguides

Bonding Ingaasp/Ito/Si Hybrid Laser with Ito As Cathode and Light-Coupling Material

IaAsP/InGaAsP quantum-well 1.3 μm vertical-cavity surface-emitting lasers

Compact hybrid laser based on semiconductor nanowires and a silica biconical fiber

Novel integration technique for silicon/III-V hybrid laser

Hybrid Structure Laser Based on Semiconductor Nanowires and a Silica Microfiber Knot Cavity

Hybrid InGaAsP-Si Evanescent Laser by Selective-Area Metal-Bonding Method

Tunable Quantum Dot Lasers Grown Directly on Silicon

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

Optically Pumped Mid-Infrared Light Emitter on Silicon

Compact, Hybrid III-V/Silicon Vernier Laser Diode Operating From 1955–1992 nm

Compact, Hybrid III-V/Silicon Vernier Laser Diode Operating from 1955–1992 Nm

Wavelength Tunable Cavity Mirror for Silicon Micro-Ring-Based Hybrid Integrated Lasers

III–V/Si Hybrid Laser Array with DBR on Si Waveguide*

High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon