Argon Plasma Induced Quantum Well Intermixing Technology

PENG Sheng-hua,ZHANG Xin,HE Jian-jun

DOI: https://doi.org/10.3785/j.issn.1008-973x.2011.06.016

2011-01-01

Abstract:Argon plasma induced quantum well intermixing was investigated for an InGaAsP/InP multi-quantum well structure.When the radio frequency(RF) power was fixed at 480 W,inductively coupled plasma(ICP) power at 500 W and ICP treatment time at 1 min,the etching depth of the quantum well samples was less than 500 nm,and the defects induced by the ICP were confined in the sacrificial layer.The samples were then annealed in nitrogen atmosphere for 2 min at different temperatures,and the defects diffused to the quantum well layers to induce quantum well intermixing.The photoluminescence(PL) of experimental samples showed that with the increasing ICP power and annealing temperature,the blue-shift of the PL peaks of the quantum well samples increased and this trend saturated when the ICP power reached 500 W with the annealing temperature at 750 ℃.Under this condition,the blue shift of PL peak as large as 110 nm was obtained and the PL intensity was 55% of the as-grown sample,which indicates the intermixed quantum well samples are still in good crystal lattice quality.