Abstract:Erbium-doped fiber lasers exhibit high coherence and low noise as required for applications in fiber optic sensing, gyroscopes, LiDAR, and optical frequency metrology. Endowing Erbium-based gain in photonic integrated circuits can provide a basis for miniaturizing low-noise fiber lasers to chip-scale form factor, and enable large-volume applications. Yet, while major progress has been made in the last decade on integrated lasers based on silicon photonics with III-V gain media, the integration of Erbium lasers on chip has been compounded by large laser linewidth. Recent advances in photonic integrated circuit-based high-power Erbium-doped amplifiers, make a new class of rare-earth-ion-based lasers possible. Here, we demonstrate a fully integrated chip-scale Erbium laser that achieves high power, narrow linewidth, frequency agility, and the integration of a III-V pump laser. The laser circuit is based on an Erbium-implanted ultralow-loss silicon nitride Si$_3$N$4$ photonic integrated circuit. This device achieves single-mode lasing with a free-running intrinsic linewidth of 50 Hz, a relative intensity noise of $<$-150 dBc/Hz at $>$10 MHz offset, and output power up to 17 mW, approaching the performance of fiber lasers and state-of-the-art semiconductor extended cavity lasers. An intra-cavity microring-based Vernier filter enables wavelength tunability of $>$ 40 nm within the C- and L-bands while attaining side mode suppression ratio (SMSR) of $>$ 70 dB, surpassing legacy fiber lasers in tuning and SMRS performance. This new class of low-noise, tuneable Erbium waveguide laser could find applications in LiDAR, microwave photonics, optical frequency synthesis, and free-space communications. Our approach is extendable to other wavelengths, and more broadly, constitutes a novel way to photonic integrated circuit-based rare-earth-ion-doped lasers.

Self-Amplification-Assisted Highly Efficient Integrated Laser

Efficient Integrated Amplifier-Assisted Laser on Erbium-Doped Lithium Niobate

Hybrid Integrated Narrow-Linewidth Semiconductor Lasers

A fully hybrid integrated Erbium-based laser

On-chip Lithium Niobate Heterogeneous Photonic Crystal Nanocavity Laser

On-chip erbium-doped lithium niobate microcavity laser and spiral waveguide amplifier

High Power On-Chip Integrated Laser

Recent Progresses on Hybrid Lithium Niobate External Cavity Semiconductor Lasers

Integrated Pockels laser

Electrically-pumped high-power laser transmitter integrated on thin-film lithium niobate

High Power and High Efficiency On-Chip Integrated Laser

Self‐Injection Locked Frequency Conversion Laser

High-performance lasers for fully integrated silicon nitride photonics

Self-injection-locked second-harmonic integrated source

A Sub-kHz Narrow-Linewidth, and Hundred-mW High-Output-Power Silicon-Based Er Silicate Laser with Hybrid Pump and Signal Co-Resonant Cavity

A photonic integrated circuit based erbium-doped amplifier

Hybrid Integrated Laser Emission Module with DFB Laser Diode and Thin-Film LiNbO3 Modulator

A photonic integrated circuit–based erbium-doped amplifier

A 4.8-kW high-efficiency 1050-nm monolithic fiber laser amplifier employing a pump-sharing structure

On-chip erbium-doped lithium niobate microring lasers