Abstract:Giant spin Hall effect (GSHE) has been observed in heavy metal materials such as Ta, Pt, and W, where spins are polarized in the surface plane and perpendicular to the charge current direction. Spins generated in these materials have successfully switched magnets with in-plane magnetic anisotropy (IMA) and perpendicular magnetic anisotropy (PMA) through spin orbit torque (SOT) mechanism. It is generally accepted that PMA magnets are preferred over IMA magnets in data storage applications owing to their large thermal stability even at ultra scaled dimensions. However, SOT switching of PMA magnets by conventional GSHE materials requires either a small external magnetic field, a local dipolar field, or introducing tilted anisotropy to break the symmetry with respect to the magnetization. To deterministically switch a PMA without any additional assistance, nonconventional GSHE materials that can generate spins with polarization perpendicular to the surfaces are needed. Several monolayer transition metal dichalcogenides (TMDs) have been predicted to generate such out of plane spins due to their 2D nature and unique band structures. Interestingly, opposite spins are locked to their respective sub-band in each K valley of the TMD valence band with substantially large energy splitting, which enables polarized spins to be accessible through electrical gating and spatially separated by electric field through the valley Hall effect (VHE). Therefore, spatial separation and accumulation of spins in these 2D TMDs are uniquely referred to as coupled valley and spin Hall effect. Here, we report an experiment of electrical generation of spin current with out of plane polarization in monolayer WSe2 and detection of spin signals through a nonlocal spin valve structure built on a lateral graphene spin diffusion channel that partially overlaps with WSe2.

Inversion Symmetry Breaking Induced Valley Hall Effect in Multilayer WSe2.

Large valley splitting and vacancy-induced valley polarization in two-dimensional WSeNH

Valley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe$_2$

Transport and Spatial Separation of Valley Coherence Via Few Layer WS2 Exciton-Polaritons

Tunable valley characteristics of WSe2 and WSe2/VSe2 heterostructure

Valley Polarization-Electric Dipole Interference and Nonlinear Chiral Selection Rules in Monolayer WSe$_2$

Robust Room Temperature Valley Hall Effect of Interlayer Excitons

A room-temperature gate-tunable bipolar valley Hall effect in molybdenum disulfide/tungsten diselenide heterostructures

Strain Tunable Berry Curvature Dipole, Orbital Magnetization and Nonlinear Hall Effect in WSe2 Monolayer

Electrically Tunable Valley Dynamics in Twisted WSe_{2}/WSe_{2} Bilayers

Spatial Variations of Valley Splitting in Monolayer Transition Metal Dichalcogenide

The Valley Hall Effect in MoS2 Transistors

Experimental observation of coupled valley and spin Hall effect in p-doped WSe2 devices

Strain Tunable Berry Curvature Dipole, Orbital Magnetization and Nonlinear Hall Effect in WSe 2 Monolayer

Magnetically-Sensitive Valley Polarization Reversal and Revival of Defect-Localized Excitons in WSe2-WS2

All Electrical Control and Temperature Dependence of the Spin and Valley Hall Effect in Monolayer WSe2 Transistors

Room temperature interlayer exciton valley polarization and valley Hall effect

Generation and Transport of Valley-Polarized Current in Transition-Metal Dichalcogenides

Enhanced valley polarization in WSe2/YIG heterostructures via interfacial magnetic exchange effect

Observation of Intervalley Quantum Interference in Epitaxial Monolayer Tungsten Diselenide.

Tunable Valley Polarization and Valley Orbital Magnetic Moment Hall Effect in Honeycomb Systems with Broken Inversion Symmetry