Erbium Chloride Silicate-Based Vertical Cavity Surface-Emitting Laser at the Near-Infrared Communication Band.

Hepeng Zhao,Xinchao Zhao,Xuehong Zhang,Zhuangzhuang Cui,Yu Ou-Yang,Maobin Xie,Min Zheng,Xueyu Guan,Lijun Wu,Xinglei Zhou,Lihui Li,Yushuang Zhang,Yang Li,Ying Jiang,Wei Lu,Xiaoli Zhu,Chao Peng,Xiao Wang,Shaowei Wang,Xiujuan Zhuang
DOI: https://doi.org/10.1364/ol.446752
2022-01-01
Abstract:Silicon-based integrated optoelectronics has become a hotspot in the field of computers and information processing systems. An integrated coherent light source on-chip with a small footprint and high efficiency is one of the most important unresolved devices. Here, we realize a silicon-based vertical cavity surface-emitting laser in the near-infrared communication band by making efforts in both controlled preparation of high-gain erbium silicate materials and novel design of high optical feedback microcavity. Single-crystal erbium/ytterbium silicate microplates with erbium concentration as high as 5 × 1021 cm-3 are controlled prepared by a chemical vapor deposition method. They can produce strong luminescence with quite a long lifetime (2.3 ms) at the wavelength of 1.5 μm. By embedding the erbium silicate microplates between two dielectric Bragg reflectors, we construct a vertical cavity surface-emitting laser at 1.5 μm, with a lasing threshold as low as 20 μJ/cm2 and Q factor of nearly 2000. Our study provides a new pathway to achieve a sub-micrometer coherent light source for optical communication.
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