Abstract:A technique, based on quantum well (QW) intermixing, has been developed for the post growth, spatially selective tuning of the QW bandgap in a semiconductor laser structure. High energy (MeV) ion implantation is used to create a large number of vacancies and interstitials in the device. During high temperature processing (rapid thermal annealing), these defects enhance the intermixing of the QW and the barrier materials while being annealed out, producing a blue shift of the QW bandgap. Increases in bandgap energy of greater than 100 nm at 1.55 mu m in InGaAs/lnGaAsP/InP structures can be achieved. Absorption spectroscopy in the waveguide geometry is used to quantify the losses in the structure. Using a simple masking scheme to spatially modify the defect concentration, different regions of a wafer can be blue shifted by different amounts. This allows the integration of many different devices such as lasers, detectors, modulators, amplifiers and waveguides on a single wafer using only a single, postgrowth processing step. The performance of both passive (waveguide) and active (laser and amplifier) devices produced using this technique will be described, as well as the practicality of this technique in the production of photonic integrated circuits.

Nitrogen Plasma Enhanced Quantum Well Intermixing in InGaAsP/InP Laser Structure

Argon Plasma Induced Quantum Well Intermixing Technology

Quantum Well Intermixing of InGaAsP/InP Laser Structure by Sputtering Al2O3

High-Density Plasma Enhanced Quantum Well Intermixing in InGaAs/InGaAsP Structure Using Argon Plasma

Argon Plasma Exposure Enhanced Intermixing in an Undoped InGaAsP/InP Quantum-Well Structure

Optical Loss of Bandgap Shifted InGaAsP/InP Waveguide Using Argon Plasma-Enhanced Quantum Well Intermixing

Photoluminescence Enhancement By Inductively Coupled Argon Plasma Exposure For Quantum-Well Intermixing

Bandgap Engineering of Ingaasp/Inp Laser Structure by Argon Plasma Induced Point Defects

Investigations on the blue-shift phenomena in argon plasma intermixed InGaAs/InGaAsP quantum well structures

Large blueshift in InGaAs/InGaAsP laser structure using inductively coupled argon plasma-enhanced quantum well intermixing

Large bandgap shift by UV excimer laser induced quantum well intermixing for photonic integration

Luminescence Enhancement of Plasma-Etched InAsP∕InGaAsP Quantum Wells

Quantum-Well Intermixing For Optoelectronic Integration Using High-Energy Ion-Implantation

InAs0.45P0.55/InP Strained Multiple Quantum Wells Intermixed by Inductively Coupled Plasma Etching

Quantum Well Intermixing For The Realization Of Photonic Integrated Circuits

Photonic integrated circuits fabricated using quantum well intermixing

Implementing Multiple Band Gaps Using Inductively Coupled Argon Plasma Enhanced Quantum Well Intermixing

Plasma-induced quantum well intermixing for the universal high-density photonic integration

Inductively Coupled Argon Plasma-Enhanced Quantum-Well Intermixing: Cap Layer Effect and Plasma Process Influence

GaAs/AlGaAs Quantum Well Intermixing Using High-Density Argon Plasma