Abstract:Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic integration of III-V lasers and silicon photonic components on single silicon wafer is recognized as a long-standing obstacle for ultra-dense photonic integration, which can provide considerable economical, energy-efficient and foundry-scalable on-chip light sources, that has not been reported yet. Here, we demonstrate embedded InAs/GaAs quantum dot (QD) lasers directly grown on trenched silicon-on-insulator (SOI) substrate, enabling monolithic integration with butt-coupled silicon waveguides. By utilizing the patterned grating structures inside pre-defined SOI trenches and unique epitaxial method via hybrid molecular beam epitaxy (MBE), high-performance embedded InAs QD lasers with monolithically out-coupled silicon waveguide are achieved on such template. By resolving the epitaxy and fabrication challenges in such monolithic integrated architecture, embedded III-V lasers on SOI with continuous-wave lasing up to 85 °C are obtained. The maximum output power of 6.8 mW can be measured from the end tip of the butt-coupled silicon waveguides, with estimated coupling efficiency of approximately -6.7 dB. The results presented here provide a scalable and low-cost epitaxial method for the realization of on-chip light sources directly coupling to the silicon photonic components for future high-density photonic integration.

III–V/Si Hybrid Laser Array with DBR on Si Waveguide*

Heterogeneously Integrated Iii-V/Silicon Dual-Mode Distributed Feedback Laser Array for Terahertz Generation

1.9 μm hybrid silicon/iii-v semiconductor laser

4-Λ InGaAsP-Si Distributed Feedback Evanescent Lasers with Varying Silicon Waveguide Width.

Hybrid integrated InGaAsP-Si laser using selective area metal bonding method for optical interconnection

4–λ hybrid InGaAsP-Si evanescent laser array with low power consumption for on-chip optical interconnects

Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

Hybrid InGaAsP-Si Evanescent Laser by Selective-Area Metal-Bonding Method

Electrically-Pumped Continuous-Wave Quantum-Dot Distributed Feedback Laser Array on Silicon

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

1550-nm Evanescent Hybrid InGaAsP–Si Laser With Buried Ridge Stripe Structure

Monolithic Quantum-Dot Distributed Feedback Laser Array on Silicon

A Hybrid Single-Mode Laser Based on Slotted Silicon Waveguides

Wavelength Tunable Cavity Mirror for Silicon Micro-Ring-Based Hybrid Integrated Lasers

A Silicon Co-Integrated Light Source Module

Design of enlarged-asymmetric-power single-mode silicon evanescent lasers with asymmetric distributed feedback gratings

Hybrid vertical-cavity laser with lateral emission into a silicon waveguide

In‐Plane 1.5 Μm Distributed Feedback Lasers Selectively Grown on (001) SOI

High Speed Evanescent Quantum‐Dot Lasers on Si

Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding

Monolithic integration of embedded III-V lasers on SOI