Abstract:Abstract Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN photonic integrated circuits (PICs), but are difficult to fully integrate with low-index SiN waveguides due to their large mismatch with the high-index III-V gain materials. The recent demonstration of multilayer heterogeneous integration provides a practical solution and enabled the first-generation of lasers fully integrated with SiN waveguides. However, a laser with high device yield and high output power at telecommunication wavelengths, where photonics applications are clustered, is still missing, hindered by large mode transition loss, non-optimized cavity design, and a complicated fabrication process. Here, we report high-performance lasers on SiN with tens of milliwatts output power through the SiN waveguide and sub-kHz fundamental linewidth, addressing all the aforementioned issues. We also show Hertz-level fundamental linewidth lasers are achievable with the developed integration techniques. These lasers, together with high- Q SiN resonators, mark a milestone towards a fully integrated low-noise silicon nitride photonics platform. This laser should find potential applications in LIDAR, microwave photonics and coherent optical communications.

Narrow-linewidth, tunable external cavity dual-band diode lasers through InP/GaAs-Si3N4 hybrid integration

Hybrid Integrated Narrow-Linewidth Semiconductor Lasers

Hybrid dual-gain tunable integrated InP-Si3N4 external cavity laser

Electro-optic tuning of a single-frequency ultranarrow linewidth microdisk laser

Mode Selection in InGaAs/InGaAsP Quantum Well Photonic Crystal Lasers Based on Coupled Double-Heterostructure Cavities.

Hybrid integrated Si3N4 external cavity laser with high power and narrow linewidth

Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

High-performance lasers for fully integrated silicon nitride photonics

The Wavelength Tuning Performance of Narrow Linewidth Laser-Diode Coupled to an External High-Q Si3N4 Micro-Ring Resonator

Widely tunable 2 $μ$m hybrid laser using GaSb semiconductor optical amplifiers and Si3N4 photonics integrated reflector

Hybrid InP-Si3N4 Tunable External Cavity Laser Achieving an Ultra-low Intrinsic Linewidth below 10 Hz

Single-Mode Narrow Linewidth Three-Section Coupled-Cavity Laser With Deeply Etched Trenches

Widely-tunable and narrow-linewidth hybrid-integrated diode laser at 637 nm

Tunable Self-Injected Fabry-Perot Laser Diode Coupled to an External High-Q Si3N4/SiO2 Micro-Ring Resonator

Photonic integrated circuits fabricated using quantum well intermixing

Compact and Low Power Consumption Hybrid Integrated Wavelength Tunable Laser Module Using Silicon Waveguide Resonators

Ultra-Narrow Linewidth Chip-Scale Heterogeneously Integrated Silicon/III-V Tunable Laser Pumped Si/Si3N4 SBS Laser

Optical and electrical properties of bandgap shifted 1.55-μm laser diodes

1.3 μm InAs/GaAs quantum-dot lasers grown on planar on-axis Si (001) substrates with high slope-efficiency and low differential resistance