Abstract:Two-dimensional (2D) transition metal dichalcogenides endow individually addressable valleys in momentum space at the K and K' points in the first Brillouin zone due to the breaking of inversion symmetry and the effect of spin-orbit coupling. However, the application of 2H-VS2 monolayer in valleytronics is limited due to the valence band maximum (VBM) located at the Γ point. Here, by involving the 2D ferroelectric (FE) CuInP2Se6 (CIPSe), the ferrovalley polarization, electronic structure, and magnetic properties of 2D 2H-VS2/CIPSe heterostructures with different stacking patterns and FE polarizations have been investigated by using first-principles calculations. It is found that, for the energetically favorable AB-stacking pattern, the valley polarization is preserved when the FE polarization of CIPSe is upwards (CIPSe↑) or downwards (CIPSe↓) with the splitting energies slightly larger or smaller compared with that of the pure 2H-VS2. It is intriguing that, for the FE CIPSe↑ case, the VBM is expected to pass through the Fermi energy level, which can be eventually achieved by applying biaxial strain and thus the valleytronic nature is turned off; however, for the CIPSe↓ situation, the heterostructure basically remains semiconducting even under biaxial strains. Therefore, with the influence of proper strains, the FE polar reversal of CIPSe can be used as a switchable on/off to regulate the valley polarization in VS2. These results not only demonstrate that 2H-VS2/CIPSe heterostructures are promising potential candidates in valleytronics, but also shed some light on developing practical applications of valleytronic technology.

Nonvolatile Control of Valley Polarized Emission in 2D WSe 2 -AlScN Heterostructures

Non-Volatile Control of Valley Polarized Emission in 2D WSe2-AlScN Heterostructures

Electrical Switching of Valley Polarization in Monolayer Semiconductors

Engineering Valley Polarization of Monolayer WS2: A Physical Doping Approach

Ultrafast Investigation of Room Temperature Valley Polarization in “optical Bilayer” WS 2

Generation and Electric Control of Spin-Coupled Valley Current in WSe2

Controllable Valley Polarization and Strain Modulation in 2D 2H-VS2/CuInP2Se6 Heterostructures

Generation and Electric Control of Spin–valley-Coupled Circular Photogalvanic Current in WSe2

Electrically switchable valley polarization, spin/valley filter, and valve effects in transition-metal dichalcogenide monolayers interfaced with two-dimensional ferromagnetic semiconductors

Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics

Valley-selective Circular Dichroism of Monolayer Molybdenum Disulphide

Enhanced valley polarization in WSe2/YIG heterostructures via interfacial magnetic exchange effect

Electrical generation and control of the valley carriers in a monolayer transition metal dichalcogenide

Abundant Valley-Polarized States in Two-Dimensional Ferromagnetic Van Der Waals Heterostructures

Selective control of valley polarization in monolayer transition metal dichalcogenides among multiexcitonic states

Electrical Control of Valley Polarized Charged Exciton Species in Monolayer WS 2

Ferroelectric tuning of the valley polarized metal-semiconductor transition in Mn2P2S3Se3/Sc2CO2 van der Waals heterostructures and application to nonlinear Hall effect devices

All Electrical Control and Temperature Dependence of the Spin and Valley Hall Effect in Monolayer WSe2 Transistors

Valley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe$_2$

Tunable valley characteristics of WSe2 and WSe2/VSe2 heterostructure