Abstract:Erbium-doped fiber lasers exhibit high coherence and low noise as required for applications in fiber optic sensing, gyroscopes, LiDAR, and optical frequency metrology. Endowing Erbium-based gain in photonic integrated circuits can provide a basis for miniaturizing low-noise fiber lasers to chip-scale form factor, and enable large-volume applications. Yet, while major progress has been made in the last decade on integrated lasers based on silicon photonics with III-V gain media, the integration of Erbium lasers on chip has been compounded by large laser linewidth. Recent advances in photonic integrated circuit-based high-power Erbium-doped amplifiers, make a new class of rare-earth-ion-based lasers possible. Here, we demonstrate a fully integrated chip-scale Erbium laser that achieves high power, narrow linewidth, frequency agility, and the integration of a III-V pump laser. The laser circuit is based on an Erbium-implanted ultralow-loss silicon nitride Si$_3$N$4$ photonic integrated circuit. This device achieves single-mode lasing with a free-running intrinsic linewidth of 50 Hz, a relative intensity noise of $<$-150 dBc/Hz at $>$10 MHz offset, and output power up to 17 mW, approaching the performance of fiber lasers and state-of-the-art semiconductor extended cavity lasers. An intra-cavity microring-based Vernier filter enables wavelength tunability of $>$ 40 nm within the C- and L-bands while attaining side mode suppression ratio (SMSR) of $>$ 70 dB, surpassing legacy fiber lasers in tuning and SMRS performance. This new class of low-noise, tuneable Erbium waveguide laser could find applications in LiDAR, microwave photonics, optical frequency synthesis, and free-space communications. Our approach is extendable to other wavelengths, and more broadly, constitutes a novel way to photonic integrated circuit-based rare-earth-ion-doped lasers.

A Sub-kHz Narrow-Linewidth, and Hundred-mW High-Output-Power Silicon-Based Er Silicate Laser with Hybrid Pump and Signal Co-Resonant Cavity

Hybrid Integrated Narrow-Linewidth Semiconductor Lasers

A High-Power, High-Efficiency Hybrid Silicon-Based Erbium Silicate-Silicon Nitride Waveguide Laser

1.9 μm hybrid silicon/iii-v semiconductor laser

A fully hybrid integrated Erbium-based laser

Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Hybrid integrated Si3N4 external cavity laser with high power and narrow linewidth

High-gain Erbium Silicate Waveguide Amplifier and a Low-Threshold, High-Efficiency Laser.

Er Silicate Amplifers and Lasers for Silicon Photonics

Scalable single-microring hybrid III-V/Si lasers for emerging narrow-linewidth applications

Erbium Chloride Silicate-Based Vertical Cavity Surface-Emitting Laser at the Near-Infrared Communication Band.

Efficient Integrated Amplifier-Assisted Laser on Erbium-Doped Lithium Niobate

Narrow Linewidth Single Frequency Fiber Laser Based on High-Q Silicon Nitride Microring Reflector

A Fully Photonic Integrated Circuit-Based Erbium Laser

A single adiabatic microring-based laser in 220 nm silicon-on-insulator.

C- and L-band erbium-doped waveguide lasers with wafer-scale silicon nitride cavities

Ultra-Narrow Linewidth Chip-Scale Heterogeneously Integrated Silicon/III-V Tunable Laser Pumped Si/Si3N4 SBS Laser

Sub-100 Hz Intrinsic Linewidth 852 nm Silicon Nitride External Cavity Laser

High Power On-Chip Integrated Laser