Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

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Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Electrically driven compact hybrid lithium niobate microring laser

1.9 μm hybrid silicon/iii-v semiconductor laser

Hybrid Integrated Narrow-Linewidth Semiconductor Lasers

Toward On-Chip Unidirectional and Single-Mode Polymer Microlaser

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An Optically-Pumped Silicon Evanescent Microring Resonator Laser

Compact hybrid laser based on semiconductor nanowires and a silica biconical fiber

A thulium-silicon hybrid microdisk laser

Compact and Low Power Consumption Hybrid Integrated Wavelength Tunable Laser Module Using Silicon Waveguide Resonators

Scalable single-microring hybrid III-V/Si lasers for emerging narrow-linewidth applications

Wavelength Tunable Cavity Mirror for Silicon Micro-Ring-Based Hybrid Integrated Lasers

4–λ hybrid InGaAsP-Si evanescent laser array with low power consumption for on-chip optical interconnects

C and L Bands Wavelength Tunable Laser with Silicon Photonic-wire Waveguide Micro-ring Resonators

Tunable Quantum Dot Lasers Grown Directly on Silicon

Hybrid vertical-cavity laser with lateral emission into a silicon waveguide

Hertz-linewidth Hybrid Integrated Laser Based on High-Q Si3N4 Microring Reflectors

Analysis of Compact Silicon Photonic Hybrid Ring External Cavity (SHREC) Wavelength-Tunable Laser Diodes Operating from 1881–1947 Nm

Novel integration technique for silicon/III-V hybrid laser

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