Abstract:An evanescently-coupled, hybrid InGaAsP-Si laser operating at 1.55 mu m is presented by selective area metal bonding (SAMB). The III-V laser, fabricated on a p-InP substrate with a semi-insulating InP: Fe buried heterostructure (BH), serves to provide optical gain. On the SOI wafer, a 3-mu m wide and 500-nm high Si waveguide is formed and the bonding metal (AuSn alloy) is selectively deposited in the regions 6 mu m away from the Si waveguide on each side. The InGaAsP gain structure is flip-chip bonded onto the patterned SOI wafer using SAMB method which separates laterally the optical coupling area and the metal bonding area to avoid strong light absorption by the bonding metal. The hybrid laser runs with a maximum single-sided output power of 9 mw at room temperature. The slope efficiency of the hybrid laser is about 0.04 W/A, 4 times that of the laser before bonding which indicates that the light confinement is improved after the bonding. The hybrid laser has achieved 10 degrees C contimuous wave (CW) lasing. A near-field image of the hybrid laser is studied. As the inject current increases, the light spot markedly shifts down to the Si waveguide and covers the Si waveguide region, which demonstrates that the light generated in the III-V active region is coupled into the Si waveguide. This method allows for different III-V devices to be bonded onto any desired places on a SOI substrate. The simplicity and flexibility of the fabrication process and high yield make the hybrid laser a promising light source.

Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding

1.9 μm hybrid silicon/iii-v semiconductor laser

A Selective-Area Metal Bonding InGaAsP–Si Laser

Hybrid InGaAsP-Si Evanescent Laser by Selective-Area Metal-Bonding Method

Hybrid integrated InGaAsP-Si laser using selective area metal bonding method for optical interconnection

Bonding Ingaasp/Ito/Si Hybrid Laser with Ito As Cathode and Light-Coupling Material

A Selective Area Metal Bonding Method for Si Photonics Light Sources

A Hybrid Single-Mode Laser Based on Slotted Silicon Waveguides

A selective area metal bonding method for electrically pumped silicon-based hybrid lasers

A Buried Ridge Stripe Structure InGaAsP-Si Hybrid Laser

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELs by Direct Wafer-Bonding

Hybrid Structure Laser Based on Semiconductor Nanowires and a Silica Microfiber Knot Cavity

IaAsP/InGaAsP quantum-well 1.3 μm vertical-cavity surface-emitting lasers

III–V/Si Hybrid Laser Array with DBR on Si Waveguide*

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Electrically-Pumped Continuous-Wave Quantum-Dot Distributed Feedback Laser Array on Silicon

Polarization Insensitive InGaAs/InGaAsP/InP Amplifiers Using Quantum Well Intermixing

A Silicon Co-Integrated Light Source Module

Electrically-pumped Compact Hybrid Silicon Microring Lasers for Optical Interconnects.

Semicoductor-metallic hybrid nano-disk laser