Abstract:A technique, based on quantum well (QW) intermixing, has been developed for the post growth, spatially selective tuning of the QW bandgap in a semiconductor laser structure. High energy (MeV) ion implantation is used to create a large number of vacancies and interstitials in the device. During high temperature processing (rapid thermal annealing), these defects enhance the intermixing of the QW and the barrier materials while being annealed out, producing a blue shift of the QW bandgap. Increases in bandgap energy of greater than 100 nm at 1.55 mu m in InGaAs/lnGaAsP/InP structures can be achieved. Absorption spectroscopy in the waveguide geometry is used to quantify the losses in the structure. Using a simple masking scheme to spatially modify the defect concentration, different regions of a wafer can be blue shifted by different amounts. This allows the integration of many different devices such as lasers, detectors, modulators, amplifiers and waveguides on a single wafer using only a single, postgrowth processing step. The performance of both passive (waveguide) and active (laser and amplifier) devices produced using this technique will be described, as well as the practicality of this technique in the production of photonic integrated circuits.

Large bandgap shift by UV excimer laser induced quantum well intermixing for photonic integration

Multi-bandgap Photonic Materials and Devices Fabricated by UV-laser Induced Quantum Well Intermixing

UV Laser Induced Selective-Area Bandgap Engineering for Fabrication of InGaAsP/InP Laser Devices

Quantum Well Intermixing For The Realization Of Photonic Integrated Circuits

Photonic integrated circuits fabricated using quantum well intermixing

Optical Loss of Bandgap Shifted InGaAsP/InP Waveguide Using Argon Plasma-Enhanced Quantum Well Intermixing

Quantum Well Intermixing of InGaAsP/InP Laser Structure by Sputtering Al2O3

Photonic-integrated circuits and components using quantum well intermixing

Photonic Integrated Circuits and Components Using Quantum Well Intermixing

Bandgap shifted InGaAsP/InP quantum well waveguides using MeV ion implantation

Optical and electrical properties of bandgap shifted 1.55-/spl mu/m laser diodes

Quantum-Well Intermixing For Optoelectronic Integration Using High-Energy Ion-Implantation

Bandgap Engineering of Ingaasp/Inp Laser Structure by Argon Plasma Induced Point Defects

InAs0.45P0.55/InP Strained Multiple Quantum Wells Intermixed by Inductively Coupled Plasma Etching

Mode Selection in InGaAs/InGaAsP Quantum Well Photonic Crystal Lasers Based on Coupled Double-Heterostructure Cavities.

Bandgap Engineering Of Ingaasp/Inp Multiple Quantum Well Structure By Dielectric Sputtering

Transparency of Band-Gap-shifted InGaAsP/lnP Quantum-Well Waveguides

Polarization Insensitive InGaAs/InGaAsP/InP Amplifiers Using Quantum Well Intermixing

Optical and electrical properties of bandgap shifted 1.55-μm laser diodes

Argon Plasma Induced Quantum Well Intermixing Technology