Abstract:The emerging field of valleytronics has boosted intensive interests in investigating and controlling valley polarized light emission of monolayer transition metal dichalcogenides (1L TMDs). However, so far, the effective control of valley polarization degree in monolayer TMDs semiconductors is mostly achieved at liquid helium cryogenic temperature (4.2 K), with the requirements of high magnetic field and on-resonance laser, which are of high cost and unwelcome for applications. To overcome this obstacle, it is depicted that by electrostatic and optical doping, even at temperatures far above liquid helium cryogenic temperature (80 K) and under off-resonance laser excitation, a competitive valley polarization degree of monolayer WS2 can be achieved (more than threefold enhancement). The enhanced polarization is understood by a general doping dependent valley relaxation mechanism, which agrees well with the unified theory of carrier screening effects on intervalley scattering process. These results demonstrate that the tunability corresponds to an effective magnet field of approximate to 10 T at 4.2 K. This work not only serves as a reference to future valleytronic studies based on monolayer TMDs with various external or native carrier densities, but also provides an alternative approach toward enhanced polarization degree, which denotes an essential step toward practical valleytronic applications.

Electrical generation and control of the valley carriers in a monolayer transition metal dichalcogenide

Generation and Electric Control of Spin-Coupled Valley Current in WSe2

Generation and Electric Control of Spin–valley-Coupled Circular Photogalvanic Current in WSe2

Electrical Valley Excitation By Spin Injection In Monolayer Tmdc

Valley manipulation in monolayer transition metal dichalcogenides and their hybrid systems: status and challenges

Electrically switchable valley polarization, spin/valley filter, and valve effects in transition-metal dichalcogenide monolayers interfaced with two-dimensional ferromagnetic semiconductors

Engineering Valley Polarization of Monolayer WS2: A Physical Doping Approach

Generation and Transport of Valley-Polarized Current in Transition-Metal Dichalcogenides

Non-Volatile Control of Valley Polarized Emission in 2D WSe2-AlScN Heterostructures

Gate-field control of valley polarization in valleytronics

Spin-valley Coupled Valleytronics in Two-Dimensional Transitional Metal Dichalcogenides

Electrical control of spin and valley in spin-orbit coupled graphene multilayers

Spin-valley switch and conductance oscillations in antiferromagnetic transition metal dichalcogenides

Magnetic Control of the Valley Degree of Freedom of Massive Dirac Fermions with Application to Transition Metal Dichalcogenides

Nonvolatile Control of Valley Polarized Emission in 2D WSe 2 -AlScN Heterostructures

Valley-Dependent Spin Transport in Monolayer Transition-Metal Dichalcogenides

Electrical Switching of Valley Polarization in Monolayer Semiconductors

Valley manipulation by external fields in two-dimensional materials and their hybrid systems

Electrical Control of Circular Photogalvanic Spin-Valley Photocurrent in a Monolayer Semiconductor

Manipulating Spin-polarized Photocurrent in 2D Transition Metal Dichalcogenides

Spontaneous Valley Polarization and Electrical Control of Valley Physics in Single-Layer TcIrGe2S6