Abstract:Two dimensional (2D) materials provide a unique platform for spintronics and valleytronics due to the ability to combine vastly different functionalities into one vertically-stacked heterostructure, where the strengths of each of the constituent materials can compensate for the weaknesses of the others. Graphene has been demonstrated to be an exceptional material for spin transport at room temperature, however it lacks a coupling of the spin and optical degrees of freedom. In contrast, spin/valley polarization can be efficiently generated in monolayer transition metal dichalcogenides (TMD) such as MoS2 via absorption of circularly-polarized photons, but lateral spin or valley transport has not been realized at room temperature. In this letter, we fabricate monolayer MoS2/few-layer graphene hybrid spin valves and demonstrate, for the first time, the opto-valleytronic spin injection across a TMD/graphene interface. We observe that the magnitude and direction of spin polarization is controlled by both helicity and photon energy. In addition, Hanle spin precession measurements confirm optical spin injection, spin transport, and electrical detection up to room temperature. Finally, analysis by a one-dimensional drift-diffusion model quantifies the optically injected spin current and the spin transport parameters. Our results demonstrate a 2D spintronic/valleytronic system that achieves optical spin injection and lateral spin transport at room temperature in a single device, which paves the way for multifunctional 2D spintronic devices for memory and logic applications.

Valley-Dependent Spin Transport in Monolayer Transition-Metal Dichalcogenides

Spin-valley Coupled Valleytronics in Two-Dimensional Transitional Metal Dichalcogenides

Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides

Spin-valley switch and conductance oscillations in antiferromagnetic transition metal dichalcogenides

Spin-Valley Locking Effect in Defect States of Monolayer MoS2

Spin-valley Coupling in a Two-Dimensional VSi2N4 Monolayer

Tunable Orbital Thermoelectric Transport with Spin-Valley Coupling in Ferromagnetic Transition Metal Dichalcogenides

Electrical generation and control of the valley carriers in a monolayer transition metal dichalcogenide

Spin-orbit coupling induced valley Hall effects in transition-metal dichalcogenides

Promising valleytronic materials with strong spin-valley coupling in two-dimensional MN 2 X 2 (M = Mo, W; X = F, H)

Generation and Transport of Valley-Polarized Current in Transition-Metal Dichalcogenides

Valley-dependent transport through graphene quantum dots due to proximity-induced, staggered spin-orbit couplings

Valley manipulation in monolayer transition metal dichalcogenides and their hybrid systems: status and challenges

Multivalley Superconductivity in Monolayer Transition Metal Dichalcogenides

Valley-selective confinement of excitons in transition metal dichalcogenides with inhomogeneous magnetic fields

Valley-spin polarization at zero magnetic field induced by strong hole-hole interactions in monolayer WSe$_2$

Spin and valley dynamics of excitons in transition metal dichalcogenides monolayers

Electrically switchable valley polarization, spin/valley filter, and valve effects in transition-metal dichalcogenide monolayers interfaced with two-dimensional ferromagnetic semiconductors

Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves

Valleytronics in transition metal dichalcogenides materials

Review of Ultrafast Spectroscopy Studies of Valley Carrier Dynamics in Two-Dimensional Semiconducting Transition Metal Dichalcogenides