Hybrid InP-Si3N4 Tunable External Cavity Laser Achieving an Ultra-low Intrinsic Linewidth below 10 Hz

Yilin Wu,Shuai Shao,Sigang Yang,Hongwei Chen,Hui Wang,Minghua Chen

DOI: https://doi.org/10.1364/cleo_at.2024.jth2a.88

2024-01-01

Abstract:A hybrid InP-Si3N4 tunable external cavity laser is demonstrated. It achieves an ultra-low intrinsic linewidth below 10 Hz over the full C-band, featuring a record lowest value of 6.06 Hz.

What problem does this paper attempt to address?

Hybrid integrated tunable external cavity laser with sub-10 Hz intrinsic linewidth

Yilin Wu,Shuai Shao,Liwei Tang,Sigang Yang,Hongwei Chen,Minghua Chen

DOI: https://doi.org/10.1063/5.0190696

IF: 5.6

2024-02-01

APL Photonics

Abstract:In this work, a hybrid integrated tunable external cavity laser (ECL) with a sub-10 Hz intrinsic linewidth is demonstrated. In this hybrid ECL, two Si3N4-based subwavelength hole defect assisted microring resonators, acting as high-Q laser reflectors, are butt-coupled with a chip-scale semiconductor optical amplifier at the two edges, respectively. The experimental results show that the hybrid ECL achieves a sub-10 Hz intrinsic linewidth across a wavelength tuning range from 1525 to 1565 nm, featuring a record lowest value of 6.06 Hz. The demonstrated hybrid ECL opens up opportunities toward the applications of high-speed optical communications and high-resolution light detection and ranging.

optics,physics, applied
Electro-optic tuning of a single-frequency ultranarrow linewidth microdisk laser

Jintian Lin,Saeed Farajollahi,Zhiwei Fang,Ni Yao,Renhong Gao,Jianglin Guan,Li Deng,Tao Lu,Min Wang,Haisu Zhang,Wei Fang,Lingling Qiao,Ya Cheng

DOI: https://doi.org/10.1117/1.AP.4.3.036001

IF: 13.582

2022-01-01

Advanced Photonics

Abstract:Single-frequency ultranarrow linewidth on-chip microlasers with a fast wavelength tunability play a game-changing role in a broad spectrum of applications ranging from coherent communication, light detection and ranging, to metrology and sensing. Design and fabrication of such light sources remain a challenge due to the difficulties in making a laser cavity that has an ultrahigh optical quality (Q) factor and supports only a single lasing frequency simultaneously. Here, we demonstrate a unique single-frequency ultranarrow linewidth lasing mechanism on an erbium ion-doped lithium niobate (LN) microdisk through simultaneous excitation of high-Q polygon modes at both pump and laser wavelengths. As the polygon modes are sparse within the optical gain bandwidth compared with the whispering gallery mode counterpart, while their Q factors (above 10 million) are even higher due to the significantly reduced scattering on their propagation paths, single-frequency lasing with a linewidth as narrow as 322 Hz is observed. The measured linewidth is three orders of magnitude narrower than the previous record in on-chip LN microlasers. Finally, enabled by the strong linear electro-optic effect of LN, real-time electro-optical tuning of the microlaser with a high tuning efficiency of similar to 50 pm/100 V is demonstrated.
Hybrid Integrated Narrow-Linewidth Semiconductor Lasers

Baoshuai Li,Weiqiang Wang,Honglei Yang,Hao Liu,Sai T. Chu,Brent Little,Yuxia Song,Boren Guan,Wenfu Zhang,Mingyu Li

DOI: https://doi.org/10.1364/ao.486492

IF: 1.9

2023-01-01

Applied Optics

Abstract:Integrated narrow-linewidth lasers are the key devices in compact coherent optical systems of metrology, sensing, and optical microwave generation. Here, we demonstrate a hybrid integrated laser based on an optical negative feedback scheme. The laser is composed of a commercial distributed feedback (DFB) laser diode and an on-chip micro-resonator with a Q-factor of 0.815 million. The feedback optical field is coupled back to the laser cavity through the back facet. Therefore, the laser can maintain the lasing efficiency of the DFB laser diode. The linewidth of the DFB laser diode is compressed from 2 MHz to 6 kHz, corresponding to the linewidth reduction factor of 25.2 dB. The theoretical result shows that the laser performance still has a huge improvement margin through precise control of the detuning between laser frequency and the micro-resonator, as well as the phase delay of the feedback optical field. The hybrid narrow-linewidth laser diode has wide application prospects in coherent optical systems benefitting from the low cost and volume productivity.
Hybrid integrated Si3N4 external cavity laser with high power and narrow linewidth

Chen Chen,Fang Wei,Xiuyou Han,Qingshuai Su,Haoyang Pi,Guofeng Xin,Huimin Wu,Anton Stroganov,Yanguang Sun,Weijie Ren,Xiao Chen,Qing Ye,Haiwen Cai,Weibiao Chen

DOI: https://doi.org/10.1364/OE.487850

2023-07-31

Abstract:We have designed and fabricated a hybrid integrated laser source with full C-band wavelength tunability and high-power output. The external cavity laser is composed of a gain chip and a dual micro-ring narrowband filter integrated on the silicon nitride photonic chip to achieve a wavelength tuning range of 55 nm and a SMSR higher than 50 dB. Through the integration of the semiconductor optical amplifier in the miniaturized package, the laser exhibits an output power of 220 mW and linewidth narrower than 8 kHz over the full C-band. Such a high-power, narrow-linewidth laser diode with a compact and low-cost design could be applied whenever coherence and interferometric resolutions are needed, such as silicon optical coherent transceiver module for space laser communication, light detection and ranging (LiDAR).
Single-Mode Narrow Linewidth Three-Section Coupled-Cavity Laser With Deeply Etched Trenches

Yin Wang,Sen Zhang,Youguang Yang,Lei Wang,Jian-Jun He

2012-01-01

Abstract:We present the design, fabrication and measurement results of a narrow Iinewidth single-mode laser based on three coupled cavities with two deeply etched trenches. Very narrow Iinewidth of about 78kHz is obtained. Good performances in lasing threshold and side-mode suppression ratio (SMSR) are also demonstrated.
A hybrid-integrated external cavity laser with ultra-wide wavelength tuning range and high side-mode suppression

Yuyao Guo,Xinhang Li,Weihan Xu,Chuxin Liu,Minhui Jin,Liangjun Lu,Jingya Xie,Anton Stroganov,Jianping Chen,Linjie Zhou

DOI: https://doi.org/10.1364/ofc.2022.tu3d.4

2022-01-01

Abstract:We present a III-V/Si3N4 hybrid-integrated tunable laser. The laser shows a record of similar to 170-nm tuning range with a side mode suppression ratio above 64 dB and an intrinsic linewidth below 2.8 kHz. (C) 2022 The Author(s)
Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

Jia Xu Brian Sia,Xiang Li,Wanjun Wang,Zhongliang Qiao,Xin Guo,Jin Zhou,Callum G. Littlejohns,Chongyang Liu,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1364/oe.400666

IF: 3.8

2020-01-01

Optics Express

Abstract:The wavelength region about of 1650 nm enables pervasive applications. Some instances include methane spectroscopy, free-space/fiber communications, LIDAR, gas sensing (i.e. C2H2, C2H4, C3H8), surgery and medical diagnostics. In this work, through the hybrid integration between an III-V optical amplifier and an extended, low-loss wavelength tunable silicon Vernier cavity, we report for the first time, a III-V/silicon hybrid wavelength-tunable laser covering the application-rich wavelength region of 1647-1690 nm. Room-temperature continuous wave operation is achieved with an output power of up to 31.1 mW, corresponding to a maximum side-mode suppression ratio of 46.01 dB. The laser is ultra-coherent, with an estimated linewidth of 0.7 kHz, characterized by integrating a 35 km-long recirculating fiber loop into the delayed self-heterodyne interferometer setup. The laser linewidth is amongst the lowest in hybrid/heterogeneous III-V/silicon lasers.
Narrow Linewidth Tunable V-cavity Laser Using Self-Injection Method

Xiaohai Xiong,Zhipeng Hu,Sen Zhang,Xiaolu Liao,Jian-Jun He

DOI: https://doi.org/10.1364/oe.25.032957

IF: 3.8

2017-01-01

Optics Express

Abstract:A widely tunable V-cavity semiconductor laser with kilohertz linewidth is demonstrated using simple self-injection method. The tunable laser is packaged into a small-form-factor 9-pin TOSA and can be tuned over 22 channels at 100 GHz spacing with side mode suppression ratios over 36 dB. Self-injection method is used for linewidth reduction by applying optical feedback. Linewidth of the V-cavity laser can be compressed from several megahertz to tens of kilohertz. The linewidth reduction method is essentially channel independent and can be easily realized. It can meet the requirements of many applications such as high-order modulation, coherent communication and sensing. (C) 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Tunable Ultra‐Narrow Linewidth Light Source Through Liquid Crystal‐Assisted Mini‐Bound‐States‐In‐Continuum Cavities

Renjie Tang,Yiting Wang,Jialing Jian,Zezhao Ju,Yalan Si,Jianghong Wu,Yuting Ye,Yilin Shi,Kangjian Bao,Yingchun Wu,Yiheng Tang,Chunlei Sun,Dawei Gao,Hongtao Lin,Lan Li

DOI: https://doi.org/10.1002/adom.202401592

IF: 9

2024-01-01

Advanced Optical Materials

Abstract:The introduction of liquid crystals into microcavities has garnered considerable attention for their exceptional tunability and high sensitivity to external perturbation factors within their distinct phase states. Here, a novel light source with both wavelength tunability and an exceptionally narrow linewidth is presented. This innovation is realized by strategically manipulating LC molecules, transitioning them from a well-aligned state to a disordered state with increasing temperature. The microcavity is tailored to support bound states in the continuum, a cutting-edge concept in photonic research that allows for light localization with minimal loss. In the pursuit of potential biocompatibility and to reduce cytotoxicity, indium phosphide colloid quantum dots are opted to serve as the emissive carriers within the system. An ultra-narrow linewidth light emission of 0.039 nm is observed, corresponding to a quality factor reaching 16668, along with a tunable range of 1.21 nm and a temperature sensitivity of 33.52 pm K-1. The invention's compact size and tunable character make it an ideal candidate for a variety of potential applications, such as eco-friendly sensors with minimal ecological impact, optical modulators with precise control over light, and adaptable photonic devices that can be integrated with a diverse array of materials and configurations. A tunable ultra-narrow linewidth light emission from a liquid-crystal-based photonic crystal cavity is experimentally demonstrated. The article thoroughly studies the design of cavities, ultra-narrow linewidth light sources based on InP quantum dot, and liquid crystal-assisted wavelength tuning. The devices exhibit a quality factor of 16 668, a sensitivity of 33.52 pm K-1, and a total tuning range of 25.7 nm. image
High-performance III-V/Si3N4 O-band External Cavity Tunable Laser

Yuyao Guo,Xinhang Li,Minhui Jin,Chuxin Liu,Weihan Xu,Liangjun Lu,Jingya Xie,Jianping Chen,Linjie Zhou

DOI: https://doi.org/10.1364/cleo_si.2022.sm2p.5

2022-01-01

Abstract:We present a III-V/Si 3 N 4 O-band hybrid laser, which shows a high output power of 42 mW, wide tuning range of 62 nm with side-mode suppression ratio >50 dB, and narrow intrinsic linewidth of ~600 Hz.
Hybrid dual-gain tunable integrated InP-Si3N4 external cavity laser

Ruiling Zhao,Yuyao Guo,Liangjun Lu,Muhammad Shemyal Nisar,Jianping Chen,Linjie Zhou

DOI: https://doi.org/10.1364/OE.416398

2021-03-29

Abstract:We present a hybrid dual-gain integrated external cavity laser with full C-band wavelength tunability. Two parallel reflective semiconductor optical amplifier gain channels are combined by a Y-branch in the Si3N4 photonic circuit to increase the optical gain. A Vernier ring filter is integrated in the Si3N4 photonic circuit to select a single longitudinal mode and meanwhile reduce the laser linewidth. The side-mode suppression ratio is ∼67 dB with a pump current of 75 mA. The linewidth of the unpackaged laser is 6.6 kHz under on-chip output power of 23.5 mW. The dual-gain operation of the laser gives higher output power and narrower linewidth compared to the single gain operation. It is promising for applications in optical communications and light detection and ranging systems.
The Wavelength Tuning Performance of Narrow Linewidth Laser-Diode Coupled to an External High-Q Si3N4 Micro-Ring Resonator

Qi Jing,Jiachen Li,Baoyu Zhang,Yu Li,Sigang Yang,Hongwei Chen,Minghua Chen

DOI: https://doi.org/10.1117/12.2600771

2021-01-01

Abstract:A hybrid integrated tunable narrow-linewidth laser is demonstrated in this paper. The hybrid laser comprises a commercial DFB laser butt-coupled to an external cavity with a micro-ring resonator. A transfer matrix model has been presented and the wavelength performance of the laser has been analyzed. In the experiment, the hybrid laser Lorentzian linewidth is ~5KHz and the tuning range is ~2.75 nanometer.
Hybrid integrated Si_3N_4 external cavity laser with high power and narrow linewidth

Chen Chen,Fang Wei,Xiuyou Han,Qingshuai Su,Haoyang Pi,Guofeng Xin,Huimin Wu,Anton Stroganov,Yanguang Sun,Weijie Ren,Xiao Chen,Qing Ye,Haiwen Cai,Weibiao Chen,qing ye

DOI: https://doi.org/10.1364/oe.487850

IF: 3.8

2023-07-22

Optics Express

Abstract:Chen Chen, Fang Wei, Xiuyou Han, Qingshuai Su, Haoyang Pi, Guofeng Xin, Huimin Wu, Anton Stroganov, Yanguang Sun, Weijie Ren, Xiao Chen, Qing Ye, Haiwen Cai, Weibiao Chen We have designed and fabricated a hybrid integrated laser source with full C-band wavelength tunability and high-power output. The external ... [Opt. Express 31, 26078-26091 (2023)]

optics
Sub-100 Hz Intrinsic Linewidth 852 nm Silicon Nitride External Cavity Laser

Hani Nejadriahi,Eric Kittlaus,Debapam Bose,Nitesh Chauhan,Jiawei Wang,Mathieu Fradet,Mahmood Bagheri,Andrei Isichenko,David Heim,Siamak Forouhar,Daniel Blumenthal

2024-10-05

Abstract:We demonstrate an external cavity laser with intrinsic linewidth below 100 Hz around an operating wavelength of 852 nm, selected for its relevance to laser cooling and manipulation of cesium atoms. This system achieves a maximum CW output power of 24 mW, wavelength tunability over 15 nm, and a side-mode suppression ratio exceeding 50 dB. This performance level is facilitated by careful design of a low-loss integrated silicon nitride photonic circuit serving as the external cavity combined with commercially available semiconductor gain chips. This approach demonstrates the feasibility of compact integrated lasers with sub-kHz linewidth centering on the needs of emerging sensor concepts based on ultracold atoms and can be further extended to shorter wavelengths via selection of suitable semiconductor gain media.

Optics,Applied Physics,Quantum Physics
Hybrid External Cavity Laser with a 160-Nm Tuning Range

Yuyao Guo,Linjie Zhou,Gangqiang Zhou,Ruiling Zhao,Liangjun Lu,Jianping Chen

DOI: https://doi.org/10.1364/cleo_si.2020.stu3m.2

2020-01-01

Abstract:We present a hybrid laser by using an InP reflective semiconductor optical amplifier chip butt-coupled with a SiN tunable reflector chip. The laser wavelength tuning range is 160 nm and the linewidth is 30 kHz.
Narrow-linewidth, tunable external cavity dual-band diode lasers through InP/GaAs-Si3N4 hybrid integration

Yeyu Zhu,Lin Zhu

DOI: https://doi.org/10.1364/OE.27.002354

2019-02-04

Abstract:We demonstrate hybridly integrated narrow-linewidth, tunable diode lasers in the InP/GaAs-Si3N4 platform. Silicon nitride photonic integrated circuits, instead of silicon waveguides that suffer from high optical loss near 1 µm, are chosen to build a tunable external cavity for both InP and GaAs gain chips at the same time. Single frequency lasing at 1.55 µm and 1 µm is simultaneously obtained on a single chip with spectral linewidths of 18-kHz and 70-kHz, a side mode suppression ratio of 52 dB and 46 dB, and tuning range of 46 nm and 38 nm, respectively. The resulting dual-band narrow-linewidth diode lasers have potential for use in a variety of novel applications such as integrated difference-frequency generation, quantum photonics, and nonlinear optics.
Linewidth Compression of a Widely Tunable Hybrid Laser Through High-Q Resonance Feedback

Siyu E,Xinhang Li,Yuyao Guo,Yihao Fan,Minhui Jin,Yu Li,Anton Stroganov,Liangjun Lu,Jianping Chen,Linjie Zhou

DOI: https://doi.org/10.1364/cleo_si.2024.sth4o.1

2024-01-01

Abstract:We present a III-V/Si3N4 widely tunable hybrid laser with an intrinsic linewidth of 50 Hz by using a resonance feedback from a high-Q ring resonator. The linewidth is reduced by approximately 24 fold.
Reducing the Linewidth of Hybrid Integrated III-V/silicon Laser by Utilizing High-Q Multimode-Waveguide-based Silicon Ring Resonator

Xinhang Li,Yuyao Guo,E. Siyu,Yihao Fan,Minhui Jin,Weihan Xu,Liangjun Lu,Yu Li,Jianping Chen,Linjie Zhou

DOI: https://doi.org/10.1364/ofc.2024.m1d.5

2024-01-01

Abstract:We demonstrate a hybrid integrated self-injection locking laser (SIL) with an intrinsic linewidth of 1.25 kHz and an external cavity laser ( ECL) of 5.3 kHz by leveraging a high-Q multimode-waveguide-based silicon microring resonator (MRR). (c) 2024 The Author(s)
Ultra-Narrow Linewidth Chip-Scale Heterogeneously Integrated Silicon/III-V Tunable Laser Pumped Si/Si3N4 SBS Laser

Grant M. Brodnik,Songtao Liu,Mark W. Harrington,Debapam Bose,Minh A. Tran,Duanni Huang,Joel Guo,Lin Chang,Paul A. Morton,John E. Bowers,Daniel J. Blumenthal

DOI: https://doi.org/10.1364/cleo_si.2020.stu3m.5

2020-01-01

Abstract:We demonstrate a chip-scale ultra-narrow-linewidth stimulated Brillouin scattering laser pumped by a narrow-linewidth, tunable silicon/III-V laser. Reduction of ~600x in fundamental linewidth (1.1kHz to 1.8Hz) and ~9x in integral linewidth (110kHz to 12kHz) is achieved.
Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Jia Xu Brian Sia,Wanjun Wang,Zhongliang Qiao,Xiang Li,Xin Guo,Jin Zhou,Callum G. Littlejohns,Zecen Zhang,Chongyang Liu,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1364/oe.383524

IF: 3.8

2020-01-01

Optics Express

Abstract:In recent years, the 2 µm waveband has been gaining significant attention due to its potential in the realization of several key technologies, specifically, future long-haul optical communications near the 1.9 µm wavelength region. In this work, we present a hybrid silicon photonic wavelength-tunable diode laser with an operating range of 1881-1947 nm (66 nm) for the first time, providing good compatibility with the hollow-core photonic bandgap fiber and thulium-doped fiber amplifier. Room-temperature continuous-wave operation was achieved with a favorable on-chip output power of 28 mW. Stable single-mode lasing was observed with side-mode suppression ratio up to 35 dB. Besides the abovementioned potential applications, the demonstrated wavelength region will find critical purpose in H2O spectroscopic sensing, optical logic, signal processing as well as enabling the strong optical Kerr effect on Si.

Hybrid InP-Si3N4 Tunable External Cavity Laser Achieving an Ultra-low Intrinsic Linewidth below 10 Hz

Hybrid integrated tunable external cavity laser with sub-10 Hz intrinsic linewidth

Electro-optic tuning of a single-frequency ultranarrow linewidth microdisk laser

Hybrid Integrated Narrow-Linewidth Semiconductor Lasers

Hybrid integrated Si3N4 external cavity laser with high power and narrow linewidth

Single-Mode Narrow Linewidth Three-Section Coupled-Cavity Laser With Deeply Etched Trenches

A hybrid-integrated external cavity laser with ultra-wide wavelength tuning range and high side-mode suppression

Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

Narrow Linewidth Tunable V-cavity Laser Using Self-Injection Method

Tunable Ultra‐Narrow Linewidth Light Source Through Liquid Crystal‐Assisted Mini‐Bound‐States‐In‐Continuum Cavities

High-performance III-V/Si3N4 O-band External Cavity Tunable Laser

Hybrid dual-gain tunable integrated InP-Si3N4 external cavity laser

The Wavelength Tuning Performance of Narrow Linewidth Laser-Diode Coupled to an External High-Q Si3N4 Micro-Ring Resonator

Hybrid integrated Si_3N_4 external cavity laser with high power and narrow linewidth

Sub-100 Hz Intrinsic Linewidth 852 nm Silicon Nitride External Cavity Laser

Hybrid External Cavity Laser with a 160-Nm Tuning Range

Narrow-linewidth, tunable external cavity dual-band diode lasers through InP/GaAs-Si3N4 hybrid integration

Linewidth Compression of a Widely Tunable Hybrid Laser Through High-Q Resonance Feedback

Reducing the Linewidth of Hybrid Integrated III-V/silicon Laser by Utilizing High-Q Multimode-Waveguide-based Silicon Ring Resonator

Ultra-Narrow Linewidth Chip-Scale Heterogeneously Integrated Silicon/III-V Tunable Laser Pumped Si/Si3N4 SBS Laser

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm