InGaAsP/InP Dual Wavelength Bipolar Cascade Lasers with 100 Nm Wavelength Spacing

J Yan,J Cai,G Ru,X Yu,FS Choa,J Fan

DOI: https://doi.org/10.1109/cleo.2005.201850

2005-01-01

Abstract:Simultaneous dual-wavelength (1350 nm and 1450 nm) lasing is achieved from an InGaAsP/InP bipolar cascade laser, which includes two different active regions and a low resistance hetero-tunnel-junction. Ultra-broadband gain materials can be obtained with such a structure.

What problem does this paper attempt to address?

Mid-infrared Widely Tunable Single-Mode Interband Cascade Lasers Based on V-coupled Cavities.

Zhanyi Wang,Jingli Gong,Jian-Jun He,Lu Li,Rui Q. Yang,James A. Gupta

DOI: https://doi.org/10.1364/ol.391308

IF: 3.6

2020-01-01

Optics Letters

Abstract:We demonstrate widely tunable single-mode V-coupled-cavity lasers emitting at wavelengths near 3 µm based on a type-II interband cascade (IC) structure. The mode selection is achieved using a half-wave V-coupler designed for the IC structure in the mid-infrared range. The laser waveguides and cavity structure are deeply etched in a single etching step, without any grating. By changing the injection current at a fixed heat-sink temperature, a tuning range over 35 nm can be achieved with a side-mode suppression-ratio up to 28 dB. The tuning range can be extended to 60 nm when combined with the adjustments of the heat-sink temperature.
Mode Selection in InGaAs/InGaAsP Quantum Well Photonic Crystal Lasers Based on Coupled Double-Heterostructure Cavities.

Ling-Fang Wang,Xiao-Tian Cheng,Xiao-Dong Zhang,Jia-Wang Yu,Jun-Yong Yan,Zhi-Bo Ni,Tao Wang,Ming-Jun Xia,Xing Lin,Feng Liu,Chao-Yuan Jin

DOI: https://doi.org/10.1364/oe.447759

IF: 3.8

2022-01-01

Optics Express

Abstract:Photonic crystal lasers with a high-Q factor and small mode volume are ideal light sources for on-chip nano-photonic integration. Due to the submicron size of their active region, it is usually difficult to achieve high output power and single-mode lasing at the same time. In this work, we demonstrate well-selected single-mode lasing in a line-defect photonic crystal cavity by coupling it to the high-Q modes of a short double-heterostructure photonic crystal cavity. One of the FP-like modes of the line-defect cavity can be selected to lase by thermo-optically tuning the high-Q mode of the short cavity into resonance. Six FP-like modes are successively tuned into lasing with side mode suppression ratios all exceeding 15 dB. Furthermore, we show a continuous wavelength tunability of about 10 nm from all the selected modes. The coupled cavity system provides a remarkable platform to explore the rich laser physics through the spatial modulation of vacuum electromagnetic field at submicron scale.
Widely Tunable Single-Mode Mid-Infrared Interband Cascade Lasers

Hanting Yang,Jingli Gong,Jian-Jun He,Rui Q. Yang

DOI: https://doi.org/10.1364/lacsea.2020.lw3e.2

2020-01-01

Abstract:We report the first demonstration of widely tunable single-mode mid-infrared interband cascade lasers based on a V-coupled cavity. The obtained wavelength tuning range is 60 nm with a side-mode suppression ratio (SMSR) over 20dB.
Mid-infrared Tunable Interband Cascade Laser Employing Double-Trench Waveguide Structure with a Tuning Range of 118 Nm

Zhanyi Wang,Jingli Gong,Rui Q. Yang,Jian-Jun He

DOI: https://doi.org/10.1109/icocn59242.2023.10236288

2023-01-01

Abstract:We present a widely tunable single-mode interband cascade laser (ICL) emitting at 3.3 μm based on the V-coupled cavity employing a double-trench structure, with aside-mode suppression ratio of up to 36 dB.
Single-mode Interband Cascade Laser Based on V-coupled Cavity with 210 Nm Wavelength Tuning Range Near 3 Μm.

Jingli Gong,Zhanyi Wang,Jian -Jun He,Lu Li,Rui Q. Yang,James A. Gupta

DOI: https://doi.org/10.1364/oe.504209

IF: 3.8

2023-01-01

Optics Express

Abstract:Interband cascade lasers (ICLs) are efficient and compact mid-infrared (3-5 µm) light sources with many applications. By enhancing the coupling coefficient and using a type-I ICL wafer, single-mode ICLs were demonstrated based on V-coupled cavity with significantly extended tuning range and with a side mode suppression ratio (SMSR) exceeding 35 dB in continuous wave operation near 3 µm. A V-coupled cavity ICL exhibited a wavelength tuning up to 67 nm at a fixed temperature, and the total tuning range exceeds 210 nm when the heat sink temperature is adjusted from 80 to 180 K. The realization of single-mode in such a wide temperature range with a tuning range exceeding 210 nm verified the advantage of V-coupled cavity ICLs for effective detection of multiple gas species. This is very different from the conventional distributed feedback (DFB) laser where the single-mode operation is restricted to a narrow temperature range, in which the match between the gain peak and the DFB grating period determined wavelength is required. Another V-coupled cavity ICL is tuned over 120 nm from 2997.56 nm to 3117.50 nm with the heat-sink temperature varied from 210 K to 240 K, over 100 K higher than the previously reported maximum operating temperature for V-coupled cavity ICLs.
Intra-cavity Cascaded Pumped 912nm/1030 Nm Dual Wavelength Laser Output

Weiwei Hu,Yongliang Li,Chenwen Hu,Xiaokun Gu,Hongxin Liu,Yipeng Zhang,Yingming Zhang

DOI: https://doi.org/10.1016/j.optcom.2019.07.043

IF: 2.4

2019-01-01

Optics Communications

Abstract:A dual-wavelength laser operating at 912 nm/1030 nm for the first time using a compact intracavity cascade pumping structure is set up The laser system model was designed and built for testing. The proposed system employs a coaxial linear cavity structure and uses a fiber-coupled 808 nm laser diode (LD) end-pumped Nd:GdVO4 crystal to obtain a 912 nm laser, which then pumped Yb:YAG crystal directly in the cavity to produce a 1030 nm laser. When the LD pump power at 808 nm is 25 W, a 0.97 W laser at 912 nm and a 1.33 W laser at 1030 nm are obtained, respectively. The corresponding optical to optical conversion efficiency is 9.2%. The beam quality factors M-2 of 912 nm and 1030 nm lasers at maximum output power is measured to be 1.19 and 1.23.
Single Mode Operation of Short-Cavity Quantum Cascade Lasers

Fengqi Liu,Yu Guo,Lu Li,Ye Shao,Junqi Liu,Xiuzhen Lu,Zhanguo Wang

DOI: https://doi.org/10.3321/j.issn:0253-4177.2006.04.018

2006-01-01

Abstract:Single mode operation of strain-compensated In1-x Gax As/In1-y AlyAs quantum cascade lasers emitting at λ≈5. 4 and 8μm is realized by shortening the Fabry-Perot cavity length. Accurate control of growth parameters and strain balance results in a perfect lattice match and thus in excellent material quality. Single mode emission with a side mode suppression ratio greater than 20dB for uncoated lasers is realized. Record low threshold currents of 50 and 80mA and record short cavity lengths of 145 and 170μm are achieved for λ≈5. 4μm and λ≈7. 84μm devices, respectively, in pulsed mode.
Quasi-Continuous Wavelength Tuning of Single-mode Interband Cascade Lasers Based on V-coupled Cavity

Jingli Gong,Hanting Yang,Rui Q. Yang,Jian-Jun He

DOI: https://doi.org/10.1117/12.2575270

2020-01-01

Abstract:Mid-infrared semiconductor lasers have a wide range of applications in gas sensing, environmental monitoring, medical diagnosis and other fields. The V-coupled cavity laser (VCCL) approach has been successfully applied in the communication band to achieve single-mode operation with a wide tuning range because of its advantages of no grating, compact structure and simple wavelength control. In this paper, the concept of V-coupled cavity is introduced to the interband cascaded lasers, and a monolithically integrated mid-infrared widely tunable single-mode laser is developed. In addition, we experimentally demonstrated a simple and general algorithm for wavelength tuning controlled by two electrodes synchronously, and realized quasi-continuous tuning of single-mode wavelength in mid-infrared interband cascade laser based on the V-coupled cavity configuration for the first time. In the tuning process, the injection current of the short cavity remains unchanged, and the stepped increase of the long cavity current is equivalent to the realization of discrete tuning with the channel spacing of 1.1 nm determined by the short cavity. With the increase of the injection current of the coupler electrode while fixing the long cavity current, the thermo-optic effect caused by the coupler current will cause the refractive index of the two FP cavities to change together, thus realizing the fine tuning of the laser wavelength. A total tuning range of 53.2 nm has been achieved, from 2.8244 mu m to 2.8776 mu m, with the temperature adjusted from 110K to 120K.
GaAs/AlGaAs tunable laser using Fabry-Perot filters based on half-wave coupled lossy deep etched trenches

Xin Chen,Jian-Jun He

DOI: https://doi.org/10.1364/cleopr.2018.w2j.7

2018-01-01

Abstract:We present a GaAs/AlGaAs tunable laser based on three cascaded Fabry-Perot cavities coupled by two half-wave lossy deep etched trenches. The laser exhibits good performance in lasing threshold, side-mode suppression ratio and wavelength tuning range.
GaAs/AlGaAs-Based 870-Nm-band Widely Tunable Edge-Emitting V-Cavity Laser

Wenxiong Wei,Haoyu Deng,Jian-Jun He

DOI: https://doi.org/10.1109/jphot.2013.2281616

IF: 2.4

2013-01-01

IEEE Photonics Journal

Abstract:An 870-nm-band wavelength tunable edge-emitting semiconductor laser based on V-coupled cavities in a GaAs/AlGaAs material system is presented. It does not involve any grating or epitaxial regrowth. Using a single electrode control, 31-channel wavelength tuning with a channel spacing of about 0.38 nm is achieved, with a tuning range of 11.4 nm. By additionally varying the temperature from 8 degrees C to 50 degrees C, wavelength tuning of 60 channels over 22.4 nm is demonstrated. At lower tuning current and with a temperature variation of 18 degrees C, wavelength switching by carrier plasma effect is achieved with a tuning range of 8.2 nm. The simple and compact 870-nm-band edge-emitting tunable laser is suitable for multifunctional photonic integration for optical interconnect and biomedical applications.
GaAs/AlGaAs quantum cascade lasers

Junqi Liu,XiuZhen Lu,Yu Guo,Fengqi Liu,Zhanguo Wang

2005-01-01

Abstract:Growth of quantum cascade lasers based on GaAs/Al0.45Ga0.55As and operating at a wavelength of 9 μm is reported. For a 2 mm cavity length and 35 μm ridge-waveguide width, quasi-continuous wave operation at 120 K is achieved and output optical power without correction at 81 K more than 70 mW is demonstrated.
Single-Electrode-Controlled 26x100ghz Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Lei Wang,Jialiang Jin,Jian-Jun He

2011-01-01

Abstract:We report our latest experimental results on a simple and compact wavelength switchable V-coupled cavity semiconductor laser. Discrete wavelength switching of 26 channels with 100GHz spacing is achieved with a side-mode-suppression-ratio of about 37 dB, using a single-electrode control. It is shown that the wavelength channels can be switched in opposite directions with different consecutively switchable ranges by tuning the long or short cavity.
Widely Wavelength Switchable V-Coupled-Cavity Semiconductor Laser With Similar To 40 Db Side-Mode Suppression Ratio

Jialiang Jin,Lei Wang,Tingting Yu,Yin Wang,Jian-Jun He

DOI: https://doi.org/10.1364/OL.36.004230

IF: 3.6

2011-01-01

Optics Letters

Abstract:We report the first experimental demonstration of a single-electrode-controlled digitally wavelength switchable V-coupled-cavity laser with high side-mode-suppression-ratio (SMSR) in the 40 dB range. Sixteen-channel and twenty-six channel wavelength switchable lasers with 100 GHz spacing are demonstrated with the maximal SMSR of 40 dB and 37 dB, respectively. They do not require complex gratings, multiple epitaxial growths, or complex tuning algorithms. The device size is only 500 mu m x 300 mu m. Such a simple, compact, and high-performance laser has great potential as a low-cost alternative to existing complex tunable lasers for wide deployment in optical networks and beyond. (C) 2011 Optical Society of America
Tunable dual-wavelength laser based on cascaded stimulated polariton scattering

Feilong Gao,Qi Song,Yiyan Xie,Yiran Wang,Xiancui Su,Guoru Li,Bingyuan Zhang,Santosh Kumar

DOI: https://doi.org/10.1016/j.infrared.2024.105197

IF: 2.997

2024-02-02

Infrared Physics & Technology

Abstract:We demonstrate a tunable dual-wavelength laser with two Stokes cavities by combining two stimulated polariton scattering (SPS) effects. The 1064 nm laser is initially generated through diode-side-pumping a Nd:YAG laser crystal. Subsequently, the first Stokes wave is obtained using a MgO:LiNbO 3 crystal, and its wavelength can be continuously tunable. Once the first Stokes wave within the cavity reaches a sufficient strength, it can further interact with MgO:LiNbO 3 to produce cascaded SPS. The second Stokes wave is also continuously tunable by adjusting the angle between two Stokes cavities. This dual-wavelength laser offers flexible tunability as two Stokes waves oscillate in separate cavities. The optimal wavelengths of this dual-wavelength laser were 1073.7 nm and 1083.1 nm, with maximum output power of 560 mW and 610 mW respectively at a pump power of 52 W. The cascaded SPS offers a promising approach to extend the laser spectrum through the utilization of diverse laser crystals and nonlinear crystals.

optics,physics, applied,instruments & instrumentation
Second-Order Distributed Feedback Quantum Cascade Lasers at 7.8μm

Yu Guo,Fengqi Liu,Junqi Liu,Xiuzhen Lu,Zhanguo WANG

DOI: https://doi.org/10.3321/j.issn:0253-4177.2005.03.039

2005-01-01

Abstract:The realization of distributed feedback quantum cascade lasers based on strain-compensated In0.53+xGa0.47-x As/In0.52-yAl0.48+yAs grown on InP substrate using molecular beam epitaxy is reported. The lasers operate at λ ≈ 7.8 mu;m. The second-order surface grating with a period of 2.45 μm is used for feedback. For 1% duty cycle and 5 kHz repetition rate, the emission spectrum is single mode with more than 20 dB side mode suppression ratio between 93 and 173 K with the tuning coefficient of dλ/dT = 0.5125 nm/K. Peak optical power is over than 12 mW up to 153 K.
InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

Y.-F. Lao,C.-F. Cao,H.-Z. Wu,M. Cao,Q. Gong

DOI: https://doi.org/10.1049/el:20093380

2009-01-01

Electronics Letters

Abstract:1.3 mu m vertical-cavity surface-emitting lasers based on a novel gain media consisting of InAsP/InGaAsP strain-compensated multiple quantum wells are reported. SiO2/TiO2 dielectric thin-film pairs and wafer-bonded GaAs/Al(Ga)As distributed Bragg reflectors are used as the top and bottom cavity mirrors, respectively. The device with a 5 mu m-diameter selectively etched tunnel-junction aperture exhibits submilliampere threshold current as low as 0.54 mA and single-transverse mode emission. Maximum output optical power of 1.9 mW was observed in multimode lasing devices.
High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers

Junqi Liu,Fengqi Liu,Lü Li,Yong Shao,Yu Guo,Zhanguo Wang

DOI: https://doi.org/10.1088/0256-307x/23/7/035

2006-01-01

Abstract:We report on the realization of GaAs/AlGaAs quantum cascade lasers with an emission wavelength of 9.1 μm above the liquid nitrogen temperature. With optimal current injection window and ridge width of 24 and 60 μm respectively, a peak output power more than 500 mW is achieved in pulsed mode operation. A low threshold current density Jth = 2.6 kA/cm2 gives the devices good lasing characteristics. In a drive frequency of 1 kHz, the laser operates up to 20% duty cycle.
Tunable dual-wavelength semiconductor laser based on indium-rich cluster quantum structure

Li Xue,Tai Han-Xu,Wang Yu-Hong,Zheng Ming,Zhang Jian-Wei,Zhang Xing,Ning Yong-Qiang,Wu Jian,Wang Li-Jun

DOI: https://doi.org/10.11972/j.issn.1001-9014.2022.03.003

2022-01-01

JOURNAL OF INFRARED AND MILLIMETER WAVES

Abstract:We design and fabricate a double-wavelength tunable laser with a single grating structure using a single-gain chip. The gain chip adopts an indium-rich cluster quantum constraint structure,which can generate ultrawide flat-top gain. The flat-top gain is the basis for producing a dual-wavelength laser with the same intensity. A grating is inserted into the exterior of the gain chip so that its resonator is composed of internal and external cavi. ties. The internal cavity consists of two natural cleavage planes of the gain chip for oscillating the output laser at a fixed wavelength(974 nm). The tunable external cavity consists of a natural cleavage plane and a grating for the output laser at a tunable wavelength(969. 1 similar to 977. 9 nm). The laser structures of the single-gain chip and single grating can produce synchronous dual-wavelength output,which avoids a complicated optical path design. The frequency difference between the two wavelengths is in the terahertz band. Thus,the laser can be used as a dualwavelength laser source to generate terahertz radiation.
Narrow-linewidth, tunable external cavity dual-band diode lasers through InP/GaAs-Si3N4 hybrid integration

Yeyu Zhu,Lin Zhu

DOI: https://doi.org/10.1364/OE.27.002354

2019-02-04

Abstract:We demonstrate hybridly integrated narrow-linewidth, tunable diode lasers in the InP/GaAs-Si3N4 platform. Silicon nitride photonic integrated circuits, instead of silicon waveguides that suffer from high optical loss near 1 µm, are chosen to build a tunable external cavity for both InP and GaAs gain chips at the same time. Single frequency lasing at 1.55 µm and 1 µm is simultaneously obtained on a single chip with spectral linewidths of 18-kHz and 70-kHz, a side mode suppression ratio of 52 dB and 46 dB, and tuning range of 46 nm and 38 nm, respectively. The resulting dual-band narrow-linewidth diode lasers have potential for use in a variety of novel applications such as integrated difference-frequency generation, quantum photonics, and nonlinear optics.
InGaAsP/InP DFB Laser Array Monolithically Integrated with MMI Combiner and SOA

Li Ma,Hongliang Zhu,Minghua Chen,Can Zhang,Baojun Wang

DOI: https://doi.org/10.1117/12.999645

2012-01-01

Abstract:The monolithic integrated of four channel 1.55- μm range InGaAsP/InP distributed feedback lasers with a 4 × 1 multimode interference (MMI) optical combiner and semiconductor optical amplifier (SOA) using varied width ridge method, butt-joint technique and holographic exposure is proposed and demonstrated. The average output power and the threshold current are 1.8mW and 35mA, respectively, when the injection current of SOA is 100mA, with over 40-dB side mode suppression ratio (SMSR). The lasing wavelength is 1.55-μm range and 40dB sidemode suppression ratio (SMSR) is obtained. The four channels can operated separately or simultaneously.

InGaAsP/InP Dual Wavelength Bipolar Cascade Lasers with 100 Nm Wavelength Spacing

Mid-infrared Widely Tunable Single-Mode Interband Cascade Lasers Based on V-coupled Cavities.

Mode Selection in InGaAs/InGaAsP Quantum Well Photonic Crystal Lasers Based on Coupled Double-Heterostructure Cavities.

Widely Tunable Single-Mode Mid-Infrared Interband Cascade Lasers

Mid-infrared Tunable Interband Cascade Laser Employing Double-Trench Waveguide Structure with a Tuning Range of 118 Nm

Single-mode Interband Cascade Laser Based on V-coupled Cavity with 210 Nm Wavelength Tuning Range Near 3 Μm.

Intra-cavity Cascaded Pumped 912nm/1030 Nm Dual Wavelength Laser Output

Single Mode Operation of Short-Cavity Quantum Cascade Lasers

Quasi-Continuous Wavelength Tuning of Single-mode Interband Cascade Lasers Based on V-coupled Cavity

GaAs/AlGaAs tunable laser using Fabry-Perot filters based on half-wave coupled lossy deep etched trenches

GaAs/AlGaAs-Based 870-Nm-band Widely Tunable Edge-Emitting V-Cavity Laser

GaAs/AlGaAs quantum cascade lasers

Single-Electrode-Controlled 26x100ghz Wavelength Switching in V-Coupled-Cavity Semiconductor Laser

Widely Wavelength Switchable V-Coupled-Cavity Semiconductor Laser With Similar To 40 Db Side-Mode Suppression Ratio

Tunable dual-wavelength laser based on cascaded stimulated polariton scattering

Second-Order Distributed Feedback Quantum Cascade Lasers at 7.8μm

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers

Tunable dual-wavelength semiconductor laser based on indium-rich cluster quantum structure

Narrow-linewidth, tunable external cavity dual-band diode lasers through InP/GaAs-Si3N4 hybrid integration

InGaAsP/InP DFB Laser Array Monolithically Integrated with MMI Combiner and SOA