Abstract:With the development of nanomanufacturing methods, the manipulation of photons down to the nanoscale in silicon integrated optical chips has become a feasible and promising solution for next-generation data processing as electronic chips reach their limit. As an essential active device that generates photons for all other working photonic components, silicon lasers are the last barrier to achieve silicon integrated optical chips. Although optical gain in silicon nanocrystals (Si-NCs) was observed in 2000, the progress in realizing all-Si lasers has been very limited due to the inferior optical gain compared to traditional gain materials. In this paper, highly luminescent thin films of Si-NCs with a photoluminescence quantum yield of 57% are developed. The broadband photoluminescence covers the wavelength range from 650 to 900 nm, and wide-range optical gains are identified, indicating the feasibility of a tunable laser. Distributed feedback (DFB) all-Si lasers are fabricated using these thin films and pumped by femtosecond pulses. Various characteristic lasing behaviors are observed. Additionally, three different DFB grating periods are selected, and the lasing peak can be tuned by over 100 nm. The lasing thresholds range from 83 to 53.3 MW/cm(2). The linewidths of lasing peaks are less than 2 nm.

4-Λ InGaAsP-Si Distributed Feedback Evanescent Lasers with Varying Silicon Waveguide Width.

Heterogeneously Integrated Iii-V/Silicon Dual-Mode Distributed Feedback Laser Array for Terahertz Generation

III–V/Si Hybrid Laser Array with DBR on Si Waveguide*

4–λ hybrid InGaAsP-Si evanescent laser array with low power consumption for on-chip optical interconnects

1.9 μm hybrid silicon/iii-v semiconductor laser

Single-lobe, Surface-Normal Beam Surface Emission from Second-Order Distributed Feedback Lasers with Half-Wave Grating Phase Shift

Design of enlarged-asymmetric-power single-mode silicon evanescent lasers with asymmetric distributed feedback gratings

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

Wavelength Tunable Cavity Mirror for Silicon Micro-Ring-Based Hybrid Integrated Lasers

Second-Order Distributed Feedback Quantum Cascade Lasers at 7.8μm

Emission Characteristics of All-Silicon Distributed Feedback Lasers with a Wide Gain Range

Four Distributed Feedback Laser Array Integrated with Multimode-Interference and Semiconductor Optical Amplifier

A Hybrid Single-Mode Laser Based on Slotted Silicon Waveguides

Hybrid InGaAsP-Si Evanescent Laser by Selective-Area Metal-Bonding Method

InGaAsP/InP DFB Laser Array Monolithically Integrated with MMI Combiner and SOA

IaAsP/InGaAsP quantum-well 1.3 μm vertical-cavity surface-emitting lasers

InGaAsP/InP Dual Wavelength Bipolar Cascade Lasers with 100 Nm Wavelength Spacing

High Speed Evanescent Quantum‐Dot Lasers on Si

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

Hybrid vertical-cavity laser with lateral emission into a silicon waveguide