Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

Monolithic Fabrication of Ingaas/Gaas/Algaas Multiple Wavelength Quantum Well Laser Diodes Via Impurity-Free Vacancy Disordering Quantum Well Intermixing

Photonic integrated circuits fabricated using quantum well intermixing

Impurity-free vacancy disordering of quantum wells for fabrication of multiple wavelength laser arrays

Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELs by Direct Wafer-Bonding

Quantum Well Intermixing For The Realization Of Photonic Integrated Circuits

Multi-bandgap Photonic Materials and Devices Fabricated by UV-laser Induced Quantum Well Intermixing

Polarization Insensitive InGaAs/InGaAsP/InP Amplifiers Using Quantum Well Intermixing

Large bandgap shift by UV excimer laser induced quantum well intermixing for photonic integration

Quantum Well Intermixing of InGaAsP/InP Laser Structure by Sputtering Al2O3

UV Laser Induced Selective-Area Bandgap Engineering for Fabrication of InGaAsP/InP Laser Devices

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

Design and Analysis of 2-Μm InGaSb/GaSb Quantum Well Lasers Integrated Onto Silicon-on-Insulator (SOI) Waveguide Circuits Through an Al2O3 Bonding Layer

High-performance 1.06-Μm InGaAs/GaAs Double-Quantum-well Semiconductor Lasers with Asymmetric Heterostructure Layers

Photonic Integrated Circuits and Components Using Quantum Well Intermixing

Tunable Quantum Dot Lasers Grown Directly on Silicon

InGaAs/InGaAsP Diffused Quantum Wells Optical Amplifiers and Modulators

Bandgap Engineering Of Ingaasp/Inp Multiple Quantum Well Structure By Dielectric Sputtering

Photonic-integrated circuits and components using quantum well intermixing

Quantum-Well Intermixing For Optoelectronic Integration Using High-Energy Ion-Implantation

Monolithic integration of embedded III-V lasers on SOI

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon