Abstract:Combining optical gain in direct-bandgap III-V materials with tunable optical feedback offered by advanced photonic integrated circuits is key to chip-scale external-cavity lasers (ECL), offering wideband tunability along with low optical linewidths. External feedback circuits can be efficiently implemented using low-loss silicon nitride (Si$_{3}$N$_{4}$) waveguides, which do not suffer from two-photon absorption and can thus handle much higher power levels than conventional silicon photonics. However, co-integrating III-V-based gain elements with tunable external feedback circuits in chip-scale modules still represents a challenge, requiring either technologically demanding heterogeneous integration techniques or costly high-precision multi-chip assembly. In this work, we demonstrate Si$_{3}$N$_{4}$-based hybrid integrated ECL that exploit 3D-printed structures such as intra-cavity photonic wire bonds and facet-attached microlenses for low-loss optical coupling with relaxed alignment tolerances, thereby overcoming the need for active alignment while maintaining the full flexibility of multi-chip integration techniques. In a proof-of-concept experiment, we demonstrate an ECL offering a 90 nm tuning range (1480 nm - 1570 nm) with on-chip output powers above 12 dBm and side-mode suppression ratios of up to 59 dB. We achieve an intrinsic linewidth of 979 Hz, which is among the lowest values reported for comparable feedback architectures. The optical loss of the intra-cavity photonic wire bond between the III-V gain element and the Si$_{3}$N$_{4}$-based tunable feedback circuit amounts to approximately (1.6 $\pm$ 0.2) dB. We use the ECL as a tunable pump laser to generate a dissipative Kerr soliton frequency comb. To the best of our knowledge, our experiments represent the first demonstration of a single-soliton Kerr comb generated with a pump that is derived from a hybrid ECL.

Hybrid integrated tunable external cavity laser with sub-10 Hz intrinsic linewidth

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Hybrid InP-Si3N4 Tunable External Cavity Laser Achieving an Ultra-low Intrinsic Linewidth below 10 Hz

Hybrid Integrated Narrow-Linewidth Semiconductor Lasers

Electro-optic tuning of a single-frequency ultranarrow linewidth microdisk laser

Complementary-Tuning-Enabled Hybrid III-V/Si3N4 Dual External Cavity Laser Combines Wide Tunability and Frequency Agility

Hybrid integrated Si3N4 external cavity laser with high power and narrow linewidth

Sub-kHz-linewidth external-cavity laser (ECL) with Si$_{3}$N$_{4}$ resonator used as a tunable pump for a Kerr frequency comb

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Widely tunable, narrow linewidth external-cavity gain chip laser for spectroscopy between 1.0 - 1.1 um

Robust hybrid laser linewidth reduction using Si<sub>3</sub>N<sub>4</sub>-based subwavelength hole defect assisted microring reflector

Hybrid external-cavity lasers (ECL) using photonic wire bonds as coupling elements

The Wavelength Tuning Performance of Narrow Linewidth Laser-Diode Coupled to an External High-Q Si3N4 Micro-Ring Resonator

Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

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Sub-100 Hz Intrinsic Linewidth 852 nm Silicon Nitride External Cavity Laser

Hybrid dual-gain tunable integrated InP-Si3N4 external cavity laser

Single-Mode Narrow Linewidth Three-Section Coupled-Cavity Laser With Deeply Etched Trenches

Hybrid Integrated Frequency-Modulated Continuous-Wave Laser With Synchronous Tuning

Hybrid integrated Si_3N_4 external cavity laser with high power and narrow linewidth

Tunable V-Coupled-Cavity Semiconductor Laser Monolithically Integrated with Monitoring Photodiodes Using Deeply Etched Reflective Trenches