Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

Compact, Ultra-Tunable InGaSb/AlGaAsSb Si External Cavity Laser at the Mid-Infrared (MIR)

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Wavelength Tunable Cavity Mirror for Silicon Micro-Ring-Based Hybrid Integrated Lasers

1.9 μm hybrid silicon/iii-v semiconductor laser

Mid-infrared Widely Tunable Single-Mode Interband Cascade Lasers Based on V-coupled Cavities.

Widely tunable 2 $μ$m hybrid laser using GaSb semiconductor optical amplifiers and Si3N4 photonics integrated reflector

Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

Hybrid integrated external cavity laser with a 172-nm tuning range

Single-mode Interband Cascade Laser Based on V-coupled Cavity with 210 Nm Wavelength Tuning Range Near 3 Μm.

Hybrid External Cavity Laser with a 160-Nm Tuning Range

GaAs/AlGaAs-Based 870-Nm-band Widely Tunable Edge-Emitting V-Cavity Laser

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Wide‐Wavelength Tunable Mid‐Infrared Lasing Based on Black Arsenic Phosphorus

Mid-infrared (MIR) Mach-Zehnder Silicon Modulator at 2μm Wavelength Based on Interleaved PN Junction

Quasi-Continuous Wavelength Tuning of Single-mode Interband Cascade Lasers Based on V-coupled Cavity

Compact, Hybrid III-V/Silicon Vernier Laser Diode Operating from 1955–1992 Nm

Compact, Hybrid III-V/Silicon Vernier Laser Diode Operating From 1955–1992 nm

A hybrid-integrated external cavity laser with ultra-wide wavelength tuning range and high side-mode suppression

Simple and Compact V-cavity Semiconductor Laser with 50×100 GHz Wavelength Tuning.

Tunable Quantum Dot Lasers Grown Directly on Silicon

Tunable Single-Mode Half-Wave Coupled Laser Using Two Back-to-Back Corner-Connected TIR Reflectors