Abstract:Valleytronics employs different electronic momenta to store, transfer, and process information potentially with less energy cost, but faces challenges of short valley lifetime and low efficiency in optical manipulation. This review summarizes recently proposed materials for valleytronics beyond monolayer transition metal dichalcogenides, and highlights challenges in finding new materials and valley operation principles toward information applications. Valleytronics, harnessing the valley degree of freedom in the momentum space, is a potential energy‐efficient approach for information encoding, manipulation, and storage. Valley degree of freedom exists in a few conventional semiconductors, but recently the emerging 2D materials, such as monolayer transition‐metal dichalcogenides (TMDs), are considered more ideal for valleytronics, due to the additional protection from spin‐valley locking enabled by their inversion symmetry breaking and large spin‐orbit coupling. However, current limitations in the valley lifetime, operation temperature, and light‐valley conversion efficiency in existing materials encumber the practical applications of valleytronics. In this article, the valley depolarization mechanisms and recent progress of novel materials are systematically reviewed for valleytronics beyond TMDs. Valley physics is first reviewed and the factors determining the valley lifetime, including the intrinsic electron‐electron and electron‐lattice interactions, as well as extrinsic defect effects. Then, experimentally demonstrated and theoretically proposed valley materials are introduced which potentially improve valley properties through the changes of spin‐orbit coupling, electronic interactions, time‐reversal symmetry, structures, and defects. Finally, the challenges and perspectives are summarized to realize valleytronic devices in the future.

Valleytronics Meets Straintronics: Valley Fine Structure Engineering of 2D Transition Metal Dichalcogenides

Tuning the physical properties of ultrathin transition-metal dichalcogenides via strain engineering

Valleytronics in transition metal dichalcogenides materials

Valley manipulation in monolayer transition metal dichalcogenides and their hybrid systems: status and challenges

Valleytronics: Fundamental Challenges and Materials Beyond Transition Metal Chalcogenides

Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications

Valleytronic Properties and Devices Based on Two-Dimensional Atomic Layer Materials

Valley manipulation by external fields in two-dimensional materials and their hybrid systems

Recent Progress in Strain Engineering on Van der Waals 2D Materials: Tunable Electrical, Electrochemical, Magnetic and Optical Properties

Enhancing Layer-Engineered Interlayer Exciton Emission and Valley Polarization in van der Waals Heterostructures via Strain

Enhanced Valley Polarization at Valence/conduction Band in Transition-Metal-doped WTe2 under Strain Force

Manipulating 2D Materials through Strain Engineering

Strain engineering of two‐dimensional materials: Methods, properties, and applications

Strain-induced optoelectronic tunability of fiber grown 2D transition metal dichalcogenides

Valleytronics in two-dimensional materials with line defect

Excitonic devices with van der Waals heterostructures: valleytronics meets twistronics

Strain-engineering in two-dimensional transition metal dichalcogenide alloys

Recent Progress on Valley Polarization and Valley-Polarized Topological States in Two-Dimensional Materials

Tuning Surface Dirac Valleys by Strain in Topological Crystalline Insulators

Review of Ultrafast Spectroscopy Studies of Valley Carrier Dynamics in Two-Dimensional Semiconducting Transition Metal Dichalcogenides

Plasmonic Modulation of Valleytronic Emission in Two‐Dimensional Transition Metal Dichalcogenides