Abstract:Photonic integrated lasers with an ultra-low fundamental linewidth and a high output power are important for precision atomic and quantum applications, high-capacity communications, and fiber sensing, yet wafer-scale solutions have remained elusive. Here we report an integrated stimulated Brillouin laser (SBL), based on a photonic molecule coupled resonator design, that achieves a sub-100-mHz fundamental linewidth with greater than 10-mW output power in the C band, fabricated on a 200-mm silicon nitride (Si3N4) CMOS-foundry compatible wafer-scale platform. The photonic molecule design is used to suppress the second-order Stokes (S2) emission, allowing the primary lasing mode to increase with the pump power without phase noise feedback from higher Stokes orders. The nested waveguide resonators have a 184 million intrinsic and 92 million loaded Q, over an order of magnitude improvement over prior photonic molecules, enabling precision resonance splitting of 198 MHz at the S2 frequency. We demonstrate S2-suppressed single-mode SBL with a minimum fundamental linewidth of 71±18 mHz, corresponding to a 23±6-mHz2/Hz white-frequency-noise floor, over an order of magnitude lower than prior integrated SBLs, with an ∼11-mW output power and 2.3-mW threshold power. The frequency noise reaches the resonator-intrinsic thermo-refractive noise from 2-kHz to 1-MHz offset. The laser phase noise reaches -155 dBc/Hz at 10-MHz offset. The performance of this chip-scale SBL shows promise not only to improve the reliability and reduce size and cost but also to enable new precision experiments that require the high-speed manipulation, control, and interrogation of atoms and qubits. Realization in the silicon nitride ultra-low loss platform is adaptable to a wide range of wavelengths from the visible to infrared and enables integration with other components for systems-on-chip solutions for a wide range of precision scientific and engineering applications including quantum sensing, gravitometers, atom interferometers, precision metrology, optical atomic clocks, and ultra-low noise microwave generation.

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Hybrid Integrated Narrow-Linewidth Semiconductor Lasers

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Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

Single-Mode Narrow Linewidth Three-Section Coupled-Cavity Laser With Deeply Etched Trenches

Tunable Self-Injected Fabry-Perot Laser Diode Coupled to an External High-Q Si3N4/SiO2 Micro-Ring Resonator

Sub-hertz fundamental linewidth photonic integrated Brillouin laser

Hybrid integrated Si3N4 external cavity laser with high power and narrow linewidth

Narrow Linewidth Tunable V-cavity Laser Using Self-Injection Method

Integrated electro-optically tunable narrow-linewidth III-V laser

E-band Widely Tunable, Narrow Linewidth Heterogeneous Laser on Silicon

Integrated photonic molecule Brillouin laser with a high-power sub-100-mHz fundamental linewidth

Sub-Hz Linewidth Photonic-Integrated Brillouin Laser

The Wavelength Tuning Performance of Narrow Linewidth Laser-Diode Coupled to an External High-Q Si3N4 Micro-Ring Resonator

Narrow Linewidth Semiconductor Lasers from Visible to Infrared Wavelengths

Widely tunable and narrow-linewidth chip-scale lasers from near-ultraviolet to near-infrared wavelengths

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Stabilized Brillouin laser with sub-Hz fundamental linewidth aided by frequency shifted optical injection locking