A photonic integrated circuit–based erbium-doped amplifier

Yang Liu,Zheru Qiu,Xinru Ji,Anton Lukashchuk,Jijun He,Johann Riemensberger,Martin Hafermann,Rui Ning Wang,Junqiu Liu,Carsten Ronning,Tobias J. Kippenberg
DOI: https://doi.org/10.1126/science.abo2631
IF: 56.9
2022-06-17
Science
Abstract:Erbium-doped fiber amplifiers revolutionized long-haul optical communications and laser technology. Erbium ions could provide a basis for efficient optical amplification in photonic integrated circuits but their use remains impractical as a result of insufficient output power. We demonstrate a photonic integrated circuit–based erbium amplifier reaching 145 milliwatts of output power and more than 30 decibels of small-signal gain—on par with commercial fiber amplifiers and surpassing state-of-the-art III-V heterogeneously integrated semiconductor amplifiers. We apply ion implantation to ultralow–loss silicon nitride (Si 3 N 4 ) photonic integrated circuits, which are able to increase the soliton microcomb output power by 100 times, achieving power requirements for low-noise photonic microwave generation and wavelength-division multiplexing optical communications. Endowing Si 3 N 4 photonic integrated circuits with gain enables the miniaturization of various fiber-based devices such as high–pulse-energy femtosecond mode-locked lasers.
multidisciplinary sciences
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