Abstract:Integrated photonics requires high gain optical materials in the telecom wavelength range for optical amplifiers and coherent light sources. Erbium (Er) containing materials are ideal candidates due to the 1.5 μm emission from Er3+ ions. However, the Er density in typical Er-doped materials is less than 1020 cm–3, thus limiting the maximum optical gain to a few dB/cm, too small to be useful for integrated photonic applications. Er compounds could potentially solve this problem since they contain much higher Er3+ density. So far the existing Er compounds suffer from short lifetime and strong upconversion effects, mainly due to poor crystal qualities. Recently, we explore a new Er compound: erbium chloride silicate (ECS, Er3(SiO4)2Cl) in the form of nanowire, which facilitates the growth of high quality single crystal with relatively large Er3+ density (1.62 × 1022 cm–3). Previous optical results show that the high crystal quality of ECS material leads to a long lifetime up to 1 ms. The Er lifetime-density product was found to be the largest among all the Er containing materials. Pump-probe experiments demonstrated a 644 dB/cm signal enhancement and 30 dB/cm net gain per unit length from a single ECS wire. As a result, such high-gain ECS nanowires can be potentially fabricated into ultra-compact lasers. Even though a single ECS nanowire naturally serves as good waveguide, additional feedback mechanism is needed to form an ultra-compact laser. In this work, we demonstrate the direct fabrication of 1D photonic crystal (PhC) air hole array structure on a single ECS nanowire using focused ion beam (FIB). Transmission measurement shows polarization-dependent stop-band behavior. For transverse electric (TE) polarization, we observed stop-band suppression as much as 12 dB with a 9 μm long airholed structure. Through numerical simulation, we showed that Q-factor as high as 11000 can be achieved at 1.53 μm for a 1D PhC micro-cavity on an ECS nanowire. Such a high Q cavity combined with the high material gain of ECS nanowires provides an attractive solution for ultra-compact lasers, an important goal of this research.

A low-fabrication-temperature, high-gain chip-scale waveguide amplifier

A Low-Fabrication-Temperature Erbium-Based Waveguide Amplifier

High-gain Erbium Silicate Waveguide Amplifier and a Low-Threshold, High-Efficiency Laser.

Erbium-ytterbium co-doped aluminium oxide waveguide amplifiers fabricated by reactive co-sputtering and wet chemical etching

High on-chip gain spiral Al2O3:Er3+ waveguide amplifiers

Er–Tm co-doped materials for on-chip ultra-broadband waveguide amplifier

Erbium-doped Ga2O3 waveguide for optical amplification

E r silicate nanowire light source for silicon photonics

Design Of An On-Chip Electrically Driven, Position-Adapted, Fully Integrated Erbium-Based Waveguide Amplifier For Silicon Photonics

Hybrid ${\rm Si}_{3}{\rm N}_{4}\hbox{-}{\rm Er}/{\rm Yb}$ Silicate Waveguides for Amplifier Application

Toward a10 dB net-gain waveguide amplifier in an Er3+-Yb3+ co-doped phosphate glass

Optical Amplification in Er/Yb Silicate Strip Loaded Waveguide

Erbium-ytterbium codoped thin-film lithium niobate integrated waveguide amplifier with 27 dB internal net gain

Toward a 10 Db Net-Gain Waveguide Amplifier in an Er3+-Yb3+ Co-Doped Phosphate Glass

Erbium-ytterbium codoped thin-film lithium niobate integrated waveguide amplifier with a 27 dB internal net gain

Synthesis and study of novel erbium-doped La2O3-Al2O3 glasses for on-chip waveguide amplifier

Single Crystal Erbium Compound Nanowires As High Gain Material for On-Chip Light Source Applications

Study on Er3+-Yb3+ co-doped La2O3–Al2O3 glasses for C-band optical waveguide amplifier with high luminous efficiency and low pump threshold

Erbium Silicate Compound Optical Waveguide Amplifier and Laser [Invited]

Efficient erbium-doped thin-film lithium niobate waveguide amplifiers

A photonic integrated circuit based erbium-doped amplifier