Abstract:A highly strained InGaAs quantum well (QW) vertical-cavity surface-emitting laser (VCSEL) with low threshold current density, high efficiency and output power emissions around 1130 nm was grown by MOCVD. Its static characteristics at room temperature and high operation temperature were studied in detail. The 7 μm oxide aperture device exhibits a threshold current of 0.68 mA, corresponding to a threshold current density of 1.7 kA/cm2. The slope efficiency is 0.43 W/A and the maximum output power is 3.3 mW. Continuous-wave (CW) operation in the 10–80 °C temperature range is observed. The slope efficiency is almost constant at 10–80 °C. The threshold current becomes lower at high temperatures thanks to the alignment between gain peak and cavity mode. The 3 μm oxide aperture device's lasing in single mode with the RMS spectral width of 0.163 nm and orthogonal polarization suppression ratio (OPSR) is ~15 dB at 25 °C. The small-signal response analysis indicates that reducing the parasitics of the device and refining the fabrication process will improve the dynamics response characteristics. These results indicate that the 1130 nm GaAs-based VCSEL with highly strained InGaAs QWs is expected to be used as source for silicon photonics.

Silicon-integrated short-wavelength hybrid-cavity VCSEL

Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELs by Direct Wafer-Bonding

Efficient Hybrid Integration of Long-Wavelength VCSELs on Silicon Photonic Circuits

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Submilliampare threshold 1.3 mu m vertical-cavity surface-emitting lasers

Submilliampare threshold 1.3μm vertical-cavity surface-emitting lasers

Hybrid vertical-cavity laser with lateral emission into a silicon waveguide

An InGaAs Vertical-Cavity Surface-Emitting Laser Emitting at 1130 nm for Silicon Photonics Application

Wavelength Tunable Cavity Mirror for Silicon Micro-Ring-Based Hybrid Integrated Lasers

Wavelength switchable semiconductor laser using half-wave V-coupled cavities.

Application of Buried Tunnel Junction in Long-Wavelength VCSEL Structure

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Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

1.55-μm VCSEL with polarization-independent HCG mirror on SOI

A Silicon Co-Integrated Light Source Module

GaAs/AlGaAs-Based 870-Nm-band Widely Tunable Edge-Emitting V-Cavity Laser

Low-threshold, single-transverse-mode, 940-nm vertical-cavity surface-emitting laser with a mode filter and half-wavelength cavity

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Room-temperature DBR-free VCSEL operation on an InGaN/GaN thin-film platform with a monolithic surface grating

Efficient single-mode oxide-confined GaAs VCSEL's emitting in the 850-nm wavelength regime

High-power InGaAs/GaAs VCSEL's Two-Dimension Arrays