Quantum Well Intermixing of InGaAsP/InP Laser Structure by Sputtering Al2O3

Hongli Zhu,Yuan Zhuang,Xin Zhang,Jian-Jun He

DOI: https://doi.org/10.1364/oedi.2014.of3c.3

2014-01-01

Abstract:Experimental results on a new method of quantum well intermixing by sputtering Al2O3 is presented. A bandgap blueshift upto 100nm is obtained. A FP laser blue-shifted by 80nm is fabricated with low threshold current.

What problem does this paper attempt to address?

Nitrogen Plasma Enhanced Quantum Well Intermixing in InGaAsP/InP Laser Structure

Peng, Shenghua,Xin Zhang,Jian-Jun He

DOI: https://doi.org/10.1364/acp.2009.wd3

2009-01-01

Abstract:Experimental results on a new method of plasma enhanced quantum well intermixing is presented. Using nitrogen plasma treatment followed by rapid thermal annealing, a 100nm-blueshift of photoluminescence peak is obtained. The new method has much weaker side-effect of etching than previously reported method using Argon plasma.
Bandgap Engineering Of Ingaasp/Inp Multiple Quantum Well Structure By Dielectric Sputtering

Hongli Zhu,Yuan Zhuang,Xin Zhang,Jian-Jun He

2014-01-01

Abstract:This paper investigates a method of Si3N4 sputtering and annealing on quantum well intermixing for bandgap engineering of InGaAsP/InP multiple quantum well structure. A bandgap blueshift of about 90nm is obtained. At the same time, the PL peak width becomes narrower, and the intensity is slightly increased. The waveguide losses at the absorption edge of the waveguide with and without QWI are about 27 dB/cm and 39 dB/cm, respectively. The results indicate the good quality of the MQW material after the bandgap engineering by dielectric sputtering and annealing.
Large bandgap shift by UV excimer laser induced quantum well intermixing for photonic integration

Yuan Zhuang,Xin Zhang,Mohammad Kaleem,Jianjun He

DOI: https://doi.org/10.1109/ICOCN.2013.6617207

2013-01-01

Abstract:A bandgap blue shift of 142nm with enhanced photoluminescence (PL), is demonstrated experimentally. in an InGaAsP/InP quantum well (QW) structure using KrF excimer laser induced quantum well intermixing (QWI) technique. The simple process only involves irradiation of UV pulses from a KrF excimer laser, followed by rapid thermal annealing (RTA) at 750 °C for 2 minutes. The absorption constant at the original band-edge is reduced to only 20dB/cm for the QWI waveguide. The fabricated QWI FP laser also has excellent optical and electrical properties, showing good potential for applications in monolithic integrated multibandgap devices.
Quantum Well Intermixing For The Realization Of Photonic Integrated Circuits

p j poole,n sylvain charbonneau,m dion,yan feng,jian jun he,emil s koteles,i v mitchell,r d goldberg

DOI: https://doi.org/10.1117/12.228872

1995-01-01

Abstract:A technique, based on quantum well (QW) intermixing, has been developed for the post growth, spatially selective tuning of the QW bandgap in a laser structure. High energy (MeV) ion implantation is used to create a large number of vacancies and interstitials in the device. During high temperature processing, these defects simultaneously enhance the intermixing of the QW and the barrier materials, producing a blue shift of the QW bandgap, and are annealed out. Increases in bandgap energy (measured using low temperature photoluminescence spectroscopy) of greater than 60 meV can be achieved. Absorption spectroscopy in the waveguide direction is also used to quantify any excess loss in the structure. Using a simple masking scheme to spatially modify the defect concentration, different regions of a wafer can be blue shifted by different amounts. This allows the integration of many different devices such as lasers, detectors, modulators, waveguides etc. on a single wafer using only a single, post-growth processing step. The performance of both passive (waveguide) and active (laser) devices produced using this technique is described, as well as the practicality of this technique in the production of photonic integrated circuits.
Photonic integrated circuits fabricated using quantum well intermixing

n sylvain charbonneau,a delage,j e haysom,fang yang,p j poole,g c aers,jian jun he,emil s koteles,p g piva,t w simpson,i v mitchell

DOI: https://doi.org/10.1117/12.321940

1998-01-01

Abstract:A technique, based on quantum well (QW) intermixing, has been developed for the post growth, spatially selective tuning of the QW bandgap in a semiconductor laser structure. High energy (MeV) ion implantation is used to create a large number of vacancies and interstitials in the device. During high temperature processing (rapid thermal annealing), these defects enhance the intermixing of the QW and the barrier materials while being annealed out, producing a blue shift of the QW bandgap. Increases in bandgap energy of greater than 100 nm at 1.55 mu m in InGaAs/lnGaAsP/InP structures can be achieved. Absorption spectroscopy in the waveguide geometry is used to quantify the losses in the structure. Using a simple masking scheme to spatially modify the defect concentration, different regions of a wafer can be blue shifted by different amounts. This allows the integration of many different devices such as lasers, detectors, modulators, amplifiers and waveguides on a single wafer using only a single, postgrowth processing step. The performance of both passive (waveguide) and active (laser and amplifier) devices produced using this technique will be described, as well as the practicality of this technique in the production of photonic integrated circuits.
Argon Plasma Induced Quantum Well Intermixing Technology

PENG Sheng-hua,ZHANG Xin,HE Jian-jun

DOI: https://doi.org/10.3785/j.issn.1008-973x.2011.06.016

2011-01-01

Abstract:Argon plasma induced quantum well intermixing was investigated for an InGaAsP/InP multi-quantum well structure.When the radio frequency(RF) power was fixed at 480 W,inductively coupled plasma(ICP) power at 500 W and ICP treatment time at 1 min,the etching depth of the quantum well samples was less than 500 nm,and the defects induced by the ICP were confined in the sacrificial layer.The samples were then annealed in nitrogen atmosphere for 2 min at different temperatures,and the defects diffused to the quantum well layers to induce quantum well intermixing.The photoluminescence(PL) of experimental samples showed that with the increasing ICP power and annealing temperature,the blue-shift of the PL peaks of the quantum well samples increased and this trend saturated when the ICP power reached 500 W with the annealing temperature at 750 ℃.Under this condition,the blue shift of PL peak as large as 110 nm was obtained and the PL intensity was 55% of the as-grown sample,which indicates the intermixed quantum well samples are still in good crystal lattice quality.
UV Laser Induced Selective-Area Bandgap Engineering for Fabrication of InGaAsP/InP Laser Devices

Mohammad Kaleem,Xin Zhang,Yuan Zhuang,Jian-Jun He,Neng Liu,Jan J. Dubowski

DOI: https://doi.org/10.1016/j.optlastec.2013.03.012

IF: 4.939

2013-01-01

Optics & Laser Technology

Abstract:Large bandgap blueshifts in III–V quantum semiconductor microstructures are achievable with UV-laser induced quantum well intermixing (QWI). We report on the application of the UV-laser QWI technique to investigate bandgap engineering of a compressively strained InGaAsP/InP quantum well laser microstructure. The attractive performance of the technique, determined by the ability of a laser to generate point defects, has been demonstrated with bandgap blueshifts reaching 142nm, with enhancement of photoluminescence intensity. We have also investigated this technique for post-growth wafer level processing designed for the fabrication of laser diodes.
Optical Loss of Bandgap Shifted InGaAsP/InP Waveguide Using Argon Plasma-Enhanced Quantum Well Intermixing

Xin Zhang,Jian-Jun He

DOI: https://doi.org/10.1109/aom.2010.5713541

2010-01-01

Abstract:A blue shift of the bandgap 90nm, in an InGaAsP/InP quantum well (QW) structure using argon plasma enhanced quantum well intermixing (QWI) technique is presented. The loss coefficient at the original band-edge was reduced from 373dB/cm to 68dB/cm, which is acceptable and utilizable for photonic integrated circuit application.
Bandgap Engineering of Ingaasp/Inp Laser Structure by Argon Plasma Induced Point Defects

Mohammad Kaleem,Xin Zhang,Jian-Jun He

DOI: https://doi.org/10.1364/acpc.2012.af4a.12

2012-01-01

Abstract:Blue shift of the bandgap in InGaAsP/InP quantum well structure is demonstrated experimentally. The technique depends upon generation of point defects via plasma induced damage during deposition of sputtered SiO2 followed by rapid thermal annealing.
Multi-bandgap Photonic Materials and Devices Fabricated by UV-laser Induced Quantum Well Intermixing

Mohammad Kaleem,Xin Zhang,You-guang Yang,Yuan Zhuang,Jian-jun He

DOI: https://doi.org/10.1007/s11801-013-3088-1

2013-01-01

Abstract:Ultraviolet (UV)-laser induced quantum well intermixing (QWI) technique can generate large multiple bandgap blue shifts in III-V quantum well semiconductor heterostructure. The application of the UV-laser QWI technique to fabricate multi-bandgap photonic devices based on compressively strained InGaAsP/InP quantum well laser microstructure is reported. We show that under certain UV-laser irradiation conditions, the photoluminescence (PL) intensity can be enhanced, and the full width at half maximum (FWHM) linewidth can be reduced. The blue shift of bandgap can reach as large as 145 nm, while the PL intensity is about 51% higher than that of the as-grown material. Experimental results of post growth wafer level processing for the fabrication of bandgap-shifted waveguides and laser diodes are presented.
Quantum-Well Intermixing For Optoelectronic Integration Using High-Energy Ion-Implantation

s charbonneau,p j poole,p g piva,g c aers,emil s koteles,mahmoud fallahi,j j he,j p mccaffrey,m buchanan,michel dion,r d goldberg,i v mitchell

DOI: https://doi.org/10.1063/1.359948

IF: 2.877

1995-01-01

Journal of Applied Physics

Abstract:The technique of ion-induced quantum-well (QW) intermixing using broad area, high energy (2-8 MeV As4+) ion implantation has been studied in a graded-index separate confinement heterostructure InGaAs/GaAs QW laser. This approach offers the prospect of a powerful and relatively simple fabrication technique for integrating optoelectronic devices. Parameters controlling the ion-induced QW intermixing, such as ion doses, fluxes, and energies, post-implantation annealing time, and temperature are investigated and optimized using optical characterization techniques such as photoluminescence, photoluminescence excitation, and absorption spectroscopy. (C) 1995 American Institute of Physics.
Polarization Insensitive InGaAs/InGaAsP/InP Amplifiers Using Quantum Well Intermixing

JJ He,S Charbonneau,PJ Poole,GC Aers,Y Feng,ES Koteles,RD Goldberg,IV Mitchell

DOI: https://doi.org/10.1063/1.117787

IF: 4

1996-01-01

Applied Physics Letters

Abstract:A polarization insensitive optical amplifier based on a lattice matched InGaAs/InGaAsP/InP multiple quantum well (MQW) laser structure operating at 1.5 μm has been fabricated through vacancy enhanced quantum well intermixing using broad area, high energy (1 MeV P+) ion implantation. A simple model shows that if the interdiffusion rate of the anions is larger than that of the cations, the blue shift in the ground state heavy hole transition energy after implantation and annealing is greater than the light hole state blue shift, bringing the two bands together. Current–voltage measurements indicate that junction characteristics are well maintained after implantation. This simple technique for fabricating polarization insensitive optical amplifiers is readily extended to the monolithical integration of such devices along with other passive and active optoelectronic devices and opens the door to practical photonic integrated circuits.
Bandgap shifted InGaAsP/InP quantum well waveguides using MeV ion implantation

J.-J. He,Feng, Y.,E. S. Koteles,P. J. Poole,M. Davis,M. Dion,R. Goldberg,I. Mitchell,S. Charbonneau

DOI: https://doi.org/10.1049/el:19951415

1995-01-01

Electronics Letters

Abstract:A large blue shift of the bandgap 90 nm, in an InGaAsP/InP quantum well (QW) p-i-n laser structure using a single-step MeV phosphorous ion implantation is reported. The absorption constant at the original band-edge was reduced from 110 cm-1 to only 4 cm-1. No excess loss in the waveguide due to the QW intermixing process was observed. Current/voltage measurements indicate that junction characteristics are well maintained, providing a means of producing side-by-side active and passive sections using a simple, single processing step on laser structures fabricated using standard growth techniques
Photonic Integrated Circuits and Components Using Quantum Well Intermixing

JJ He,ES Koteles,PJ Poole,Y Feng,M Davis,S Charbonneau,RD Goldberg,LV Mitchell

DOI: https://doi.org/10.1117/12.253161

1996-01-01

Abstract:The monolithic integration of optical components with different functionalities on a single semiconductor wafer requires spatially selective control of bandgap energies. We have developed a simple, post-growth technique based on quantum well intermixing using ion implantation and rapid thermal annealing, which allows multiple selective area bandgap tailoring. Waveguide absorption spectra demonstrate that the bandgap energy can be shifted as much as 90 nm without any excess loss. By depositing a SiO2 layer of different thicknesses in different regions as the implantation mask, quantum wells in different sections of a wafer can be intermixed to different degrees in a single implantation and annealing process. It has also been shown that the heavy-hole and light hole states in the quantum wells can become degenerate at a certain degree of intermixing, which allows the fabrication of polarization insensitive optical amplifiers and electro-absorptive switches. The performance of both active (laser, amplifier, modulator) and passive (waveguide) components produced using this technique will be presented.
Photonic-integrated circuits and components using quantum well intermixing

jian jun he,emil s koteles,p j poole,yan feng,michael j davis,n sylvain charbonneau,r d goldberg,i v mitchell

DOI: https://doi.org/10.1117/12.253161

1996-01-01

Abstract:The monolithic integration of optical components with different functionalities on a single semiconductor wafer requires spatially selective control of bandgap energies. We have developed a simple, post-growth technique based on quantum well intermixing using ion implantation and rapid thermal annealing, which allows multiple selective area bandgap tailoring. Waveguide absorption spectra demonstrate that the bandgap energy can be shifted as much as 90 nm without any excess loss. By depositing a SiO2 layer of different thicknesses in different regions as the implantation mask, quantum wells in different sections of a wafer can be intermixed to different degrees in a single implantation and annealing process. It has also been shown that the heavy-hole and light hole states in the quantum wells can become degenerate at a certain degree of intermixing, which allows the fabrication of polarization insensitive optical amplifiers and electro-absorptive switches. The performance of both active (laser, amplifier, modulator) and passive (waveguide) components produced using this technique will be presented.
InP-based InGaAs/InAlGaAs Digital Alloy Quantum Well Laser Structure at 2 Μm

Gu Yi,Wang Kai,Li Yao-Yao,Li Cheng,Zhang Yong-Gang

DOI: https://doi.org/10.1088/1674-1056/19/7/077304

2010-01-01

Chinese Physics B

Abstract:The structural and optical characteristics of InP-based compressively strained InGaAs quantum wells have been significantly improved by using gas source molecular beam epitaxy grown InAs/In0.53Ga0.47As digital alloy triangular well layers and tensile In0.53Ga0.47As/InAlGaAs digital alloy barrier layers. The x-ray diffraction and transmission electron microscope characterisations indicate that the digital alloy structures present favourable lattice quality. Photo-luminescence (PL) and electroluminescence (EL) measurements show that the use of digital alloy barriers offers better optical characteristics than that of conventional random alloy barriers. A significantly improved PL signal of around 2.1 μm at 300 K and an EL signal of around 1.95 μm at 100 K have been obtained.
Transparency of Band-Gap-shifted InGaAsP/lnP Quantum-Well Waveguides

JJ He,ES Koteles,M Davis,PJ Poole,M Dion,Y Feng,S Charbonneau,P Piva,M Buchanan,R Goldberg,I Mitchell

DOI: https://doi.org/10.1139/p96-827

1996-01-01

Canadian Journal of Physics

Abstract:The properties of band-gap-shifted InGaAsP/InP quantum-well waveguides were investigated. A 90 nm blue-shift of the band gap was obtained by phosphorus ion implantation followed by rapid thermal annealing. It was shown that the absorption constant at the original band edge was reduced from 110 to only 4 cm−1. No waveguide excess loss was observed due to the QW-intermixing process. Good electrical properties of the pin diode were also maintained.
InAs0.45P0.55/InP Strained Multiple Quantum Wells Intermixed by Inductively Coupled Plasma Etching

Meng Cao,Huizhen Wu,Yan-Feng Lao,Chunfang Cao,Cheng Lü

DOI: https://doi.org/10.1016/j.materresbull.2009.08.006

IF: 5.6

2009-01-01

Materials Research Bulletin

Abstract:The intermixing effect on InAs0.45P0.55/InP strained multiple quantum wells (SMQWs) by inductively coupled plasma (ICP) etching and rapid thermal annealing (RTA) is investigated. Experiments show that the process of ICP etching followed RTA induces the blue shift of low temperature photoluminescence (PL) peaks of QWs. With increasing etching depth, the PL intensities are firstly enhanced and then diminished. This phenomenon is attributed to the variation of surface roughness and microstructure transformation inside the QW structure during ICP processing.
Optical Confinement Via Quantum Well Intermixing On A Buried Ingaas/Ingaasp Heterostructure

j e haysom,a delage,p j poole,yan feng,jian jun he,emil s koteles,n sylvain charbonneau,r d goldberg,i v mitchell

DOI: https://doi.org/10.1117/12.328763

1998-01-01

Abstract:Selective area quantum well intermixing is used to create buried heterostructure narrow waveguides, which are shown be effective waveguides for a narrow range of wavelengths near the lasing wavelength of the structure. Measurements on as-grown and uniformly intermixed slab waveguide are used to determine the refractive index of the two regions, and the net refractive index difference is used to predict modal behaviour of the buried waveguides.

Quantum Well Intermixing of InGaAsP/InP Laser Structure by Sputtering Al2O3

Nitrogen Plasma Enhanced Quantum Well Intermixing in InGaAsP/InP Laser Structure

Bandgap Engineering Of Ingaasp/Inp Multiple Quantum Well Structure By Dielectric Sputtering

Large bandgap shift by UV excimer laser induced quantum well intermixing for photonic integration

Quantum Well Intermixing For The Realization Of Photonic Integrated Circuits

Photonic integrated circuits fabricated using quantum well intermixing

Argon Plasma Induced Quantum Well Intermixing Technology

UV Laser Induced Selective-Area Bandgap Engineering for Fabrication of InGaAsP/InP Laser Devices

Optical Loss of Bandgap Shifted InGaAsP/InP Waveguide Using Argon Plasma-Enhanced Quantum Well Intermixing

Bandgap Engineering of Ingaasp/Inp Laser Structure by Argon Plasma Induced Point Defects

Multi-bandgap Photonic Materials and Devices Fabricated by UV-laser Induced Quantum Well Intermixing

Quantum-Well Intermixing For Optoelectronic Integration Using High-Energy Ion-Implantation

Polarization Insensitive InGaAs/InGaAsP/InP Amplifiers Using Quantum Well Intermixing

Bandgap shifted InGaAsP/InP quantum well waveguides using MeV ion implantation

Photonic Integrated Circuits and Components Using Quantum Well Intermixing

Photonic-integrated circuits and components using quantum well intermixing

InP-based InGaAs/InAlGaAs Digital Alloy Quantum Well Laser Structure at 2 Μm

Transparency of Band-Gap-shifted InGaAsP/lnP Quantum-Well Waveguides

InAs0.45P0.55/InP Strained Multiple Quantum Wells Intermixed by Inductively Coupled Plasma Etching

Optical Confinement Via Quantum Well Intermixing On A Buried Ingaas/Ingaasp Heterostructure