Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

E-band Widely Tunable, Narrow Linewidth Heterogeneous Laser on Silicon

Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

Electro-optic tuning of a single-frequency ultranarrow linewidth microdisk laser

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Ultra-Narrow Linewidth Chip-Scale Heterogeneously Integrated Silicon/III-V Tunable Laser Pumped Si/Si3N4 SBS Laser

Widely Tunable Electro-Absorption Modulated V-Cavity Laser

Tunable Quantum Dot Lasers Grown Directly on Silicon

Fiber-Integrated Reversibly Wavelength-Tunable Nanowire Laser Based on Nanocavity Mode Coupling.

C and L Bands Wavelength Tunable Laser with Silicon Photonic-wire Waveguide Micro-ring Resonators

Full C and L Bands Wavelength Tunable Laser Module with Silicon Micro-Ring Resonators

Integrated electro-optically tunable narrow-linewidth III-V laser

Hybrid integrated Si3N4 external cavity laser with high power and narrow linewidth

Wavelength Tunable Cavity Mirror for Silicon Micro-Ring-Based Hybrid Integrated Lasers

Scalable single-microring hybrid III-V/Si lasers for emerging narrow-linewidth applications

Sub-hertz fundamental linewidth photonic integrated Brillouin laser

The Wavelength Tuning Performance of Narrow Linewidth Laser-Diode Coupled to an External High-Q Si3N4 Micro-Ring Resonator

A Sub-kHz Narrow-Linewidth, and Hundred-mW High-Output-Power Silicon-Based Er Silicate Laser with Hybrid Pump and Signal Co-Resonant Cavity

1283-1460 nm continuously tunable, watt-level bismuth-doped phosphosilicate fiber laser and its frequency doubling to a visible laser

A fully hybrid integrated Erbium-based laser

Narrow Linewidth Semiconductor Lasers from Visible to Infrared Wavelengths

Narrow Linewidth Single Frequency Fiber Laser Based on High-Q Silicon Nitride Microring Reflector