Abstract:In this paper, we report monolithically integrated III-V quantum dot (QD) light-emitting sources on silicon substrates for silicon photonics. We describe the first practical InAs/GaAs QD lasers monolithically grown on an offcut silicon (001) substrate due to the realization of high quality III-V epilayers on silicon with low defect density, indicating that the large material dissimilarity between III-Vs and silicon is no longer a fundamental barrier limiting monolithic growth of III-V lasers on Si substrates. Although the use of offcut silicon substrates overcomes the antiphase boundary (APB) problem, it has the disadvantage of not being readily compatible with standard microelectronics fabrication, where wafers with on-axis silicon (001) substrates are used. We therefore report, to the best of our knowledge, the first electrically pumped continuous-wave (c.w.) InAs/GaAs QD lasers fabricated on on-axis GaAs/Si (001) substrates without any intermediate buffer layers. Based on the achievements described above, we move on to report the first study of post-fabrication and prototyping of various Si-based light emitting sources by utilizing the focused ion beam (FIB) technique, with the intention of expediting the progress toward large-scale and low-cost photonic integrated circuits monolithically integrated on a silicon platform. We compare two Si-based QD lasers with as-cleaved and FIB-made facets, and prove that FIB is a powerful tool to fabricate integrated lasers on silicon substrates. Using angled facet structures, which effectively reduce facet reflectivity, we demonstrate Si-based InAs/GaAs QD superluminescent light emitting diodes (SLDs) operating under c.w. conditions at room temperature for the first time. The work described represents significant advances towards the realization of a comprehensive silicon photonics technology.

Design and Analysis of 2-Μm InGaSb/GaSb Quantum Well Lasers Integrated Onto Silicon-on-Insulator (SOI) Waveguide Circuits Through an Al2O3 Bonding Layer

1.9 μm hybrid silicon/iii-v semiconductor laser

Monolithic integration of embedded III-V lasers on SOI

Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELs by Direct Wafer-Bonding

1.54 [micro Sign]m GaSb/AlGaSb Multi-Quantum-well Monolithic Laser at 77 K Grown on Miscut Si Substrate Using Interfacial Misfit Arrays

High Temperature Characteristics Of A 2 M Ingasb/Algaassb Passively Mode-Locked Quantum Well Laser

Monolithic Integration of III-V Quantum Dot Lasers and Silicon Waveguides on SOI Platforms

Monolithically Integrated Iii-Sb Diode Lasers on Si Using Interfacial Misfit Arrays.

GaAs/AlGaAs quantum cascade lasers

In‐Plane 1.5 Μm Distributed Feedback Lasers Selectively Grown on (001) SOI

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

High-performance 1.06-Μm InGaAs/GaAs Double-Quantum-well Semiconductor Lasers with Asymmetric Heterostructure Layers

Long-Wavelength Inas/Gaas Quantum-Dot Light Emitting Sources Monolithically Grown On Si Substrate

Monolithic Fabrication of Ingaas/Gaas/Algaas Multiple Wavelength Quantum Well Laser Diodes Via Impurity-Free Vacancy Disordering Quantum Well Intermixing

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

Hybrid integrated InGaAsP-Si laser using selective area metal bonding method for optical interconnection

Buried InGaAs/InP quantum wells selectively grown on SOI for lateral membrane laser diodes

Monolithic Integration of III-V Quantum Dot Lasers on SOI

Optimization of 1300 Nm Quantum Well Laser on GaAs Substrates

Device Characteristics of GaInSb/AlGaSb Quantum Well Lasers Monolithically Grown on GaAs Substrates by Using an Interfacial Misfit Array

Reliability enhancement of InGaAs/AlGaAs quantum-well lasers on on-axis Si (001) substrate