Abstract:Recent advances in the development of ultra-low loss silicon nitride (Si3N4)-based photonic integrated circuits have allowed integrated lasers to achieve a coherence exceeding those of fiber lasers and enabled unprecedentedly fast (Megahertz bandwidth) tuning using monolithically integrated piezoelectrical actuators. While this marks the first time that fiber laser coherence is achieved using photonic integrated circuits, in conjunction with frequency agility that exceeds those of legacy bulk lasers, the approach is presently compounded by the high cost of manufacturing DFB, as required for self-injection locking, as well as the precise control over the laser current and temperature to sustain a low noise locked operation. Reflective semiconductor optical amplifiers (RSOA) provide a cost-effective alternative solution but have not yet achieved similar performance in coherence or frequency agility, as required for frequency modulated continuous wave (FMCW) LiDAR, laser locking in frequency metrology or wavelength modulation spectroscopy for gas sensing. Here, we overcome this challenge and demonstrate an RSOA-based and frequency agile integrated laser tuned with high speed, good linearity, high optical output power, and turn-key operability while maintaining a small footprint. This is achieved using a tunable extended distributed Bragg reflector (E-DBR) in an ultra-low loss 200 nm thin Si3N4 platform with monolithically integrated piezoelectric actuators. We co-integrate the DBR with a compact ultra-low loss spiral resonator to further reduce the intrinsic optical linewidth of the laser to the Hertz level -- on par with the noise of a fiber laser -- via self-injection locking.

Widely-tunable and narrow-linewidth hybrid-integrated diode laser at 637 nm

Hybrid Integrated Narrow-Linewidth Semiconductor Lasers

Sub-kHz Linewidth, Hybrid III-V/silicon Wavelength-Tunable Laser Diode Operating at the Application-Rich 1647-1690 Nm

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Hybrid integrated Si3N4 external cavity laser with high power and narrow linewidth

Tunable V-Coupled-Cavity Semiconductor Laser Monolithically Integrated with Monitoring Photodiodes Using Deeply Etched Reflective Trenches

Narrow-linewidth, tunable external cavity dual-band diode lasers through InP/GaAs-Si3N4 hybrid integration

A fully hybrid integrated erbium-based laser

Ring resonator enhanced mode-hop-free wavelength tuning of an integrated extended-cavity laser

Fiber-Integrated Reversibly Wavelength-Tunable Nanowire Laser Based on Nanocavity Mode Coupling.

Tunable V-Cavity Semiconductor Laser And Modules

Wavelength-Tunable Narrow-Linewidth Laser Diode Based on Self-Injection Locking with a High-Q Lithium Niobate Microring Resonator

Mid-infrared Widely Tunable Single-Mode Interband Cascade Lasers Based on V-coupled Cavities.

Integrated electro-optically tunable narrow-linewidth III-V laser

The Wavelength Tuning Performance of Narrow Linewidth Laser-Diode Coupled to an External High-Q Si3N4 Micro-Ring Resonator

Frequency agile photonic integrated external cavity laser

Integrated Mode-Hop-Free Tunable Lasers at 780 nm for Chip-Scale Classical and Quantum Photonic Applications

Widely tunable and narrow-linewidth chip-scale lasers from near-ultraviolet to near-infrared wavelengths

Near ultraviolet photonic integrated lasers based on silicon nitride

Hertz-linewidth and frequency-agile photonic integrated extended-DBR lasers