Abstract:Valleytronics employs different electronic momenta to store, transfer, and process information potentially with less energy cost, but faces challenges of short valley lifetime and low efficiency in optical manipulation. This review summarizes recently proposed materials for valleytronics beyond monolayer transition metal dichalcogenides, and highlights challenges in finding new materials and valley operation principles toward information applications. Valleytronics, harnessing the valley degree of freedom in the momentum space, is a potential energy‐efficient approach for information encoding, manipulation, and storage. Valley degree of freedom exists in a few conventional semiconductors, but recently the emerging 2D materials, such as monolayer transition‐metal dichalcogenides (TMDs), are considered more ideal for valleytronics, due to the additional protection from spin‐valley locking enabled by their inversion symmetry breaking and large spin‐orbit coupling. However, current limitations in the valley lifetime, operation temperature, and light‐valley conversion efficiency in existing materials encumber the practical applications of valleytronics. In this article, the valley depolarization mechanisms and recent progress of novel materials are systematically reviewed for valleytronics beyond TMDs. Valley physics is first reviewed and the factors determining the valley lifetime, including the intrinsic electron‐electron and electron‐lattice interactions, as well as extrinsic defect effects. Then, experimentally demonstrated and theoretically proposed valley materials are introduced which potentially improve valley properties through the changes of spin‐orbit coupling, electronic interactions, time‐reversal symmetry, structures, and defects. Finally, the challenges and perspectives are summarized to realize valleytronic devices in the future.

Review of Ultrafast Spectroscopy Studies of Valley Carrier Dynamics in Two-Dimensional Semiconducting Transition Metal Dichalcogenides

An optical spectroscopic study on two-dimensional group-VI transition metal dichalcogenides.

Valleytronics in transition metal dichalcogenides materials

Plasmonic Modulation of Valleytronic Emission in Two‐Dimensional Transition Metal Dichalcogenides

Valleytronic Properties and Devices Based on Two-Dimensional Atomic Layer Materials

Spin-valley Coupled Valleytronics in Two-Dimensional Transitional Metal Dichalcogenides

Valley manipulation in monolayer transition metal dichalcogenides and their hybrid systems: status and challenges

Ultrafast Investigation of Room Temperature Valley Polarization in “optical Bilayer” WS 2

Valleytronics: Fundamental Challenges and Materials Beyond Transition Metal Chalcogenides

Valleytronics Meets Straintronics: Valley Fine Structure Engineering of 2D Transition Metal Dichalcogenides

Interlayer exciton formation, relaxation, and transport in TMD van der Waals heterostructures

Ultrafast Interlayer Charge Transfer Outcompeting Intralayer Valley Relaxation in Few-Layer 2D Heterostructures

Spin and valley dynamics of excitons in transition metal dichalcogenides monolayers

Opto-valleytronic imaging of atomically thin semiconductors

Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides

Excitonic devices with van der Waals heterostructures: valleytronics meets twistronics

Direct Imaging of Valley-Polarized Excitons in 2D Semiconductors

Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

Valley-Dependent Spin Transport in Monolayer Transition-Metal Dichalcogenides

The Study of Spin-Valley Coupling in Atomically Thin Group Vi Transition Metal Dichalcogenides

Recent Progress on Valley Polarization and Valley-Polarized Topological States in Two-Dimensional Materials