Abstract:Giant spin Hall effect (GSHE) has been observed in heavy metal materials such as Ta, Pt, and W, where spins are polarized in the surface plane and perpendicular to the charge current direction. Spins generated in these materials have successfully switched magnets with in-plane magnetic anisotropy (IMA) and perpendicular magnetic anisotropy (PMA) through spin orbit torque (SOT) mechanism. It is generally accepted that PMA magnets are preferred over IMA magnets in data storage applications owing to their large thermal stability even at ultra scaled dimensions. However, SOT switching of PMA magnets by conventional GSHE materials requires either a small external magnetic field, a local dipolar field, or introducing tilted anisotropy to break the symmetry with respect to the magnetization. To deterministically switch a PMA without any additional assistance, nonconventional GSHE materials that can generate spins with polarization perpendicular to the surfaces are needed. Several monolayer transition metal dichalcogenides (TMDs) have been predicted to generate such out of plane spins due to their 2D nature and unique band structures. Interestingly, opposite spins are locked to their respective sub-band in each K valley of the TMD valence band with substantially large energy splitting, which enables polarized spins to be accessible through electrical gating and spatially separated by electric field through the valley Hall effect (VHE). Therefore, spatial separation and accumulation of spins in these 2D TMDs are uniquely referred to as coupled valley and spin Hall effect. Here, we report an experiment of electrical generation of spin current with out of plane polarization in monolayer WSe2 and detection of spin signals through a nonlocal spin valve structure built on a lateral graphene spin diffusion channel that partially overlaps with WSe2.

Generation and Transport of Valley-Polarized Current in Transition-Metal Dichalcogenides

Transport and Spatial Separation of Valley Coherence Via Few Layer WS2 Exciton-Polaritons

Generation and Electric Control of Spin-Coupled Valley Current in WSe2

Generation and Electric Control of Spin–valley-Coupled Circular Photogalvanic Current in WSe2

Generation and evolution of spin-, valley- and layer-polarized excited carriers in inversion-symmetric WSe2

Spin- and Valley-Resolved Tunneling Magnetoresistance in a Ferromagnetic Transition Metal Dichalcogenide Planar Heterojunction Modulated by Polarized Light

Ultrafast Investigation of Room Temperature Valley Polarization in “optical Bilayer” WS 2

Optically Controlled Valley Filter and Transistor Based on Transition-Metal Dichalcogenide Planar Heterojunctions

Spatial Variations of Valley Splitting in Monolayer Transition Metal Dichalcogenide

Valley-spin polarized Landau levels in a monolayer semiconductor

Ultrafast Drift Current Terahertz Emission Amplification in the Monolayer WSe2/Si Heterostructure

Observation of Strong Valley Magnetic Response in Monolayer Transition Metal Dichalcogenide Alloys of Mo0.5W0.5Se2 and Mo0.5W0.5Se2/WS2 Heterostructures

Magnetically-Sensitive Valley Polarization Reversal and Revival of Defect-Localized Excitons in WSe2-WS2

Electrically switchable valley polarization, spin/valley filter, and valve effects in transition-metal dichalcogenide monolayers interfaced with two-dimensional ferromagnetic semiconductors

Spin-valley Coupled Valleytronics in Two-Dimensional Transitional Metal Dichalcogenides

Electrical generation and control of the valley carriers in a monolayer transition metal dichalcogenide

Enhanced valley polarization in WSe2/YIG heterostructures via interfacial magnetic exchange effect

Experimental observation of coupled valley and spin Hall effect in p-doped WSe2 devices

Observation of Valley Zeeman and Quantum Hall Effects at Q Valley of Few-Layer Transition Metal Disulfides

Manipulating Spin-polarized Photocurrent in 2D Transition Metal Dichalcogenides

Interface Engineering Modulated Valley Polarization in MoS2/hBN Heterostructure