Abstract:Abstract Valleytronics uses valleys, a novel quantum degree of freedom, to encode information. It combines other degrees of freedom, such as charge and spin, to produce a more comprehensive, stable, and efficient information processing system. Valleytronics has become an intriguing field in condensed matter physics due to the emergence of new two-dimensional materials in recent years. However, in nonmagnetic valleytronic materials, the valley polarization is transient and the depolarization occurs once the external excitation is withdrawn. Introduction of magnetic field is an effective approach to realizing the spontaneous valley polarization by breaking the time-reversal symmetry. In hexagonal magnetic valleytronic materials, the inequivalent valleys at the K and – K ( K ′) Dirac cones have asymmetric energy gaps and Berry curvatures. The time-reversal symmetry in nonmagnetic materials can be broken by applying an external magnetic field, adding a magnetic substrate or doping magnetic atoms. Recent theoretical studies have demonstrated that valleytronic materials with intrinsic ferromagnetism, now termed as ferrovalley materials, exhibit spontaneous valley polarization without the need for external fields to maintain the polarization. The coupling of the valley and spin degrees of freedom enables stable and unequal distribution of electrons in the two valleys and thus facilitating nonvolatile information storage. Hence, ferrovalley materials are promising materials for valleytronic devices. In this review, we first briefly overview valleytronics and its related properties, the ways to realize valley polarization in nonmagnetic valleytronic materials. Then we focus on the recent developments in two-dimensional ferrovalley materials, which can be classified according to their molecular formula and crystal structure: MX 2 ; M(XY) 2 , M(XY 2 ) and M(XYZ) 2 ; M 2 X 3 , M 3 X 8 and MNX 6 ; MNX 2 Y 2 , M 2 X 2 Y 6 and MNX 2 Y 6 ; and the Janus structure ferrovalley materials. In the inequivalent valleys, the Berry curvatures have opposite signs with unequal absolute values, leading to anomalous valley Hall effect. When the valley polarization is large, the ferrovalleys can be selectively excited even with unpolarized light. Intrinsic valley polarization in two-dimensional ferrovalley materials is of great importance. It opens a new avenue for information-related applications and hence is under rapid development.

Valley modulation and single-edge transport of magnons in breathing kagome ferromagnets

Valley Modulation and Single-Edge Transport of Magnons in Staggered Kagome Ferromagnets

Topological Valley Magnons and Tunable Thermal Rectification in Staggered Kagome Ferromagnets

Magnon Valley Hall Effect and Tunable Chiral Edge Transport in AB-stacked Kagome Lattices

Multiple Valley Modulations in Noncollinear Antiferromagnets

Pure Magnon Valley Currents in a Patterned Ferromagnetic Thin Film

Coupling the valley degree of freedom to antiferromagnetic order

Valley manipulation by slidingly tuning the magnetic proximity effect in Heterostructures

Valley-polarized domain wall magnons in 2D ferromagnetic bilayers

Valley and spin pump by scattering at non-magnetic disorders

Valleytronics in two-dimensional magnetic materials

Atypical breathing driven two-dimensional valley multiferroicity

Magnetically and electrically controllable valley splittings in MXene Co2CF2 monolayers

Prediction of coexistence of anomalous valley Hall and quantum anomalous Hall effects in breathing kagome-honeycomb lattices

Magnetically and electrically controllable valley splittings in MXene monolayers

Magnetic Control of the Valley Degree of Freedom of Massive Dirac Fermions with Application to Transition Metal Dichalcogenides

Valley-contrasting Physics in Graphene: Magnetic Moment and Topological Transport.

Concepts of ferrovalley material and anomalous valley Hall effect

Valley Contrasting Magnetoluminescence in Monolayer MoS$_{2}$ Quantum Hall Systems

Tunable abundant valley Hall effect and chiral spin-valley locking in Janus monolayer VCGeN4

Tunable Orbital Thermoelectric Transport with Spin-Valley Coupling in Ferromagnetic Transition Metal Dichalcogenides