Abstract:Integrated external cavity lasers (ECLs) are emerging as a promising chip-scale implementation of tunable lasers, promoting system miniaturization and functionality expansion with the booming of silicon photonics. In spite of the extensive exploration and great progresses on ECLs, challenge remains in the combination of wide tunability and frequency agility. Here we address this problem by proposing a hybrid III-V/Si 3 N 4 dual external cavity laser (DECL) with complementary tuning. The hybrid DECL consists of two Si 3 N 4 -based external cavities butt-coupled with a semiconductor optical amplifier at each side. On the two external cavities, complementary high-efficiency thermal-optic tuning and fast photoelastic tuning are employed, respectively. The experimentally demonstrated hybrid DECL leverages a combination of a tuning range of 27.4nm in the C-band, a linear frequency modulation at a speed of 200kHz, a wavelength-switching time below 900ns, and an ultra-low intrinsic linewidth down to 33.1Hz. With the unification of wide tunability, frequency agility and ultra-low linewidth, this hybrid DECL holds promise for many applications in telecommunications, interconnects and light detection and ranging.

Hybrid dual-gain tunable integrated InP-Si3N4 external cavity laser

Hybrid integrated Si3N4 external cavity laser with high power and narrow linewidth

Hybrid Integrated Narrow-Linewidth Semiconductor Lasers

1.9 μm hybrid silicon/iii-v semiconductor laser

Narrow-linewidth, tunable external cavity dual-band diode lasers through InP/GaAs-Si3N4 hybrid integration

Hybrid integrated Si_3N_4 external cavity laser with high power and narrow linewidth

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Tunable V-Coupled-Cavity Semiconductor Laser Monolithically Integrated with Monitoring Photodiodes Using Deeply Etched Reflective Trenches

Complementary-Tuning-Enabled Hybrid III-V/Si3N4 Dual External Cavity Laser Combines Wide Tunability and Frequency Agility

Widely tunable 2 $μ$m hybrid laser using GaSb semiconductor optical amplifiers and Si3N4 photonics integrated reflector

Hybrid InP-Si3N4 Tunable External Cavity Laser Achieving an Ultra-low Intrinsic Linewidth below 10 Hz

High linear polarization, narrow linewidth hybrid semiconductor laser with an external birefringence waveguide Bragg grating

Wavelength Tunable Cavity Mirror for Silicon Micro-Ring-Based Hybrid Integrated Lasers

Silicon Nitride External Cavity Laser with Alignment Tolerant Multi-Mode RSOA-to-PIC Interface

Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

Monolithic Integration of Tunable V-coupled-cavity Laser and Mach-Zehnder Modulator on Generic InP Platform

Compact, Ultra-Tunable InGaSb/AlGaAsSb Si External Cavity Laser at the Mid-Infrared (MIR)

Tunable V-Cavity Laser Monolithically Integrated with Traveling Wave Mach-Zehnder Modulator

Tunable V-Cavity Semiconductor Laser And Modules

Hybrid InP-SiN microring-resonator based tunable laser with high output power and narrow linewidth for high capacity coherent systems

The Wavelength Tuning Performance of Narrow Linewidth Laser-Diode Coupled to an External High-Q Si3N4 Micro-Ring Resonator