Abstract:Abstract Valley, the energy extrema in the electronic band structure at momentum space, is regarded as a new degree of freedom of electrons, in addition to charge and spin. The studies focused on valley degree of freedom now form an emerging field of condensed-matter physics, i.e., valleytronics, whose development is exactly following that of spintronics, which focuses on the spin degree of freedom. Here, in analogy to half-metals in spintronics where one spin channel is conducting, whereas the other is insulating, we propose the concept of half-valley metal, in which conduction electrons are intrinsically 100% valley polarized, as well as 100% spin polarized even when spin–orbit interactions are considered. Combining first-principle calculations with a two-band k · p model, the physical mechanism to form the half-valley metal is illuminated. Taking the ferrovalley H-FeCl 2 monolayer with strong exchange interaction as an example, we find that the strong electron correlation effect can induce the ferrovalley to half-valley-metal transition. Due to the valley-dependent optical selection rules, such a system could be transparent to, e.g., left-circularly polarized light, yet the right-circularly polarized light will be reflected, which can in turn be used as a crucial method to detect the half-valley-metal state. Interestingly, with the increase of the correlation effect, the system becomes insulating again with all valleys following the same optical selection rule. We confirm that in this specific case, the valence bands, which consist of single spin, possess nonzero Chern number and consequently an intrinsic quantum anomalous valley Hall effect emerges. Our findings open an appealing route toward functional 2D materials design of valleytronics.

Magnetic Control of the Valley Degree of Freedom of Massive Dirac Fermions with Application to Transition Metal Dichalcogenides

Ferrovalleytricity in a two-dimensional antiferromagnetic lattice

Spin-valley switch and conductance oscillations in antiferromagnetic transition metal dichalcogenides

Multiple Valley Modulations in Noncollinear Antiferromagnets

Valleytronics in transition metal dichalcogenides materials

Valley-selective confinement of excitons in transition metal dichalcogenides with inhomogeneous magnetic fields

Electrically switchable valley polarization, spin/valley filter, and valve effects in transition-metal dichalcogenide monolayers interfaced with two-dimensional ferromagnetic semiconductors

Valley manipulation in monolayer transition metal dichalcogenides and their hybrid systems: status and challenges

Tunable abundant valley Hall effect and chiral spin-valley locking in Janus monolayer VCGeN4

Electrical generation and control of the valley carriers in a monolayer transition metal dichalcogenide

Spin-valley Coupled Valleytronics in Two-Dimensional Transitional Metal Dichalcogenides

Coupling the valley degree of freedom to antiferromagnetic order

Valley manipulation by slidingly tuning the magnetic proximity effect in Heterostructures

Quantum Anomalous Valley Hall Effect in Ferromagnetic MXenes with Asymmetric Functionalization

Valley-Splitting and Valley-Dependent Inter-Landau-Level Optical Transitions in Monolayer Mos2 Quantum Hall Systems

Tunable Orbital Thermoelectric Transport with Spin-Valley Coupling in Ferromagnetic Transition Metal Dichalcogenides

Atypical breathing driven two-dimensional valley multiferroicity

Concepts of the half-valley-metal and quantum anomalous valley Hall effect

Valley modulation and single-edge transport of magnons in breathing kagome ferromagnets

Valley-dependent Properties in Two-Dimensional Cr2COF MXene Predicted from First Principles

Anomalous Valley Hall Effect in A -Type Antiferromagnetic Van Der Waals Heterostructures