Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

A Silicon Co-Integrated Light Source Module

1.9 μm hybrid silicon/iii-v semiconductor laser

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Optically Pumped Mid-Infrared Light Emitter on Silicon

Wavelength Tunable Cavity Mirror for Silicon Micro-Ring-Based Hybrid Integrated Lasers

Compact and Low Power Consumption Hybrid Integrated Wavelength Tunable Laser Module Using Silicon Waveguide Resonators

C and L Bands Wavelength Tunable Laser with Silicon Photonic-wire Waveguide Micro-ring Resonators

Monolithic integration of embedded III-V lasers on SOI

A Hybrid Single-Mode Laser Based on Slotted Silicon Waveguides

Full C and L Bands Wavelength Tunable Laser Module with Silicon Micro-Ring Resonators

Tunable Quantum Dot Lasers Grown Directly on Silicon

Hybrid integrated InGaAsP-Si laser using selective area metal bonding method for optical interconnection

Tunable V-Cavity Semiconductor Laser And Modules

Monolithic Integration of Tunable V-coupled-cavity Laser and Mach-Zehnder Modulator on Generic InP Platform

Monolithic Quantum Dot Discrete Mode Laser on SOI

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

Silicon-integrated short-wavelength hybrid-cavity VCSEL

Innovative Integration of Dual Quantum Cascade Lasers on Silicon Photonics Platform

GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line

III–V/Si Hybrid Laser Array with DBR on Si Waveguide*

A thulium-silicon hybrid microdisk laser